Abstract: A memory device may include a stack structure, comprised of layers of first and second materials, which are alternately stacked. The stack structure also include a channel layer inside the stack structure. The channel layer may include a first sub-channel layer, a liner layer formed along an inner wall of the first sub-channel layer, and a second sub-channel layer formed along an inner wall of the liner layer.

Abstract: A mount base for a rearview mirror includes: a base body including a first material; and an insert embedded in the base body and including a second material. The base body has a first surface and a second surface opposing the first surface, the insert has a first surface and a second surface opposing the first surface, the first material is softer than the second material, and the second material has higher stiffness than the first material.

Abstract: A mount base for a rearview mirror includes: a base body including a first material; and an insert embedded in the base body and including a second material. The base body has a first surface and a second surface opposing the first surface, the insert has a first surface and a second surface opposing the first surface, the first material is softer than the second material, and the second material has higher stiffness than the first material.

Abstract: A semiconductor device includes a stack structure including conductive layers and insulating layers that are alternately stacked with each other, a first channel layer passing through the stack structure and including a metal oxide-based semiconductor, and a second channel layer adjacent to the first channel layer and including the metal oxide-based semiconductor, wherein the first channel layer has a higher oxygen content than the second channel layer and has a different thickness from the second channel layer.

Abstract: A semiconductor device includes a stack structure including conductive layers and insulating layers that are alternately stacked with each other, a first channel layer passing through the stack structure and including a metal oxide-based semiconductor, and a second channel layer adjacent to the first channel layer and including the metal oxide-based semiconductor, wherein the first channel layer has a higher oxygen content than the second channel layer and has a different thickness from the second channel layer.

Abstract: Disclosed are a coating composition applied on a tempered glass, the tempered glass preventing shattering when impacts are applied, and a manufacturing method thereof. The coating composition comprises a caprolactone-modified acryl resin, an acryl polyol, a polyurethane resin and the like, such that the tempered glass has improved strength and the ceramic part can be removed from a conventional tempered glass. Further provided is a vehicle product such as a vehicle glass component, such that passengers in the vehicle can be protected from the shattering of the broken tempered glass.

Abstract: Disclosed are an oxide thin film transistor and a method of fabricating the same. The oxide thin film transistor according to an embodiment of the present disclosure includes a gate electrode formed on a substrate, a gate insulating layer formed on the gate electrode, an oxide semiconductor layer as a semiconductor active layer, and source and drain electrodes formed on the oxide semiconductor layer. The oxide semiconductor layer is activated by heat of less than 300° C. and a change in the magnetic flux of an applied magnetic field. More specifically, the activation proceeds by activation energy provided by Joule heat generated from eddy current occurring in the oxide semiconductor layer by a change in the magnetic flux, and the heat of less than 300° C.

Abstract: The present disclosure relates to a resin film for laminated glass, laminated glass including the resin film, and a vehicle including the laminated glass. The resin film for laminated glass includes a resin layer having a 3-layer structure, and the resin layer is formed of a resin composition of a specific component.

Abstract: Disclosed are an oxide thin film transistor and a method of fabricating the same. The oxide thin film transistor according to an embodiment of the present disclosure includes a gate electrode formed on a substrate, a gate insulating layer formed on the gate electrode, an oxide semiconductor layer as a semiconductor active layer, and source and drain electrodes formed on the oxide semiconductor layer. The oxide semiconductor layer is activated by heat of less than 300° C. and a change in the magnetic flux of an applied magnetic field. More specifically, the activation proceeds by activation energy provided by Joule heat generated from eddy current occurring in the oxide semiconductor layer by a change in the magnetic flux, and the heat of less than 300° C.

Abstract: The inventive concept relates to a thin film activation method, a thin film transistor fabrication method, and a substrate processing device, and more particularly, to a method of activating a thin film by using electrical energy, a method of fabricating a thin film transistor, and a device of processing a substrate. The thin film activation method according to an embodiment of the inventive concept may include supplying electrical energy to a thin film.

