Abstract: A semiconductor device is disclosed. The semiconductor device includes a gate electrode on a substrate and extending in a first direction, source/drain patterns spaced apart from each other, in a second direction, with the gate electrode interposed therebetween, a gate contact electrically connected to the gate electrode, and an active contact electrically connected to at least one of the source/drain patterns. The active contact includes a lower contact pattern electrically connected to the at least one of the source/drain patterns, the lower contact pattern having a first width in the first direction, and an upper contact pattern electrically connected to a top surface of the lower contact pattern, the upper contact pattern having a second width in the first direction that is smaller than the first width. The upper contact pattern and the gate contact horizontally overlap each other.

Abstract: Disclosed is a method for forming a conversion coating on the outer surface of magnesium or a magnesium alloy by surface treatment with acidic and alkaline solutions. The method is carried out in an environmentally friendly manner to improve the corrosion resistance of the magnesium or magnesium alloy. The method minimizes the damage to the appearance of the magnesium or magnesium even after surface treatment and maximizes the attractive appearance of the magnesium or magnesium alloy.

Abstract: Disclosed herein is a method for the surface treatment of magnesium or a magnesium alloy by anodization to form an anodized oxide coating on the magnesium or magnesium alloy. The method comprises: removing impurities and an oxide layer present on the surface of magnesium or a magnesium alloy using a strongly alkaline aqueous solution (pretreatment); and immersing the pretreated magnesium or magnesium alloy in an alkaline electrolyte and applying a direct current having a current density of 3 A/dm2 or less to the electrolyte to form a magnesium oxide coating (microarc plasma anodization).