Patents by Inventor Tae Seung Sin

Tae Seung Sin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Address transition detecting circuit
    Patent number: 6639870
    Abstract: The present invention relates to an address transition detecting circuit. The present invention has a control means for control charge/discharge of a given portion of the address transition detecting circuit in order to remove a noise of an address transition detection signal generated by a glitch signal included in a given signal applied to an input terminal of an address transition detecting circuit and also has a noise removing circuit for removing the noise included in the address transition detection signal in the output unit of the address transition detecting circuit. Therefore, the present invention can prevent generation of an unnecessary address transition detection signal pulse upon generation of a glitch and can thus stably drives semiconductor chips even at a high power supply voltage.
    Type: Grant
    Filed: December 7, 2001
    Date of Patent: October 28, 2003
    Assignee: Hynix Semiconductor, Inc.
    Inventor: Tae Seung Sin
  • Address transition detecting circuit
    Publication number: 20030002383
    Abstract: The present invention relates to an address transition detecting circuit. The present invention has a control means for control charge/discharge of a given portion of the address transition detecting circuit in order to remove a noise of an address transition detection signal generated by a glitch signal included in a given signal applied to an input terminal of an address transition detecting circuit and also has a noise removing circuit for removing the noise included in the address transition detection signal in the output unit of the address transition detecting circuit. Therefore, the present invention can prevent generation of an unnecessary address transition detection signal pulse upon generation of a glitch and can thus stably drives semiconductor chips even at a high power supply voltage.
    Type: Application
    Filed: December 7, 2001
    Publication date: January 2, 2003
    Applicant: Hynix Semiconductor Inc.
    Inventor: Tae Seung Sin
  • Flash memory device
    Patent number: 6115289
    Abstract: A flash memory device of the present invention increases a speed of reading data. The conventional art has a problem of losing data due to data collision when increasing the data reading speed by making an operation of an external clock signal fast. However, the flash memory device of the present invention has an advantage of preventing the data loss even in a fast data reading operation by using a temporary buffer and an output control signal for outputting data in the data reading operation.
    Type: Grant
    Filed: April 8, 1999
    Date of Patent: September 5, 2000
    Assignee: LG Semicon Co., Ltd.
    Inventor: Tae-Seung Sin