Abstract: Disclosed are a coating composition applied on a tempered glass, the tempered glass preventing shattering when impacts are applied, and a manufacturing method thereof. The coating composition comprises a caprolactone-modified acryl resin, an acryl polyol, a polyurethane resin and the like, such that the tempered glass has improved strength and the ceramic part can be removed from a conventional tempered glass. Further provided is a vehicle product such as a vehicle glass component, such that passengers in the vehicle can be protected from the shattering of the broken tempered glass.

Abstract: The inventive concept relates to a thin film activation method, a thin film transistor fabrication method, and a substrate processing device, and more particularly, to a method of activating a thin film by using electrical energy, a method of fabricating a thin film transistor, and a device of processing a substrate. The thin film activation method according to an embodiment of the inventive concept may include supplying electrical energy to a thin film.

Abstract: Provided is a composition for forming tin oxide semiconductor including a tin precursor compound, an antimony precursor compound, and a solvent, according to an aspect of the present disclosure. Also provided is a method of forming a tin oxide semiconductor thin film. The method includes preparing a composition including a tin precursor compound and an antimony precursor compound dissolved in a solvent; disposing the composition on a substrate; and performing a heat treatment on the substrate coated with the composition.

Abstract: The present invention disclosed herein relates to a method for forming an oxide film and a method for fabricating an oxide thin film transistor, and more particularly, to a method for forming an oxide film and a method for fabricating an oxide thin film transistor which employ a germanium doping. A method for forming an oxide thin film according to an embodiment of the present invention, the method includes: applying a metal compound on a substrate; and heat-treating the substrate, wherein the metal compound solution is prepared by dissolving an indium compound, a zinc compound and a germanium compound in a solvent.

Abstract: A method of forming a tin oxide semiconductor thin film includes preparing a precursor solution including a tin oxide semiconductor, coating the precursor solution on a substrate; and performing a heat treatment on the substrate coated with the precursor solution. A tin compound having a different tin valence according to a semiconductor type of the tin oxide semiconductor may be used in the precursor solution.

Abstract: Provided is a composition for forming tin oxide semiconductor including a tin precursor compound, an antimony precursor compound, and a solvent, according to an aspect of the present disclosure. Also provided is a method of forming a tin oxide semiconductor thin film. The method includes preparing a composition including a tin precursor compound and an antimony precursor compound dissolved in a solvent; disposing the composition on a substrate; and performing a heat treatment on the substrate coated with the composition.

Abstract: An impact absorbing apparatus of a vehicle includes a back beam to secure an impact absorbing space while retreating rearward at the time of a collision accident with a pedestrian. This makes it possible to prevent direct contact between the back beam, which is a rigid body, and the pedestrian. Therefore, injury to the pedestrian may be significantly decreased.

Abstract: A pedestrian protective radiator grill includes a radiator grill, an operation unit, and a guide unit. The radiator grill is provided at a front end portion of a vehicle and has an upper end portion that moves forward away from a vehicle body so that the radiator grill becomes perpendicular to the ground. The operation unit is connected to the radiator grill and pushes the radiator grill in a forward direction of the vehicle when an impact signal is input. The guide unit provided under the radiator grill guides forward linear movement of the radiator grill when the radiator grill is pushed forward by the operation unit, and guides rotational movement of the upper end portion of the radiator grill after the radiator grill reaches an end of its movable range.

Abstract: An impact absorbing apparatus of a vehicle includes a back beam to secure an impact absorbing space while retreating rearward at the time of a collision accident with a pedestrian. This makes it possible to prevent direct contact between the back beam, which is a rigid body, and the pedestrian. Therefore, injury to the pedestrian may be significantly decreased.

Abstract: A pedestrian protective radiator pill includes a radiator pill, an operation unit, and a guide unit. The radiator pill is provided at a front end portion of a vehicle and has an upper end portion that moves forward away from a vehicle body so that the radiator pill becomes perpendicular to the ground. The operation unit is connected to the radiator pill and pushes the radiator grill in a forward direction of the vehicle when an impact signal is input. The guide unit provided under the radiator grill guides forward linear movement of the radiator grill when the radiator pill is pushed forward by the operation unit, and guides rotational movement of the upper end portion of the radiator pill after the radiator grill reaches an end of its movable range.