Abstract: Embodiments of the present disclosure relate to a monitoring circuit and a semiconductor device, and particularly, to a monitoring circuit including an oscillation circuit configured to generate an oscillation signal having a rising characteristic or a falling characteristic according to a threshold voltage level and a counter configured to count the number of rises or the number of falls of the oscillation signal, and a semiconductor device including the monitoring circuit.

Abstract: Embodiments of the present disclosure relate to a monitoring circuit and a semiconductor device, and particularly, to a monitoring circuit including an oscillation circuit configured to generate an oscillation signal having a rising characteristic or a falling characteristic according to a threshold voltage level and a counter configured to count the number of rises or the number of falls of the oscillation signal, and a semiconductor device including the monitoring circuit.

Abstract: Embodiments of the present disclosure relate to a monitoring circuit and a semiconductor device, and particularly, to a monitoring circuit including an oscillation circuit configured to generate an oscillation signal having a rising characteristic or a falling characteristic according to a threshold voltage level and a counter configured to count the number of rises or the number of falls of the oscillation signal, and a semiconductor device including the monitoring circuit.

Abstract: A method for operating a memory system includes: performing a first training operation for alignment between a clock and a data strobe signal; performing a second training operation for alignment between the data strobe signal and the data; detecting an error of the second training operation; and adjusting a delay value of the data strobe signal in response to the detection of the error.

Abstract: A method for operating a memory system includes: performing a first training operation for alignment between a clock and a data strobe signal; performing a second training operation for alignment between the data strobe signal and the data; detecting an error of the second training operation; and adjusting a delay value of the data strobe signal in response to the detection of the error.

Abstract: Embodiments of the present disclosure relate to a monitoring circuit and a semiconductor device, and particularly, to a monitoring circuit including an oscillation circuit configured to generate an oscillation signal having a rising characteristic or a falling characteristic according to a threshold voltage level and a counter configured to count the number of rises or the number of falls of the oscillation signal, and a semiconductor device including the monitoring circuit.

Abstract: A method for operating a memory system includes: performing a first training operation for alignment between a clock and a data strobe signal; performing a second training operation for alignment between the data strobe signal and the data; detecting an error of the second training operation; and adjusting a delay value of the data strobe signal in response to the detection of the error.

Abstract: Embodiments of the present disclosure relate to a monitoring circuit and a semiconductor device, and particularly, to a monitoring circuit including an oscillation circuit configured to generate an oscillation signal having a rising characteristic or a falling characteristic according to a threshold voltage level and a counter configured to count the number of rises or the number of falls of the oscillation signal, and a semiconductor device including the monitoring circuit.

Abstract: Embodiments of the present disclosure relate to a monitoring circuit and a semiconductor device, and particularly, to a monitoring circuit including an oscillation circuit configured to generate an oscillation signal having a rising characteristic or a falling characteristic according to a threshold voltage level and a counter configured to count the number of rises or the number of falls of the oscillation signal, and a semiconductor device including the monitoring circuit.

Abstract: A locking detecting circuit of a Phase Locked Loop (PLL) circuit includes an output signal counter performing an output signal counting operation of counting an output signal of the PLL circuit during a counting time period, a period determiner performing a period changing operation of decreasing the counting time period until a difference between a current period counting value and a preceding period counting value becomes smaller than a threshold value, and a locking detector detecting a locking of the PLL circuit when the difference between the current period counting value and the preceding period counting value becomes smaller than the threshold value.

Abstract: A method for operating a memory system includes: performing a first training operation for alignment between a clock and a data strobe signal; performing a second training operation for alignment between the data strobe signal and the data; detecting an error of the second training operation; and adjusting a delay value of the data strobe signal in response to the detection of the error.

Abstract: A synchronization circuit may include: a variable delay circuit configured to delay a first clock signal by a varied delay time according to delay control signals, and configured to output a delayed signal of the variable delay circuit as a second clock signal; a phase detector configured to generate a phase detection signal by detecting a phase difference between the first and second clock signals; and a delay control circuit configured to perform a phase unstable period detection operation according to the phase detection signal, and configured to perform a delay skip operation to adjust the delay control signals such that a phase unstable period, detected in the phase unstable period detection operation, is skipped in a delay time tuning operation.

Abstract: A synchronization circuit may include: a variable delay circuit configured to delay a first clock signal by a varied delay time according to delay control signals, and configured to output a delayed signal of the variable delay circuit as a second clock signal; a phase detector configured to generate a phase detection signal by detecting a phase difference between the first and second clock signals; and a delay control circuit configured to perform a phase unstable period detection operation according to the phase detection signal, and configured to perform a delay skip operation to adjust the delay control signals such that a phase unstable period, detected in the phase unstable period detection operation, is skipped in a delay time tuning operation.

Abstract: A method for measuring an odor in an olfactory sensing device is provided. The method includes sensing an odor using at least one odor sensor, estimating a current temperature using a temperature count coefficient of a monitor sensor, calculating an odor count coefficient variation for the at least one sensor, and measuring the odor by applying a temperature count coefficient variation corresponding to a temperature change to the odor count coefficient variation.

Abstract: A cover device including: a rear cover; a front cover rotatable with respect to the rear cover; and an odor detection module mounted to the front cover. The cover device enables miniaturization of an odor detector and ensures portability of an electronic device even through the odor detector is connected to the electronic device, and enhances the outward appearances of the electronic device, and an electronic device having the cover device.

Abstract: A cover device including: a rear cover; a front cover rotatable with respect to the rear cover; and an odor detection module mounted to the front cover.

Abstract: A method for measuring an odor in an olfactory sensing device is provided. The method includes sensing an odor using at least one odor sensor, estimating a current temperature using a temperature count coefficient of a monitor sensor, calculating an odor count coefficient variation for the at least one sensor, and measuring the odor by applying a temperature count coefficient variation corresponding to a temperature change to the odor count coefficient variation.

Abstract: A digital duty cycle correction circuit includes a duty cycle controller and a digital duty control code generator. The duty cycle controller generates first and second output clock signals by compensating duty cycles of first and second input clock signals based on a digital duty control code. The digital duty control code generator generates the digital duty control code based on a frequency value obtained by converting duty cycle information of the first output clock signal and the second output clock signal.

Abstract: A frequency compensation apparatus includes a first counter setting a reference period using a main clock, a second counter sensing a change in the frequency of a sub clock using the reference period, and a frequency compensator providing a compensated frequency using information on the changed frequency of the sub clock. Related methods are also described.

Abstract: Provided is a semiconductor device for compensating for an internal skew without training with an external device. The semiconductor device includes a signal generating unit configured to generate and output a reference signal, a first receiving unit configured to receive the reference signal and output a first output signal, a second receiving unit configured to receive the reference signal and output a second output signal, a delay unit configured to delay the first output signal by a certain time and output a delayed signal, a sampling unit configured to sample the second output signal based on the delayed signal and output sampling data, and a skew controlling unit configured to control the delaying unit based on the sampling data.