Abstract: A reference signal (RS) transmission system to transmit a channel state information (CSI) RS for extraction of CSI to a relay and a macro terminal is disclosed. The base station transmits information on a sub frame containing the CSI RS to the relay or the macro terminal. The macro terminal and the relay receive the CSI RS using the information on the sub frame. The macro terminal and the relay extract the CSI using the CSI RS and transmit the extracted CSI to the base station.

Abstract: The present invention relates to a method of manufacturing polycrystalline silicon ingot using a crucible in which an oxygen exhaust passage is formed by single crystal or polycrystalline rods, the method including the steps of: manufacturing the single crystal or polycrystalline silicon rods each having the shape of a quadrilateral pillar; putting the single crystal or polycrystalline quadrilateral pillar-shaped silicon rods into the crucible in such a manner as to be arranged close to one another along the inner peripheral surface of the crucible to thus form a space portion inside the single crystal or polycrystalline silicon rods, into which silicon chunks are put, and the oxygen exhaust passages between the inner peripheral surface of the crucible and the respective surfaces of the single crystal or polycrystalline silicon rods oriented toward the inner peripheral surface of the crucible; putting the silicon chunks into the space portion of the crucible; and melting and crystallizing the silicon chunks.

Abstract: An insert rubber for improving aerodynamics of a tire and an installation method thereof, and provides an insert rubber for improving aerodynamics of a tire and an installation method thereof, in which, by eliminating a space which is located between a bead of a tire and a flange of a rim, airflow is prevented from being introduced between the bead and the flange while a vehicle travels, and the space between the bead and the flange is filled with the insert rubber, thereby preventing turbulence from being generated in the space between the bead and the flange.

Abstract: Disclosed is a semiconductor package polyimide film, which may prevent the stripping of a thermoplastic polyimide layer by reducing a difference in the average coefficient of linear thermal expansion between a substrate film and the thermoplastic polyimide layer, and may be readily detached after a reflow process is completed since the thermoplastic polyimide layer to be attached to a lead frame has a glass transition temperature less than or equal to a reflow process temperature.

Abstract: Disclosed is a semiconductor package polyimide film, which may prevent the stripping of a thermoplastic polyimide layer by reducing a difference in the average coefficient of linear thermal expansion between a substrate film and the thermoplastic polyimide layer, and may be readily detached after a reflow process is completed since the thermoplastic polyimide layer to be attached to a lead frame has a glass transition temperature less than or equal to a reflow process temperature.

Abstract: An insert rubber for improving aerodynamics of a tire and an installation method thereof, and provides an insert rubber for improving aerodynamics of a tire and an installation method thereof, in which, by eliminating a space which is located between a bead of a tire and a flange of a rim, airflow is prevented from being introduced between the bead and the flange while a vehicle travels, and the space between the bead and the flange is filled with the insert rubber, thereby preventing turbulence from being generated in the space between the bead and the flange.

Abstract: Disclosed are a polyimide film for a semiconductor package reflow process, and a manufacturing method therefor, the polyimide film being capable of ensuring ease of attachment/detachment of a semiconductor chip after a reflow process is completed, by means of the application of a thermoplastic polyimide layer having a glass transition temperature less than or equal to a reflow process temperature.

Abstract: A method of determining a driving lane of an autonomous vehicle is provided. The method includes classifying, by an autonomous driving logic of an electronic control unit (ECU), at least one object sensed in front of the autonomous vehicle as a stationary object or a moving object. A clustering group is generated by clustering the stationary object and a boundary of an entire driving road is determined based on a position of a moving object approaching the subject vehicle among the moving objects and the clustering group. Additionally, the method includes comparing positions of a plurality of lanes based on lane widths of the lanes for travel of the subject vehicle with the boundary of the entire driving road and determining a driving lane of the subject vehicle.

Abstract: Disclosed herein is a method of recognizing a vehicle near an autonomous vehicle. The method includes, using an autonomous driving logic of an electronic control unit (ECU) extracting nearby vehicle information by sensing at least one nearby vehicle from a distance sensed at each angle within a certain angular range. The method further includes calculating an misrecognition index indicating a degree of closeness of a shape of the nearby vehicle to a shape of an exhaust gas based on the nearby vehicle information, executing an exhaust gas removal algorithm for correcting the nearby vehicle information when the misrecognition index is greater than a threshold misrecognition index, and estimating movement of the nearby vehicle after a current frame using the nearby vehicle information or the corrected nearby vehicle information obtained through the exhaust gas removal algorithm.

Abstract: A method of controlling lane change of an autonomous vehicle is provided. The method includes determining a type of a command for lane change by an autonomous driving logic of an electronic control unit (ECU) in response to the command for lane change being generated. When the command for lane change is not a specific command for lane change, attributes of each of at least one region included in a change target region is determined using information regarding the change target region. The attributes of each of the at least one region are corrected using information regarding a lane in which the autonomous vehicle is driven and a lane change region is determined from the at least one region based on the corrected attributes of each of the at least one region.

