Abstract: A gas injector is designed to better withstand the conditions inside a semiconductor manufacturing apparatus, such as a plasma etching apparatus. The gas injector includes a body in the form of a block of ceramic material, and a gas injection section formed by first and second gas injection holes extending through the block of ceramic material. The block of ceramic material has a first cylindrical portion and a second cylindrical portion extending from the first cylindrical portion. The first cylindrical portion is wider and longer than the second cylindrical portion. The first holes of the gas injecting section extend through the first cylindrical portion of the block of ceramic material, whereas the second holes extend through the second cylindrical portion contiguously each from a respective one of the first holes and concentric therewith. The first holes are also wider and longer than the second holes. The gas injector is disposed at an upper portion of a plasma etching apparatus.

Abstract: A thermoelectric-cooling temperature control apparatus for a semiconductor device fabrication facility maintains a temperature condition, such as the temperature of a wafer, stable during the fabrication process.

Abstract: A photoresist mask removing method for effectively removing polymers produced as by-products during etching of a metal layer includes processing the polymers prior to removal to facilitate removal thereof. To remove the photoresist mask remaining on a semiconductor substrate after the metal layer is dry-etched in an etching chamber, the semiconductor substrate is preferably conveyed from the etching chamber to an ashing chamber without vacuum break. The semiconductor substrate is pretreated by supplying N2 gas into the ashing chamber under the vacuum state without applying RF power to the ashing chamber to blow the N2 gas on the semiconductor substrate heated up to a predetermined temperature. This pretreatment modifies the polymer by-products to facilitate removal thereof during ashing. The photoresist mask and the polymer by-products are removed by ashing in the ashing chamber.

Abstract: Disclosed is a cable duct device for a rack capable of not only allowing cables to be easily held therein and to be easily released therefrom, but also stably holding cables therein even when external impact is applied thereto. The cable duct device includes a pair of duct assemblies coupled to each other while defining a cable receiving space therebetween.

Abstract: A multiple reaction chamber system includes a transfer chamber, a load lock chamber connected to the transfer chamber, and a plurality of reaction chambers connected to the transfer chamber. An alignment chamber is connected to the transfer chamber, disposed along a path of wafer transfer from the load lock chamber to the plurality of reaction chambers, and includes a wafer aligner. A wafer recognition, disposed along a post-aligner portion of the path of wafer transfer system, recognizes an identification code of an individual wafer. A controlling system is in data communication with the wafer recognition system for selecting a selected chamber of the plurality of reaction chambers into which the individual wafer is to be transferred. Because individual wafers can be associated with each reaction chamber, a defective reaction chamber can be identified immediately and its use discontinued so that unproductive operations can be eliminated.

Abstract: A method of manufacturing semiconductor device that improves the alignment margin between a contact hole and a device pattern includes a layer having an upper vertically shaped portion and a lower symmetrically inclined shaped portion. That is, the lower portion is tapered.

Abstract: A device for fixing the optical elements of an optical fiber amplifier in a packaging box comprises a central opening provided in the packaging box for making a connection with an electronic circuit, an optical fiber holder for holding the erbium doped optical fiber around the central opening, a plurality of guide supports provided in the upper and lower sides of the optical fiber holder for holding the optical isolators, wavelength division multiplexers and optical taps, and protectors provided in the left and right sides of the optical fiber holder for holding the thermocontractile tubes.

Abstract: A method of forming a low-k dielectric insulating layer includes forming the dielectric insulating layer and then removing hydrogen bonds in the dielectric insulating layer. The dielectric layer as formed is preferably a HSQ film which contains the structure Si--O--H. Hydrogen is removed from the dielectric layer by either: a heat treatment in plasma, an ozone reduction process, an ion implantation process, or electron beam bombardment.

Abstract: A communications equipment housing may be constructed using an upper plate, four vertical members extending downward from the four corners of the upper plate and attach to a lower plate. A front side plate and a rear side plate are attached to the sides of the housing and two lateral side plates are installed on the sides between the front side plate and the rear side plate. Both lateral sides are composed of two main lateral side plates and an auxiliary lateral side plate that is located between the two main lateral side plates. An female groove is formed along an edge of each main lateral side plate in a direction perpendicular to the planes of the top and bottom plates. The auxiliary lateral side plate has projecting male protrusions formed along two lateral edges of the auxiliary plate in a direction perpendicular to the planes of the top and bottom plate.

Abstract: A dry etching apparatus used for manufacture of a semiconductor device includes a plasma confinement ring secured by screws to a cathode, an anode, and a metal focusing ring extending around the anode for enhancing the uniformity of the plasma. The screws are located a maximum distance away from the focusing ring. Thus, micro-arcing is prevented from occurring between the focusing ring and the screws. The confinement ring is also designed to distribute the plasma stream only onto the wafer, so that the generation of contamination particles is suppressed during etching.

Abstract: A rack for a communication system as, including a backboard having a first side, a second side, a connector capable of being connected to an electrical communication cable, and a plurality of through apertures. A first side panel has an open slot and a closed slot. The first side panel is connected to the first side of the backboard while a second side panel having a grooved slot is connected to the second side of the backboard. A rear panel has a first flange for detaining the first side panel, a second flange for detaining the second side panel, and first and second longitudinal detaining units for positioning strips perforated by columns of holes aligned with through apertures. The first and second longitudinal detaining units are located at sides of the rear panel. The strips are insertable into one of said strip detaining units. A plurality of guide plates have guide pins and a rear side.

Abstract: A semiconductor device includes a metal wiring layer having a plurality of parallel, actual metal lines, with an endmost one of the actual metal lines being disposed adjacent a wiring-free region. The actual metal lines are electrically connected to an active circuit portion of the semiconductor device. At least one dummy metal line is interposed between the endmost one of the actual metal lines and the wiring-free region, with the at least one dummy metal line being disconnected from the active circuit portion. The dummy metal line(s) serve to prevent corrosion of the actual metal lines when the metal wiring layer is patterned by an etching process.