Abstract: Disclosed is an image processing method. The method includes the steps of receiving an image obtained from a plurality of vehicles positioned on a road, storing the received images according to acquisition information of the received images; determining a reference image and a target image based on images having the same acquisition information among the stored images, performing an image registration using a plurality of feature points extracted from each of the determined reference image and target image, performing a transparency process for each of the reference image and the target image performed with the image registration, extracting static objects from the transparency-processed image, and comparing the extracted static objects with objects on an electronic map pre-stored to updating the electronic map data, when the objects on the electronic map data pre-stored are different from the extracted static objects.

Abstract: A method for controlling autonomous lane change of a moving body is disclosed. The method includes calculating a driving route from a current location of the moving body to a destination; determining whether an intersection or a forked road exists at a predetermined distance from the current location of the moving body on the calculated driving route; checking, when the intersection or the forked road exists, link information corresponding to a lane in which the moving body is located, and determining a moving direction toward the intersection or the forked road; determining an entry route for entering the intersection or the forked road according to the determined moving direction; and generating a control signal for controlling a moving direction of the moving body according to the determined entry route.

Abstract: A stacked memory device includes: a logic semiconductor die; a plurality of memory semiconductor dies stacked with the logic semiconductor die, wherein each of the memory semiconductor dies includes a memory integrated circuit and one or more of the memory semiconductor dies is a calculation semiconductor die including a calculation unit; and through-silicon vias electrically connecting the logic semiconductor die and the plurality of memory semiconductor dies, wherein each of the calculation units is configured to perform calculations based on broadcast data and internal data and to generate calculation result data, wherein the broadcast data is commonly provided to the calculation semiconductor dies through the through-silicon vias, and the internal data is respectively read from the memory integrated circuits of the calculation semiconductor dies.

Abstract: A stacked memory device includes: a logic semiconductor die; a plurality of memory semiconductor dies stacked with the logic semiconductor die, wherein each of the memory semiconductor dies includes a memory integrated circuit and one or more of the memory semiconductor dies is a calculation semiconductor die including a calculation unit; and through-silicon vias electrically connecting the logic semiconductor die and the plurality of memory semiconductor dies, wherein each of the calculation units is configured to perform calculations based on broadcast data and internal data and to generate calculation result data, wherein the broadcast data is commonly provided to the calculation semiconductor dies through the through-silicon vias, and the internal data is respectively read from the memory integrated circuits of the calculation semiconductor dies.

Abstract: A stacked memory device includes: a logic semiconductor die; a plurality of memory semiconductor dies stacked with the logic semiconductor die, wherein each of the memory semiconductor dies includes a memory integrated circuit and one or more of the memory semiconductor dies is a calculation semiconductor die including a calculation unit; and through-silicon vias electrically connecting the logic semiconductor die and the plurality of memory semiconductor dies, wherein each of the calculation units is configured to perform calculations based on broadcast data and internal data and to generate calculation result data, wherein the broadcast data is commonly provided to the calculation semiconductor dies through the through-silicon vias, and the internal data is respectively read from the memory integrated circuits of the calculation semiconductor dies.

Abstract: A stacked memory device includes: a logic semiconductor die; a plurality of memory semiconductor dies stacked with the logic semiconductor die, wherein each of the memory semiconductor dies includes a memory integrated circuit and one or more of the memory semiconductor dies is a calculation semiconductor die including a calculation unit; and through-silicon vias electrically connecting the logic semiconductor die and the plurality of memory semiconductor dies, wherein each of the calculation units is configured to perform calculations based on broadcast data and internal data and to generate calculation result data, wherein the broadcast data is commonly provided to the calculation semiconductor dies through the through-silicon vias, and the internal data is respectively read from the memory integrated circuits of the calculation semiconductor dies.

Abstract: A stacked memory device includes; a logic semiconductor die; a plurality of memory semiconductor dies stacked with the logic semiconductor die, wherein each of the memory semiconductor dies includes a memory integrated circuit and one or more of the memory semiconductor dies is a calculation semiconductor die including a calculation unit; and through-silicon vias electrically connecting the logic semiconductor die and the plurality of memory semiconductor dies, wherein each of the calculation units is configured to perform calculations based on broadcast data and internal data and to generate calculation result data, wherein the broadcast data is commonly provided to the calculation semiconductor dies through the through-silicon vias, and the internal data is respectively read from the memory integrated circuits of the calculation semiconductor dies.

Abstract: A stacked memory device includes; a logic semiconductor die; a plurality of memory semiconductor dies stacked with the logic semiconductor die, wherein each of the memory semiconductor dies includes a memory integrated circuit and one or more of the memory semiconductor dies is a calculation semiconductor die including a calculation unit; and through-silicon vias electrically connecting the logic semiconductor die and the plurality of memory semiconductor dies, wherein each of the calculation units is configured to perform calculations based on broadcast data and internal data and to generate calculation result data, wherein the broadcast data is commonly provided to the calculation semiconductor dies through the through-silicon vias, and the internal data is respectively read from the memory integrated circuits of the calculation semiconductor dies.