Abstract: A plasma control device includes a matching circuit, a resonance circuit, and a controller. The matching circuit is connected to a first electrode of a plasma chamber including the first electrode and a second electrode, and matches impedance of a radio frequency (RF) power by an RF driving signal with an impedance of the first electrode. The RF driving signal is based on a first RF signal having a first frequency. The resonance circuit is connected between the second electrode and a ground voltage, and controls plasma distribution within the plasma chamber by providing resonance with respect to harmonics associated with the first frequency and by adjusting a ground impedance between the second electrode and the ground voltage. The controller provides the resonance circuit with a capacitance control signal associated with the resonance and switch control signals associated with the ground impedance.

Abstract: A conditioner of a chemical mechanical polishing (CMP) apparatus includes a disk to polish a polishing pad of the CMP apparatus, a driver to rotate the disk, a lifter to lift the driver, an arm to rotate the lifter, and a connector to connect the driver to the lifter, the driver being tiltable with respect to the lifter.

Abstract: A method of fabricating a semiconductor device is disclosed. The method may include forming a parent pattern, forming an upper thin film on the parent pattern, forming a child pattern on the upper thin film, measuring a diffraction light from the parent and child patterns to obtain an intensity difference curve of the diffraction light versus its wavelength, and performing an overlay measurement process on the parent and child patterns using the diffraction light, which has the same wavelength as a peak of the intensity difference curve located near a peak of reflectance of the parent and child patterns, to obtain an overlay measurement value.

Abstract: A plasma processing apparatus includes: an electrostatic chuck supporting a wafer, and connected to a first power supply, an edge ring disposed to surround an edge of the electrostatic chuck and formed of a material having a first resistivity value, a dielectric ring supporting a lower portion of the edge ring, formed of a material having a second resistivity value lower than that of the first resistivity value, and connected to a second power supply, and an electrode ring disposed in a region overlapping the dielectric ring, in contact with a lower surface of the edge ring, and formed of a material having a third resistivity value greater than the first resistivity value, wherein the third resistivity value is a value of 90 ?cm to 1000 ?cm.

Abstract: A plasma generator may include a dielectric tube, an inner helical coil surrounding the dielectric tube and configured to generate plasma by forming a stationary wave of at least one of a magnetic field and an electromagnetic wave in the dielectric tube, a variable capacitor configuring a closed loop with the inner helical coil, an outer helical coil surrounding the inner helical coil and magnetically coupled to the inner helical coil, and a radio frequency (RF) power supply configured to provide RF power at a variable frequency to the inner helical coil.

Abstract: A plasma control device includes a matching circuit, a resonance circuit, and a controller. The matching circuit is connected to a first electrode of a plasma chamber including the first electrode and a second electrode, and matches impedance of a radio frequency (RF) power by an RF driving signal with an impedance of the first electrode. The RF driving signal is based on a first RF signal having a first frequency. The resonance circuit is connected between the second electrode and a ground voltage, and controls plasma distribution within the plasma chamber by providing resonance with respect to harmonics associated with the first frequency and by adjusting a ground impedance between the second electrode and the ground voltage. The controller provides the resonance circuit with a capacitance control signal associated with the resonance and switch control signals associated with the ground impedance.

Abstract: Disclosed are chuck assemblies, semiconductor device fabricating apparatuses, and methods of fabricating semiconductor devices. The chuck assembly comprises a chuck base including lower and upper bases, a ceramic plate on the upper base, an edge ring that surrounds the ceramic plate, a ground ring that surrounds an outer sidewall of the edge ring on an edge portion of the lower base, a coupling ring between the ground ring and the upper base and between the edge ring and the edge portion of the lower base, an upper heat sink between the coupling ring and the edge ring, and a sidewall heat sink between the coupling ring and the ground ring and between the coupling ring and the upper base.

Abstract: A chemical mechanical polishing apparatus includes a fixing portion; and a rotary body module including a rotating shaft rotatably installed on the fixing portion, a first rotating unit connected to the rotating shaft and on which a wafer is mounted, and a second rotating unit disposed around the first rotating unit and on which a retainer ring is mounted, wherein the fixing portion comprises a first driving member disposed above the first rotating unit and a second driving member disposed above the second rotating unit, wherein the first and second driving members are comprised of a magnet or an electromagnet, wherein a first magnet, disposed opposite to the first driving member, is provided in the first rotating unit, and a second magnet, disposed opposite to the second driving member, is provided in the second rotating unit, and wherein the first rotating unit and the second rotating unit are independently tilted.

Abstract: A conditioner of a chemical mechanical polishing (CMP) apparatus includes a disk to polish a polishing pad of the CMP apparatus, a driver to rotate the disk, a lifter to lift the driver, an arm to rotate the lifter, and a connector to connect the driver to the lifter, the driver being tiltable with respect to the lifter.

Abstract: A conditioner of a chemical mechanical polishing (CMP) apparatus includes a disk to polish a polishing pad of the CMP apparatus, a driver to rotate the disk, a lifter to lift the driver, an arm to rotate the lifter, and a connector to connect the driver to the lifter, the driver being tiltable with respect to the lifter.

Abstract: A plasma processing apparatus includes: an electrostatic chuck supporting a wafer, and connected to a first power supply, an edge ring disposed to surround an edge of the electrostatic chuck and formed of a material having a first resistivity value, a dielectric ring supporting a lower portion of the edge ring, formed of a material having a second resistivity value lower than that of the first resistivity value, and connected to a second power supply, and an electrode ring disposed in a region overlapping the dielectric ring, in contact with a lower surface of the edge ring, and formed of a material having a third resistivity value greater than the first resistivity value, wherein the third resistivity value is a value of 90 ?cm to 1000 ?cm.

