Abstract: A power-down method for a system including a plurality of volatile memory devices is disclosed. The method includes providing some of the plurality of volatile memory devices or some memory regions of the volatile memory devices to operate in a self-refresh mode, thereby increasing a rebooting operation speed and reducing power consumption.

Abstract: A power-down method for a system including a plurality of volatile memory devices is disclosed. The method includes providing some of the plurality of volatile memory devices or some memory regions of the volatile memory devices to operate in a self-refresh mode, thereby increasing a rebooting operation speed and reducing power consumption.

Abstract: In an embodiment, a semiconductor device is tested using a probe pad that includes a probing region with which a probe needle makes contact, and a sensing region bordering an edge of the probing region. Electrical signals are applied, and measured results indicate the probe needle's location relative to a test position on the semiconductor device.

Abstract: In an embodiment, a semiconductor device is tested using a probe pad that includes a probing region with which a probe needle makes contact, and a sensing region bordering an edge of the probing region. Electrical signals are applied, and measured results indicate the probe needle's location relative to a test position on the semiconductor device.

Abstract: In an embodiment, a semiconductor device is tested using a probe pad that includes a probing region with which a probe needle makes contact, and a sensing region bordering an edge of the probing region. Electrical signals are applied, and measured results indicate the probe needle's location relative to a test position on the semiconductor device.

Abstract: In a layout structure of pads and a structure of pad used for a test or wire bonding of a semiconductor device, a size of at least one or more non-wire bonding pads is relatively small as compared with a size of at least one or more pads to be used for wire bonding of the semiconductor device. In the pad structure, a pad includes a wire bonding region that has an embossed surface for a portion of top metal layer within a determined pad size to improve the bonding process, and a probe tip contact region that does not have the embossed surface for a surface portion of the top metal layer within the determined pad size, so as to reduce wear of probe tip during testing of the device. Pad pitch can thereby be increased within a limited region, and peripheral circuits can be further formed in regions that would have been occupied in a conventional pad formation region. Higher integration of semiconductor devices and reduced wear of probe tip in probing is thereby realized.

Abstract: In a layout structure of pads and a structure of pad used for a test or wire bonding of a semiconductor device, a size of at least one or more non-wire bonding pads is relatively small as compared with a size of at least one or more pads to be used for wire bonding of the semiconductor device. In the pad structure, a pad includes a wire bonding region that has an embossed surface for a portion of top metal layer within a determined pad size to improve the bonding process, and a probe tip contact region that does not have the embossed surface for a surface portion of the top metal layer within the determined pad size, so as to reduce wear of probe tip during testing of the device. Pad pitch can thereby be increased within a limited region, and peripheral circuits can be further formed in regions that would have been occupied in a conventional pad formation region. Higher integration of semiconductor devices and reduced wear of probe tip in probing is thereby realized.

Abstract: In an embodiment, a semiconductor device is tested using a probe pad that includes a probing region with which a probe needle makes contact, and a sensing region bordering an edge of the probing region. Electrical signals are applied, and measured results indicate the probe needle's location relative to a test position on the semiconductor device.

Abstract: Methods for driving a wordline in a semiconductor memory device are provided. Pursuant to these methods, a wordline drive signal is generated that may be used to activate a first wordline in response to a drive signal that is derived from a row address signal. A wordline reset signal for deactivating the first wordline may then be generated in response to the drive signal derived from the row address signal, a refresh wordline signal established during a refresh operation, and a mode register set wordline signal provided from a mode register. Semiconductor memory devices that implement these methods are also disclosed.

Abstract: Methods for driving a wordline in a semiconductor memory device are provided. Pursuant to these methods, a wordline drive signal is generated that may be used to activate a first wordline in response to a drive signal that is derived from a row address signal. A wordline reset signal for deactivating the first wordline may then be generated in response to the drive signal derived from the row address signal, a refresh wordline signal established during a refresh operation, and a mode register set wordline signal provided from a mode register. Semiconductor memory devices that implement these methods are also disclosed.

Abstract: A wordline driver and method that applies equal stress to wordlines in a multi-row address disturb (MRAD) test. The wordline driver includes a controller, a decoder and a sub-wordline driver. The controller generates a decoder control signal from a signal among input address decoding signals, responsive to an MRAD mode signal. The decoder generates a normal wordline enable signal responsive to the address decoding signals and the decoder control signal. The sub-wordline driver combines the address decoding signals responsive to a normal wordline enable signal and drives the sub-wordline signal as a wordline responsive to a normal wordline enable signal. Consequently, in the MRAD mode, the wordline enable signal is generated later than the sub-wordline signal. Also, the voltage level of the wordlines enabled in the MRAD mode are substantially equivalent, to prevent over stressing of a first enabled wordline from self-boosting.

Abstract: A wordline driver and method that applies equal stress to wordlines in a multi-row address disturb (MRAD) test. The wordline driver includes a controller, a decoder and a sub-wordline driver. The controller generates a decoder control signal from a signal among input address decoding signals, responsive to an MRAD mode signal. The decoder generates a normal wordline enable signal responsive to the address decoding signals and the decoder control signal. The sub-wordline driver combines the address decoding signals responsive to a normal wordline enable signal and drives the sub-wordline signal as a wordline responsive to a normal wordline enable signal. Consequently, in the MRAD mode, the wordline enable signal is generated later than the sub-wordline signal. Also, the voltage level of the wordlines enabled in the MRAD mode are substantially equivalent, to prevent over stressing of a first enabled wordline from self-boosting.