Patents by Inventor Tae-Kyeong Ko

Tae-Kyeong Ko has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20170140798
    Abstract: In a memory module including a memory device and a filter, the memory device operates with a clock of a reference frequency. The filter receives a multiplexed signal from a host and filters a signal of a frequency band from the multiplexed signal. The frequency band includes the reference frequency and the signal of the frequency band is provided to the memory device.
    Type: Application
    Filed: October 20, 2016
    Publication date: May 18, 2017
    Inventors: JONGMIN PARK, TAE-KYEONG KO, DO-HAN KIM, SUNGUP MOON, KYOYEON WON
  • Patent number: 9037783
    Abstract: A non-volatile memory device having respective parallel queues is disclosed. The non-volatile memory device includes a plurality of concurrently addressable units. The non-volatile memory device has respective queues for the concurrently addressable units, and transfers a second command to respective queues for the remaining concurrently addressable units while a first command is executed in a part of the concurrently addressable units, and executes a second command in the remaining concurrently addressable units. Accordingly, non-volatile memory device may concurrently access the concurrently addressable units in parallel, and may have high speed.
    Type: Grant
    Filed: December 13, 2012
    Date of Patent: May 19, 2015
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Seung-Wan Koh, Tae-Kyeong Ko
  • Publication number: 20130268721
    Abstract: A non-volatile memory device having respective parallel queues is disclosed. The non-volatile memory device includes a plurality of concurrently addressable units. The non-volatile memory device has respective queues for the concurrently addressable units, and transfers a second command to respective queues for the remaining concurrently addressable units while a first command is executed in a part of the concurrently addressable units, and executes a second command in the remaining concurrently addressable units. Accordingly, non-volatile memory device may concurrently access the concurrently addressable units in parallel, and may have high speed.
    Type: Application
    Filed: December 13, 2012
    Publication date: October 10, 2013
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Seung-Wan KOH, Tae-Kyeong KO
  • Publication number: 20120173809
    Abstract: The present disclosure relates to a memory device and a system including the memory device. The memory device may include a non-volatile memory, a dynamic random access memory (DRAM) cache, a DRAM, and a control circuit. The control circuit may perform interfacing between the DRAM and a host, between the DRAM cache and the host, and between the non-volatile memory and the DRAM cache. The memory device may have a high operating speed and may be incorporated in a simple package, such as a multi-chip package.
    Type: Application
    Filed: January 5, 2012
    Publication date: July 5, 2012
    Inventor: Tae-Kyeong Ko