Abstract: Provided is an encoding apparatus for integrally encoding and decoding a speech signal and a audio signal, and may include: an input signal analyzer to analyze a characteristic of an input signal; a stereo encoder to down mix the input signal to a mono signal when the input signal is a stereo signal, and to extract stereo sound image information; a frequency band expander to expand a frequency band of the input signal; a sampling rate converter to convert a sampling rate; a speech signal encoder to encode the input signal using a speech encoding module when the input signal is a speech characteristics signal; a audio signal encoder to encode the input signal using a audio encoding module when the input signal is a audio characteristic signal; and a bitstream generator to generate a bitstream.

Abstract: An encoding apparatus and a decoding apparatus in a transform between a Modified Discrete Cosine Transform (MDCT)-based coder and a different coder are provided. The encoding apparatus may encode additional information to restore an input signal encoded according to the MIDCT-based coding scheme, when switching occurs between the MDCT-based coder and the different coder. Accordingly, an unnecessary bitstream may be prevented from being generated, and minimum additional information may be encoded.

Abstract: A resin composition includes a polyimide, an ultraviolet (UV) absorber represented by the following Chemical Formula 1 and a remaining N-methyl-2-pyrrolidone, and wherein, in Chemical Formula 1, R1 and R2 are each selected from a hydrogen group, a halogen group, an aliphatic substituent, and an aromatic group.

Abstract: Provided is an encoding apparatus for integrally encoding and decoding a speech signal and a audio signal, and may include: an input signal analyzer to analyze a characteristic of an input signal; a stereo encoder to down mix the input signal to a mono signal when the input signal is a stereo signal, and to extract stereo sound image information; a frequency band expander to expand a frequency band of the input signal; a sampling rate converter to convert a sampling rate; a speech signal encoder to encode the input signal using a speech encoding module when the input signal is a speech characteristics signal; a audio signal encoder to encode the input signal using a audio encoding module when the input signal is a audio characteristic signal; and a bitstream generator to generate a bitstream.

Abstract: A semiconductor light emitting device includes a light emitting structure and first and second electrodes. The light emitting structure includes first and second conductivity type semiconductor layers and an active layer interposed therebetween. The first and second electrodes are electrically connected to the first and second conductivity type semiconductor layers. The second electrode includes a current blocking layer, a reflective part disposed on the current blocking layer, a transparent electrode layer disposed on the second conductivity type semiconductor layer, a pad electrode part disposed within a region of the current blocking layer, and at least one finger electrode part disposed at least in part on the transparent electrode layer. The transparent electrode layer can be spaced apart from the reflective part, and have an opening surrounding the reflective part. In some examples, the transparent electrode layer can further be spaced apart from the current blocking layer.

Abstract: A light emitting device package includes: a package board including a first electrode structure and a second electrode structure; and a light emitting device mounted on the package board and configured to emit light, the light emitting device including: light emitting structures provided on a growth substrate, electrically connected in series, and including an input terminal and an output terminal; a first solder pad and a second solder pad electrically connected to the input terminal and the output terminal, respectively, and in contact with the first and second electrode structures; and dummy solder pads provided on the light emitting structures and electrically insulated from the light emitting structures.

Abstract: A method of manufacturing a semiconductor light emitting device includes stacking a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer on a substrate; forming a first electrode and a second electrode on the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, respectively; forming an insulating layer covering the first and second electrodes and having first and second openings partially exposing surfaces of the first and second electrodes, respectively; and performing a plasma treatment on a surface of the insulating layer and the partially exposed surfaces of the first and second electrodes to form an unevenness portion on the surface of the insulating layer and form an oxygen-depleted layer on the partially exposed surfaces of the first and second electrodes.

Abstract: Semiconductor light-emitting devices, and semiconductor light-emitting packages, include at least one light-emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer sequentially stacked on a substrate, the at least one light-emitting structure having a first region and a second region delimiting the first region. The light-emitting device includes a groove in the second region, and the groove is adjacent to an edge of the substrate and extends parallel to the edge of the substrate.

Abstract: A semiconductor light emitting device includes a light emitting structure and first and second electrodes. The light emitting structure includes first and second conductivity type semiconductor layers and an active layer interposed therebetween. The first and second electrodes are electrically connected to the first and second conductivity type semiconductor layers. The second electrode includes a current blocking layer, a reflective part disposed on the current blocking layer, a transparent electrode layer disposed on the second conductivity type semiconductor layer, a pad electrode part disposed within a region of the current blocking layer, and at least one finger electrode part disposed at least in part on the transparent electrode layer. The transparent electrode layer can be spaced apart from the reflective part, and have an opening surrounding the reflective part. In some examples, the transparent electrode layer can further be spaced apart from the current blocking layer.