Patents by Inventor Tae-Moo Hur

Tae-Moo Hur has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8202364
    Abstract: By controlling the average size of matrix grains of polycrystalline bodies to more than a critical size at which an abnormal, exaggerated or discontinuous grain growth ends, and less than twice the critical size, large single crystals enough for practical use may be made even without occurring abnormal grain growth in polycrystalline bodies only through a heat treatment process without using a melting process and a special apparatus, thereby allowing the mass production of the large single crystals at low costs with high reproduction possibility.
    Type: Grant
    Filed: February 19, 2009
    Date of Patent: June 19, 2012
    Assignee: Ceracomp Co., Ltd.
    Inventors: Ho-Yong Lee, Jong-Bong Lee, Tae-Moo Hur, Dong-Ho Kim
  • Publication number: 20090211515
    Abstract: By controlling the average size of matrix grains of polycrystalline bodies to more than a critical size at which an abnormal, exaggerated or discontinuous grain growth ends, and less than twice the critical size, large single crystals enough for practical use may be made even without occurring abnormal grain growth in polycrystalline bodies only through a heat treatment process without using a melting process and a special apparatus, thereby allowing the mass production of the large single crystals at low costs with high reproduction possibility.
    Type: Application
    Filed: February 19, 2009
    Publication date: August 27, 2009
    Applicant: CERACOMP CO., LTD.
    Inventors: Ho-Yong LEE, Jong-Bong LEE, Tae-Moo HUR, Dong-Ho KIM
  • Patent number: 7208041
    Abstract: An effective, simple and low-cost a method for growing single crystals of perovskite oxideshaving primary and secondary abnormal grain growths according to temperature condition higher than a determined temperature or an atmosphere of heat treatment, involves a perovskite seed single crystal being adjoined to a polycrystal of perovskite oxides and heating the adjoined combination whereby the seed single crystal grows into the polycrystal at the interface therebetween repressing secondary abnormal grain growths inside the polycrystal. 1) The composition ratio of the polycrystal is controlled and/or the specific component(s) of the polycrystal is(are) added in an excess amount compared to the amount of the component(s) of the original composition of the polycrystal, 2) the heating is performed in the temperature range which is over primary abnormal grain growths completion temperature and below secondary abnormal grain growths activation temperature, whereby the seed single crystal grows continuously.
    Type: Grant
    Filed: May 14, 2004
    Date of Patent: April 24, 2007
    Assignee: Ceracomp Co., Ltd.
    Inventors: Ho-Yong Lee, Jong-Bong Lee, Tae-Moo Hur
  • Publication number: 20050150446
    Abstract: The invention relates to a method for growing single crystals in polycrystalline bodies in which abnormal grain growth occurs. The method is characterized by controlling the average size of matrix grains of polycrystalline bodies in which abnormal grain growth occurs, whereby reducing the number density (number of abnormal grains/unit volume) of abnormal grains to generate only a extremely limited number of abnormal grains or inhibit the generation of abnormal grains within the extent of guaranteeing the driving force of abnormal grain growth. Therefore, the invention grows continuously only the extremely limited number of abnormal grains or only the seed single crystal into the polycrystalline body to obtain a large single crystal having a size larger than 50 mm.
    Type: Application
    Filed: October 9, 2003
    Publication date: July 14, 2005
    Applicant: CERACOMP CO. LTD
    Inventors: Ho-Yong Lee, Jong-Bong Lee, Tae-Moo Hur, Dong-Ho Kim
  • Publication number: 20040206296
    Abstract: An effective, simple and low-cost a method for growing single crystals of perovskite oxideshaving primary and secondary abnormal grain growths according to temperature condition higher than a determined temperature or an atmosphere of heat treatment, involves a perovskite seed single crystal being adjoined to a polycrystal of perovskite oxides and heating the adjoined combination whereby the seed single crystal grows into the polycrystal at the interface therebetween repressing secondary abnormal grain growths inside the polycrystal. 1) The composition ratio of the polycrystal is controlled and/or the specific component(s) of the polycrystal is(are) added in an excess amount compared to the amount of the component(s) of the original composition of the polycrystal, 2) the heating is performed in the temperature range which is over primary abnormal grain growths completion temperature and below secondary abnormal grain growths activation temperature, whereby the seed single crystal grows continuously.
    Type: Application
    Filed: May 14, 2004
    Publication date: October 21, 2004
    Applicant: CERACOMP CO., LTD.
