Abstract: A method for fabricating a semiconductor memory device includes forming a photoresist layer on a substrate, performing an exposure process such by illuminating a first area of the photoresist layer with a first amount of a light and illuminating a second area of the photoresist layer with a light of a second amount smaller than the first amount, removing the first area of the photoresist layer to form a photoresist pattern, and forming a capping layer on a surface of the photoresist pattern.

Abstract: A method for manufacturing a semiconductor device using an immersion lithography process is disclosed. The immersion lithography process includes forming a photoresist film over an underlying layer of a semiconductor substrate; exposing the photoresist film to light without using an exposure mask; and performing an exposure process using an exposure mask. After exposure using the immersion lithography, a water mark generated from the exposure layer consumes a part of the acid of the exposure layer but the residual acid remains in the exposure layer to prevent generation of pattern defects such as T-top or pattern bridges.

Abstract: An exposure mask for EUV comprises an absorber formed over a mask substrate and a reflecting pattern formed over the absorber. The exposure mask for EUV prevents re-absorption of light reflected from a reflector by an absorber pattern to prevent a shadowing effect. As a result, a photoresist pattern reflects the pattern formed in the exposure mask without distortion, thereby obtaining a desired pattern.

Abstract: A method for manufacturing a semiconductor device includes forming a plurality bar patterns over an underlying layer. A spacer is formed at both sides of the bar patterns and the bar patterns are removed. The spacers are isolated by an exposing process to form a vernier pattern. The underlying layer is etched using the vernier pattern as an etching mask.

Abstract: A method for manufacturing a semiconductor device using an immersion lithography process is disclosed. The immersion lithography process includes forming a photoresist film over an underlying layer of a semiconductor substrate; exposing the photoresist film to light without using an exposure mask; and performing an exposure process using an exposure mask. After exposure using the immersion lithography, a water mark generated from the exposure layer consumes a part of the acid of the exposure layer but the residual acid remains in the exposure layer to prevent generation of pattern defects such as T-top or pattern bridges.