Abstract: In an embodiment, a ventilation duct device for a vehicle seat, includes a cushion duct, a blower coupled to the cushion duct, configured for air exiting the blower to enter the cushion duct, a back duct, a corrugated pipe, configured for air exiting the blower to enter the back duct via the corrugated pipe, an elastic support unit coupled to and at least partially located within the corrugated pipe, a first end of the elastic support unit coupled to the cushion duct, a second end of the elastic support unit coupled to the back duct, and a spring member coupled between the first end of the elastic support unit and the second end of the elastic support unit, and the spring member being at least partially located within the corrugated pipe.

Abstract: An apparatus for managing a battery and a method thereof includes a memory that stores computer-executable instructions, and at least one processor that accesses the memory and execute the instructions, wherein the at least one processor is configured to determine a first score based on battery usage data and a battery output map, determine a second score based on first user data on a mileage of a vehicle using the battery and a warranty time of the vehicle, and second user data on a state of health (SOH) of the battery and the warranty time, and derive a battery managing index (BMI) representing a management state of the battery based on the first score and the second score.

Abstract: An embodiment vibration motor assembly of a seat includes a vibration motor and an upper housing disposed around the vibration motor to hold and fix the vibration motor, the upper housing configured to be fixed to a pad of the seat, and the upper housing including a holding part disposed at a circumference of a front surface of the upper housing to hold a circumference of the vibration motor and a fixing part protruding from a rear surface of the upper housing to cover and fix a rear surface of the vibration motor.

Abstract: An apparatus for changing positions of a seat for vehicles includes mechanisms for adjusting the height of the seat for vehicles, adjusting reclining of the seat for vehicles, changing the seat for vehicles into a knee rest posture and changing the seat for vehicles into a relaxed comfort are integrated into one structure. Accordingly, a user selectively implements adjustment of the height of the seat for vehicles, adjustment of reclining of the seat for vehicles, change into the knee rest posture, and change into the relaxed comfort posture, etc., through operation of the switch.

Abstract: A mount base for a rearview mirror includes: a base body including a first material; and an insert embedded in the base body and including a second material. The base body has a first surface and a second surface opposing the first surface, the insert has a first surface and a second surface opposing the first surface, the first material is softer than the second material, and the second material has higher stiffness than the first material.

Abstract: A mount base for a rearview mirror includes: a base body including a first material; and an insert embedded in the base body and including a second material. The base body has a first surface and a second surface opposing the first surface, the insert has a first surface and a second surface opposing the first surface, the first material is softer than the second material, and the second material has higher stiffness than the first material.

Abstract: A semiconductor device includes a stack structure including conductive layers and insulating layers that are alternately stacked with each other, a first channel layer passing through the stack structure and including a metal oxide-based semiconductor, and a second channel layer adjacent to the first channel layer and including the metal oxide-based semiconductor, wherein the first channel layer has a higher oxygen content than the second channel layer and has a different thickness from the second channel layer.

Abstract: A semiconductor device includes a stack structure including conductive layers and insulating layers that are alternately stacked with each other, a first channel layer passing through the stack structure and including a metal oxide-based semiconductor, and a second channel layer adjacent to the first channel layer and including the metal oxide-based semiconductor, wherein the first channel layer has a higher oxygen content than the second channel layer and has a different thickness from the second channel layer.

Abstract: Disclosed are a coating composition applied on a tempered glass, the tempered glass preventing shattering when impacts are applied, and a manufacturing method thereof. The coating composition comprises a caprolactone-modified acryl resin, an acryl polyol, a polyurethane resin and the like, such that the tempered glass has improved strength and the ceramic part can be removed from a conventional tempered glass. Further provided is a vehicle product such as a vehicle glass component, such that passengers in the vehicle can be protected from the shattering of the broken tempered glass.

Abstract: Disclosed are an oxide thin film transistor and a method of fabricating the same. The oxide thin film transistor according to an embodiment of the present disclosure includes a gate electrode formed on a substrate, a gate insulating layer formed on the gate electrode, an oxide semiconductor layer as a semiconductor active layer, and source and drain electrodes formed on the oxide semiconductor layer. The oxide semiconductor layer is activated by heat of less than 300° C. and a change in the magnetic flux of an applied magnetic field. More specifically, the activation proceeds by activation energy provided by Joule heat generated from eddy current occurring in the oxide semiconductor layer by a change in the magnetic flux, and the heat of less than 300° C.