Abstract: Disclosed are a polyimide film for a semiconductor package reflow process, and a manufacturing method therefor, the polyimide film being capable of ensuring ease of attachment/detachment of a semiconductor chip after a reflow process is completed, by means of the application of a thermoplastic polyimide layer having a glass transition temperature less than or equal to a reflow process temperature.

Abstract: A method of controlling lane change of an autonomous vehicle is provided. The method includes determining a type of a command for lane change by an autonomous driving logic of an electronic control unit (ECU) in response to the command for lane change being generated. When the command for lane change is not a specific command for lane change, attributes of each of at least one region included in a change target region is determined using information regarding the change target region. The attributes of each of the at least one region are corrected using information regarding a lane in which the autonomous vehicle is driven and a lane change region is determined from the at least one region based on the corrected attributes of each of the at least one region.

Abstract: Disclosed herein is a method of recognizing a vehicle near an autonomous vehicle. The method includes, using an autonomous driving logic of an electronic control unit (ECU) extracting nearby vehicle information by sensing at least one nearby vehicle from a distance sensed at each angle within a certain angular range. The method further includes calculating an misrecognition index indicating a degree of closeness of a shape of the nearby vehicle to a shape of an exhaust gas based on the nearby vehicle information, executing an exhaust gas removal algorithm for correcting the nearby vehicle information when the misrecognition index is greater than a threshold misrecognition index, and estimating movement of the nearby vehicle after a current frame using the nearby vehicle information or the corrected nearby vehicle information obtained through the exhaust gas removal algorithm.

Abstract: A method of determining a driving lane of an autonomous vehicle is provided. The method includes classifying, by an autonomous driving logic of an electronic control unit (ECU), at least one object sensed in front of the autonomous vehicle as a stationary object or a moving object. A clustering group is generated by clustering the stationary object and a boundary of an entire driving road is determined based on a position of a moving object approaching the subject vehicle among the moving objects and the clustering group. Additionally, the method includes comparing positions of a plurality of lanes based on lane widths of the lanes for travel of the subject vehicle with the boundary of the entire driving road and determining a driving lane of the subject vehicle.

Abstract: A system for supplying LNG fuel includes a fuel supplying line connected from an LNG storage tank to an engine, a boosting pump provided on the fuel supplying line and configured to pressurize LNG outputted from the LNG storage tank and cool down in a standby mode, a high pressure pump configured to pressurize the LNG outputted from the boosting pump to high pressure, and a return line connected between the LNG storage tank and the high pressure pump, in which the LNG is returned through the return line.

Abstract: The present invention relates to a method for preparing a CIS- or CIGS-based light-absorbing layer which is included in a thin film solar cell. More particularly, the present invention relates to a method for preparing a CIS- or CIGS-based light-absorbing layer which ultimately improves the efficiency of a solar cell since the remaining carbon impurities in the formed light-absorbing layer are minimized and additional sulfurization treatment or selenium treatment is made optional, not requisite.

Abstract: The present invention relates to a method for preparing a CIS- or CIGS-based light-absorbing layer which is included in a thin film solar cell. More particularly, the present invention relates to a method for preparing a CIS- or CIGS-based light-absorbing layer which ultimately improves the efficiency of a solar cell since the remaining carbon impurities in the formed light-absorbing layer are minimized and additional sulfurization treatment or selenium treatment is made optional, not requisite.

Abstract: A system for supplying LNG fuel includes a fuel supplying line connected from an LNG storage tank to an engine, a boosting pump provided on the fuel supplying line and configured to pressurize LNG outputted from the LNG storage tank and cool down in a standby mode, a high pressure pump configured to pressurize the LNG outputted from the boosting pump to high pressure, and a return line connected between the LNG storage tank and the high pressure pump, in which the LNG is returned through the return line.

Abstract: A layered heterostructure field effect transistor (HFET) comprises a substrate, a first semiconductor oxide layer grown on the substrate, and a second semiconductor oxide layer grown on the first layer semiconductor layer and having an energy band gap different from that of the first semiconductor layer, and the second layer also having a gate region and a drain region and a source region with electrical contacts to gate, drain and source regions sufficient to form a HFET. The substrate may be a material, including a single crystal material, and may contain a buffer layer material on which the first semiconductor layer is grown. The conductivity type of the first and second semiconductor layers and the composition of the semiconductor oxide layers can be selected to improve performance for desired operational features of the HFET. This layered structure can be applied for the improvement in the function and high frequency and high power performance of semiconductor HFET devices.

Abstract: Semiconductor films and structures, such as films and structures utilizing zinc oxide or other metal oxides, and processes for forming such films and structures, are provided for use in metal oxide semiconductor light emitting devices and other metal oxide semiconductor devices, such as ZnO based semiconductor devices.