Abstract: The present disclosure relates to a novel antibody-drug conjugate (ADC) targeting claudin 18 isoform 2 (CLDN18.2), an active metabolite of the ADC, a method of producing the ADC, use of the ADC for the treatment and/or prevention of diseases, and use of the ADC for producing a drug for the treatment and/or prevention of diseases, more specifically hyperproliferative and/or angiogenic diseases, for example, cancer, and more particularly, to an antibody-drug conjugate including a novel antibody or antigen-binding fragment thereof that binds to CLDN18.2, and a pharmaceutical composition including the same.

Abstract: A method for forming an element isolating film of a semiconductor device, which is capable of achieving a reduction in topology and a reduction in the occurrence of a bird's beak phenomenon, so that subsequent processes can be easily carried out to fabricate highly integrated semiconductor devices.

Abstract: A method for forming an element isolating film of a semiconductor device, which is capable of achieving a reduction in topology and a reduction in the occurrence of a bird's beak phenomenon, so that subsequent processes can be easily carried out to fabricate highly integrated semiconductor devices.

Abstract: A simple and accurate measurement of leakage current in the junction region of a semiconductor device involves a simple processing step carried out after element-isolating oxide films are formed. A method of measuring the junction leakage current involves providing a first-conduction-type silicon substrate, forming a first-conduction-type well in the substrate, forming element-isolating oxide films on the substrate, implanting second-conduction-type impurity ions in the substrate to form impurity diffusion regions, forming a conductive layer for an electrode over a resulting structure. Then, the method involves patterning the conductive layer to define plural dies that each have plural cells that each include the impurity diffusion regions and the conductive layer. Finally, reverse voltage is applied to the impurity diffusion regions and the substrate so as to measure the junction leakage current.