Patents by Inventor Taekyung Won

Taekyung Won has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Plasma display panel with a low K dielectric layer
    Patent number: 7122962
    Abstract: A plasma display panel including a low k dielectric layer. In one embodiment, the dielectric layer is comprises a fluorine-doped silicon oxide layer such as an SiOF layer. In another embodiment, the dielectric layer comprises a Black Diamond™ layer. In certain embodiments, a capping layer such as SiN or SiON is deposited over the dielectric layer.
    Type: Grant
    Filed: June 11, 2003
    Date of Patent: October 17, 2006
    Assignee: Applied Materials, Inc.
    Inventors: Kam S. Law, Quanyuan Shang, Takako Takehara, Taekyung Won, William R. Harshbarger, Dan Maydan
  • Plasma display panel with a low k dielectric layer
    Publication number: 20030218424
    Abstract: A plasma display panel including a low k dielectric layer. In one embodiment, the dielectric layer is comprises a fluorine-doped silicon oxide layer such as an SiOF layer. In another embodiment, the dielectric layer comprises a Black Diamond™ layer. In certain embodiments, a capping layer such as SiN or SiON is deposited over the dielectric layer.
    Type: Application
    Filed: June 11, 2003
    Publication date: November 27, 2003
    Applicant: Applied Materials, Inc.
    Inventors: Kam S. Law, Quanyuan Shang, Takako Takehara, Taekyung Won, William R. Harshbarger, Dan Maydan
  • Plasma display panel with a low k dielectric layer
    Patent number: 6610354
    Abstract: A plasma display panel including a low k dielectric layer. In one embodiment, the dielectric layer is comprises a fluorine-doped silicon oxide layer such as an SiOF layer. In another embodiment, the dielectric layer comprises a Black Diamond™ layer. In certain embodiments, a capping layer such as SiN or SiON is deposited over the dielectric layer.
    Type: Grant
    Filed: June 18, 2001
    Date of Patent: August 26, 2003
    Assignee: Applied Materials, Inc.
    Inventors: Kam S. Law, Quanyuan Shang, Takako Takehara, Taekyung Won, William R. Harshbarger, Dan Maydan
  • Plasma display panel with a low k dielectric layer
    Publication number: 20020190651
    Abstract: A plasma display panel including a low k dielectric layer. In one embodiment, the dielectric layer is comprises a fluorine-doped silicon oxide layer such as an SiOF layer. In another embodiment, the dielectric layer comprises a Black Diamond™ layer. In certain embodiments, a capping layer such as SiN or SiON is deposited over the dielectric layer.
    Type: Application
    Filed: June 18, 2001
    Publication date: December 19, 2002
    Applicant: Applied Materials, Inc.
    Inventors: Kam S. Law, Quanyuan Shang, Takako Takehara, Taekyung Won, William R. Harshbarger, Dan Maydan
  • Annealing an amorphous film using microwave energy
    Patent number: 6172322
    Abstract: A system and method for annealing a film on a substrate in a processing chamber, including a microwave generator disposed to provide microwaves to an area within the interior of the chamber. The microwaves have a frequency such that the film is substantially absorptive at the frequency but the substrate is not substantially absorptive at the frequency. A waveguide distributes the microwaves over the surface of the film to provide a substantially uniform dosage of microwaves over the surface of the film. The method includes depositing a film on a substrate in the processing chamber. During at least a portion of the time of the depositing step, microwaves are generated having a frequency such that the film has an absorption peak at the frequency but the substrate lacks a substantial absorption peak at the frequency. The microwaves are directed towards the film.
    Type: Grant
    Filed: November 7, 1997
    Date of Patent: January 9, 2001
    Assignee: Applied Technology, Inc.
    Inventors: Quanyuan Shang, Robert McCormick Robertson, Kam S. Law, Takako Takehara, Taekyung Won, Sheng Sun