Abstract: The present disclosure relates to a resin film for laminated glass, laminated glass including the resin film, and a vehicle including the laminated glass. The resin film for laminated glass includes a resin layer having a 3-layer structure, and the resin layer is formed of a resin composition of a specific component.

Abstract: Disclosed are an oxide thin film transistor and a method of fabricating the same. The oxide thin film transistor according to an embodiment of the present disclosure includes a gate electrode formed on a substrate, a gate insulating layer formed on the gate electrode, an oxide semiconductor layer as a semiconductor active layer, and source and drain electrodes formed on the oxide semiconductor layer. The oxide semiconductor layer is activated by heat of less than 300° C. and a change in the magnetic flux of an applied magnetic field. More specifically, the activation proceeds by activation energy provided by Joule heat generated from eddy current occurring in the oxide semiconductor layer by a change in the magnetic flux, and the heat of less than 300° C.

Abstract: The inventive concept relates to a thin film activation method, a thin film transistor fabrication method, and a substrate processing device, and more particularly, to a method of activating a thin film by using electrical energy, a method of fabricating a thin film transistor, and a device of processing a substrate. The thin film activation method according to an embodiment of the inventive concept may include supplying electrical energy to a thin film.

Abstract: Disclosed are a coating composition applied on a tempered glass, the tempered glass preventing shattering when impacts are applied, and a manufacturing method thereof. The coating composition comprises a caprolactone-modified acryl resin, an acryl polyol, a polyurethane resin and the like, such that the tempered glass has improved strength and the ceramic part can be removed from a conventional tempered glass. Further provided is a vehicle product such as a vehicle glass component, such that passengers in the vehicle can be protected from the shattering of the broken tempered glass.

Abstract: The inventive concept relates to a thin film activation method, a thin film transistor fabrication method, and a substrate processing device, and more particularly, to a method of activating a thin film by using electrical energy, a method of fabricating a thin film transistor, and a device of processing a substrate. The thin film activation method according to an embodiment of the inventive concept may include supplying electrical energy to a thin film.

Abstract: Provided is a composition for forming tin oxide semiconductor including a tin precursor compound, an antimony precursor compound, and a solvent, according to an aspect of the present disclosure. Also provided is a method of forming a tin oxide semiconductor thin film. The method includes preparing a composition including a tin precursor compound and an antimony precursor compound dissolved in a solvent; disposing the composition on a substrate; and performing a heat treatment on the substrate coated with the composition.

Abstract: The present invention disclosed herein relates to a method for forming an oxide film and a method for fabricating an oxide thin film transistor, and more particularly, to a method for forming an oxide film and a method for fabricating an oxide thin film transistor which employ a germanium doping. A method for forming an oxide thin film according to an embodiment of the present invention, the method includes: applying a metal compound on a substrate; and heat-treating the substrate, wherein the metal compound solution is prepared by dissolving an indium compound, a zinc compound and a germanium compound in a solvent.

Abstract: A method of forming a tin oxide semiconductor thin film includes preparing a precursor solution including a tin oxide semiconductor, coating the precursor solution on a substrate; and performing a heat treatment on the substrate coated with the precursor solution. A tin compound having a different tin valence according to a semiconductor type of the tin oxide semiconductor may be used in the precursor solution.

Abstract: Provided is a composition for forming tin oxide semiconductor including a tin precursor compound, an antimony precursor compound, and a solvent, according to an aspect of the present disclosure. Also provided is a method of forming a tin oxide semiconductor thin film. The method includes preparing a composition including a tin precursor compound and an antimony precursor compound dissolved in a solvent; disposing the composition on a substrate; and performing a heat treatment on the substrate coated with the composition.

Abstract: An impact absorbing apparatus of a vehicle includes a back beam to secure an impact absorbing space while retreating rearward at the time of a collision accident with a pedestrian. This makes it possible to prevent direct contact between the back beam, which is a rigid body, and the pedestrian. Therefore, injury to the pedestrian may be significantly decreased.