    Inventors: Ho-Yong Lee, Jong-Bong Lee, Tae-Moo Hur
  • Patent number: 6758898
    Abstract: The invention relates to a method for growing single crystals of barium titanate [BaTiO3] and barium titanate solid solutions [(BaxM1−x)(TiyN1−y)O3]. This invention is directed to a method for growing single crystals of barium titanate or barium titanate solid solutions showing the primary and secondary abnormal grain growths with increasing temperature higher than the liquid formation temperature, characterized by comprising the step for a few secondary abnormal grains to continue to grow at a temperature slightly below the critical temperature where the secondary abnormal grain growth starts to occur. The method for growing single crystals of barium titanate or barium titanate solid solutions according to this invention has the advantage of providing an effective low cost in manufacturing process for single crystals by using a conventional heat-treatment process without the need of special equipment.
    Type: Grant
    Filed: June 7, 2002
    Date of Patent: July 6, 2004
    Assignee: Ceracomp Co. Ltd.
    Inventors: Ho-Yong Lee, Jao-Suk Kim, Jong-Bong Lee, Tae-Moo Hur, Doe-Yeon Kim, Nong-Moon Hwang, Byoung-Ki Lee, Sung-Yoon Chung, Suk-Joong L. Kang
  • Publication number: 20030015130
    Abstract: The invention relates to a method for growing single crystals of barium titanate [BaTiO3] and barium titanate solid solutions [(BaxM1-x)(TiyN1-y)O3]. This invention is directed to a method for growing single crystals of barium titanate or barium titanate solid solutions showing the primary and secondary abnormal grain growths with increasing temperature higher than the liquid formation temperature, characterized by comprising the step for a few secondary abnormal grains to continue to grow at a temperature slightly below the critical temperature where the secondary abnormal grain growth starts to occur. The method for growing single crystals of barium titanate or barium titanate solid solutions according to this invention has the advantage of providing an effective low cost in manufacturing process for single crystals by using a conventional heat-treatment process without the need of special equipment.
    Type: Application
    Filed: June 7, 2002
    Publication date: January 23, 2003
    Applicant: CERACOMP CO. LTD.
    Inventors: Ho-Yong Lee, Jae-Suk Kim, Jong-Bong Lee, Tae-Moo Hur, Doe-Yeon Kim, Nong-Moon Hwang, Byoung-Ki Lee, Sung-Yoon Chung, Suk-Joong L. Kang
  • Publication number: 20020179000
    Abstract: The invention relates to a method for growing single crystals of Perovskite Oxides. The method is characterized by comprising the steps of (a) contacting a Perovskite seed single with a Perovskite polycrystal and (b) heating the contacted crystals to grow the same structure as the single crystal into the polycrystal, the heating is controlled under conditions which abnormal grains growth is induced in the contacted portion while repressed in the inside of the polycrystal. The method for growing single crystals of Perovskite Oxides according to this invention has an advantage to provide an effective low cost in manufacturing process for single crystals by using usual heat-treatment process without special equipments. The method for growing single crystals of Perovskite Oxides according to this invention can be also applicable to other material systems showing abnormal grain growth behavior.
    Type: Application
    Filed: June 11, 2001
    Publication date: December 5, 2002
    Inventors: Ho-Yang Lee, Jae-Suk Kim, Jong-Bong Lee, Tae-Moo Hur, Doe-Yeon Kim, Nong-Moon Hwang
  • Patent number: 6482259
    Abstract: The invention relates to a method for growing single crystals of barium titanate [BaTiO3] and barium titanate solid solutions [(BaxM1-x)(TiyN1-y)O3]. This invention is directed to a method for growing single crystals of barium titanate or barium titanate solid solutions showing the primary and secondary abnormal grain growths with increasing temperature higher than the liquid formation temperature, characterized by comprising the step for a few secondary abnormal grains to continue to grow at a temperature slightly below the critical temperature where the secondary abnormal grain growth starts to occur. The method for growing single crystals of barium titanate or barium titanate solid solutions according to this invention has an advantage to provide an effective low cost in manufacturing process for single crystals by using usual heat-treatment process without special equipments.
    Type: Grant
    Filed: February 20, 2001
    Date of Patent: November 19, 2002
    Assignee: Ceracomp Co., Ltd.
    Inventors: Ho-Yong Lee, Jae-Suk Kim, Jong-Hong Lee, Tae-Moo Hur, Doe-Yeon Kim, Nong-Moon Hwang, Byoung-Ki Lee, Sung-Yoon Chung, Suk-Joong L. Kang