Abstract: Disclosed are chuck assemblies, semiconductor device fabricating apparatuses, and methods of fabricating semiconductor devices. The chuck assembly comprises a chuck base including lower and upper bases, a ceramic plate on the upper base, an edge ring that surrounds the ceramic plate, a ground ring that surrounds an outer sidewall of the edge ring on an edge portion of the lower base, a coupling ring between the ground ring and the upper base and between the edge ring and the edge portion of the lower base, an upper heat sink between the coupling ring and the edge ring, and a sidewall heat sink between the coupling ring and the ground ring and between the coupling ring and the upper base.

Abstract: A method of monitoring a substrate processing apparatus includes applying a high-frequency radio frequency (RF) power signal and a low-frequency RF power signal from a bias power supply apparatus to an electrostatic chuck of a process chamber through a matching circuit. The method further includes applying a direct current (DC) power signal from a DC power supply apparatus to an edge ring of the process chamber through a high-frequency filter and a low-frequency filter. The method further includes measuring a low-frequency RF voltage value at a first point between the matching circuit and the electrostatic chuck, measuring the low-frequency RF voltage value at a second point between the high-frequency filter and the low-frequency filter, and acquiring a voltage ratio between the low-frequency RF voltage value at the first point and the low-frequency RF voltage value at the second point. The method further includes monitoring a state of the edge ring by comparing a threshold with the voltage ratio.

Abstract: A method of fabricating a semiconductor device is disclosed. The method may include forming a parent pattern, forming an upper thin film on the parent pattern, forming a child pattern on the upper thin film, measuring a diffraction light from the parent and child patterns to obtain an intensity difference curve of the diffraction light versus its wavelength, and performing an overlay measurement process on the parent and child patterns using the diffraction light, which has the same wavelength as a peak of the intensity difference curve located near a peak of reflectance of the parent and child patterns, to obtain an overlay measurement value.

Abstract: A plasma processing apparatus includes a substrate chuck having a first region configured to support a substrate and a second region located at a lower level, a focus ring disposed on the second region and surrounding an outer circumferential surface of the first region, a driving unit disposed below the focus ring, the driving unit including a driving source and a driving shaft in contact with a lower surface of the focus ring and configured to adjust a position of an upper surface of the focus ring by a first distance value, a chromatic confocal sensor disposed below the focus ring and configured to measure a second distance value in which the lower surface of the focus ring is moved by irradiating measurement light to the lower surface of the focus ring, and a control unit calculating an error value between the first distance value and the second distance value.

Abstract: Provided is a load cup including a cup having an internal space, a pedestal provided in the internal space, able to be lifted up and down, and loading a wafer onto or unloading a wafer from a polishing head, and a plurality of arrangement parts having a plurality of fastening portions disposed around the pedestal, and moved horizontally in a direction of a center of the pedestal, and arrangement part bodies coupled to the plurality of fastening portions, respectively, and rotated or reciprocated so as to contact a lateral surface of the polishing head, adjusting a center of the wafer to be aligned with a center of the polishing head. A polishing process may then be performed on a layer formed on the wafer.

Abstract: A chemical mechanical polishing apparatus includes a fixing portion; and a rotary body module including a rotating shaft rotatably installed on the fixing portion, a first rotating unit connected to the rotating shaft and on which a wafer is mounted, and a second rotating unit disposed around the first rotating unit and on which a retainer ring is mounted, wherein the fixing portion comprises a first driving member disposed above the first rotating unit and a second driving member disposed above the second rotating unit, wherein the first and second driving members are comprised of a magnet or an electromagnet, wherein a first magnet, disposed opposite to the first driving member, is provided in the first rotating unit, and a second magnet, disposed opposite to the second driving member, is provided in the second rotating unit, and wherein the first rotating unit and the second rotating unit are independently tilted.

Abstract: A conditioner of a chemical mechanical polishing (CMP) apparatus includes a disk to polish a polishing pad of the CMP apparatus, a driver to rotate the disk, a lifter to lift the driver, an arm to rotate the lifter, and a connector to connect the driver to the lifter, the driver being tiltable with respect to the lifter.

Abstract: Provided is a load cup including a cup having an internal space, a pedestal provided in the internal space, able to be lifted up and down, and loading a wafer onto or unloading a wafer from a polishing head, and a plurality of arrangement parts having a plurality of fastening portions disposed around the pedestal, and moved horizontally in a direction of a center of the pedestal, and arrangement part bodies coupled to the plurality of fastening portions, respectively, and rotated or reciprocated so as to contact a lateral surface of the polishing head, adjusting a center of the wafer to be aligned with a center of the polishing head. A polishing process may then be performed on a layer formed on the wafer.

Abstract: A scroll compressor is provided. The scroll compressor may include a fixed scroll having a fixed wrap and a plurality of first key recesses, an orbiting scroll engaged with the fixed scroll to define a compression chambers and having an orbiting wrap and a plurality of second key recesses, the orbiting scroll performing an orbiting motion with respect to the fixed scroll, a drive having a rotation shaft coupled to the orbiting scroll such that one end portion thereof overlaps the orbiting wrap in a lateral direction, and an Oldham ring having a plurality of first and second keys coupled to the plurality of first key recesses and the plurality of second key recesses, respectively. The plurality of second keys may at least temporarily protrude from the plurality of second key recesses in a radial direction during the orbiting motion. Further, the plurality of second key recesses and the plurality of second keys may be disposed to obtain maximum contact areas therebetween at a moment of start of discharging.