Abstract: Susceptor assemblies having a susceptor base with a plurality of pockets formed in a surface thereof are described. Each of the pockets has a pocket edge angle in the range of 30 to 75° and a pocket edge radius in the range of 0.40±0.05 mm to 1.20 mm±0.05 mm. The pockets have a raised central region and an outer region that is deeper than the raised central region, relative to the surface of the surface of the susceptor base.

Abstract: The present disclosure relates to an organic electroluminescent device. The organic electroluminescent device of the present disclosure shows high luminous efficiency and good lifespan by comprising a specific combination of the plural kinds of host compounds and a specific hole transport compound.

Abstract: Provided are a negative electrode active material including a three-dimensional composite. The three-dimensional composite includes secondary particles containing a silicon carbide-based (SiCx, 0<x?1) nanosheet having a bent portion and amorphous carbon. Also provided are a method of producing the same, and a negative electrode and a lithium secondary battery including the negative electrode active material.

Abstract: The present disclosure relates to an organic electroluminescent device. The organic electroluminescent device of the present disclosure shows high luminous efficiency and good lifespan by comprising a specific combination of the plural kinds of host compounds and a specific hole transport compound.

Abstract: The present invention relates to a method of manufacturing polycrystalline silicon ingot using a crucible in which an oxygen exhaust passage is formed by single crystal or polycrystalline rods, the method including the steps of: manufacturing the single crystal or polycrystalline silicon rods each having the shape of a quadrilateral pillar; putting the single crystal or polycrystalline quadrilateral pillar-shaped silicon rods into the crucible in such a manner as to be arranged close to one another along the inner peripheral surface of the crucible to thus form a space portion inside the single crystal or polycrystalline silicon rods, into which silicon chunks are put, and the oxygen exhaust passages between the inner peripheral surface of the crucible and the respective surfaces of the single crystal or polycrystalline silicon rods oriented toward the inner peripheral surface of the crucible; putting the silicon chunks into the space portion of the crucible; and melting and crystallizing the silicon chunks.

Abstract: Apparatus and method for removing material from the susceptor of a batch processing chamber are described. The apparatus comprises a polishing tool including a rotatable platen positioned above the susceptor. A method comprises contacting material deposited on the susceptor with the rotatable platen to remove the material from the susceptor.

Abstract: Apparatus and method for removing material from the susceptor of a batch processing chamber are described. The apparatus comprises a polishing tool including a rotatable platen positioned above the susceptor. A method comprises contacting material deposited on the susceptor with the rotatable platen to remove the material from the susceptor.

Abstract: Apparatus and method for removing material from the susceptor of a batch processing chamber are described. The apparatus comprises a polishing tool including a rotatable platen positioned above the susceptor. A method comprises contacting material deposited on the susceptor with the rotatable platen to remove the material from the susceptor.