Abstract: A quantum dot including a core comprising a first semiconductor nanocrystal including a zinc chalcogenide and a semiconductor nanocrystal shell disposed on the surface of the core and comprising zinc, selenium, and sulfur. The quantum dot does not comprise cadmium, emits blue light, and may exhibit a digital diffraction pattern obtained by a Fast Fourier Transform of a transmission electron microscopic image including a (100) facet of a zinc blende structure. In an X-ray diffraction spectrum of the quantum dot, a ratio of a defect peak area with respect to a peak area of a zinc blende crystal structure is less than about 0.8:1. A method of producing the quantum dot, and an electroluminescent device including the quantum dot are also disclosed.

Abstract: An arc welding device for a secondary battery according to an embodiment of the present invention includes an upper fixing portion in which a plurality of welding electrode units connected to one pole of a welding power are disposed and a lower fixing portion disposed to face the upper fixing portion with an object to be welded therebetween and connected to the other pole of the welding power. The upper fixing portion includes a first facing surface facing the object to be welded and formed to be concave toward the object to be welded and the lower fixing portion includes a second facing surface facing the first facing face and formed to be convex to correspond to the concave shape of the first facing surface.

Abstract: A display device includes a first electrode, an outer electrode surrounding the first electrode, a bank overlapping the outer electrode in a plan view, the bank including an opening that exposes the first electrode, a light emitting element disposed on the first electrode and in the opening of the bank, and a second electrode disposed on the light emitting element. The outer electrode may be electrically disconnected from the first electrode upon a bad contact between a light emitting member and the outer electrode. As a result, defective pixels can be repaired.

Abstract: Provided are a polyimide-based film having excellent visibility, a film for a cover window, and a display device including the same.

Abstract: A quantum dot including a core that includes a first semiconductor nanocrystal including zinc and selenium, and optionally sulfur and/or tellurium, and a shell that includes a second semiconductor nanocrystal including zinc, and at least one of sulfur or selenium is disclosed. The quantum dot has an average particle diameter of greater than or equal to about 13 nm, an emission peak wavelength in a range of about 440 nm to about 470 nm, and a full width at half maximum (FWHM) of an emission wavelength of less than about 25 nm. A method for preparing the quantum dot, a quantum dot-polymer composite including the quantum dot, and an electronic device including the quantum dot is also disclosed.

Abstract: A bulk-acoustic wave (BAW) resonator includes a central portion in which a first electrode, a piezoelectric layer, and a second electrode are sequentially stacked on a substrate, and an extension portion extending externally from the central portion, and an insertion layer and a loss prevention film are disposed in the extension portion between the substrate and the second electrode. The loss prevention film is formed to have a thickness of 50 ? to 500 ?. The insertion layer is stacked on the loss prevention film, and has a side surface opposing the central portion, the side surface is formed as a first inclined surface having a first inclination angle. The loss prevention film has a side surface opposing the central portion, the side surface is formed as a second inclined surface having a second inclination angle. The second inclination angle is formed to be greater than the first inclination angle.

Abstract: A quantum dot light-emitting device including first electrode and a second electrode, a quantum dot layer between the first electrode and the second electrode, a first electron transport layer and a second electron layer disposed between the quantum dot layer and the second electrode. The second electron transport layer is disposed between the quantum dot layer and the first electron transport layer, wherein each of the first electron transport layer and the second electron transport layer includes an inorganic material. A lowest unoccupied molecular orbital energy level of the second electron transport layer is shallower than a lowest unoccupied molecular orbital energy level of the first electron transport layer, and a lowest unoccupied molecular orbital energy level of the quantum dot layer is shallower than a lowest unoccupied molecular orbital energy level of the second electron transport layer. An electronic device including the quantum dot light-emitting device.

Abstract: The present disclosure provides a display device and a method for fabricating the same. According to one or more embodiments, a display device includes a substrate, pixel electrodes above the substrate, light-emitting elements above the pixel electrodes, extending in a thickness direction of the substrate, and having a polyhedral shape in the thickness direction, a width of a middle portion of the polyhedral shape being greater than a width of an upper portion of the polyhedral shape and greater than a width of a lower portion of the polyhedral shape, and a common electrode above the light-emitting elements.

Abstract: The present invention relates to a semiconductor device with an epitaxially grown titanium silicide layer having a phase of C49 and a method for fabricating the same. This titanium silicide layer has a predetermined interfacial energy that does not transform the phase of the titanium layer, and thus, occurrences of agglomeration of the titanium layer and a grooving phenomenon can be prevented. The semiconductor device includes: a silicon layer; an insulation layer formed on the silicon layer, wherein a partial portion of the insulation layer is opened to form a contact hole exposing a partial portion of the silicon layer; an epitaxially grown titanium silicide layer having a phase of C49 and formed on the exposed silicon substrate disposed within the contact hole; and a metal layer formed on an upper surface of the titanium silicide layer.

Abstract: Disclosed herein is a separate learning system and method using a two-layered neural network having target values for hidden nodes. The separate learning system of the present invention includes an input layer for receiving training data from a user, and including at least one input node. A hidden layer includes at least one hidden node. A first connection weight unit connects the input layer to the hidden layer, and changes a weight between the input node and the hidden node. An output layer outputs training data that has been completely learned. The second connection weight unit connects the hidden layer to the output layer, changing a weight between the output and the hidden node, and calculates a target value for the hidden node, based on a current error for the output node.

Abstract: Disclosed herein is a separate learning system and method using a two-layered neural network having target values for hidden nodes. The separate learning system of the present invention includes an input layer for receiving training data from a user, and including at least one input node. A hidden layer includes at least one hidden node. A first connection weight unit connects the input layer to the hidden layer, and changes a weight between the input node and the hidden node. An output layer outputs training data that has been completely learned. The second connection weight unit connects the hidden layer to the output layer, changing a weight between the output and the hidden node, and calculates a target value for the hidden node, based on a current error for the output node.

Abstract: The present invention relates to a semiconductor device with an epitaxially grown titanium silicide layer having a phase of C49 and a method for fabricating the same. This titanium silicide layer has a predetermined interfacial energy that does not transform the phase of the titanium layer, and thus, occurrences of agglomeration of the titanium layer and a grooving phenomenon can be prevented. The semiconductor device includes: a silicon layer; an insulation layer formed on the silicon layer, wherein a partial portion of the insulation layer is opened to form a contact hole exposing a partial portion of the silicon layer; an epitaxially grown titanium silicide layer having a phase of C49 and formed on the exposed silicon substrate disposed within the contact hole; and a metal layer formed on an upper surface of the titanium silicide layer.

Abstract: The present invention relates to a semiconductor device with an epitaxially grown titanium silicide layer having a phase of C49 and a method for fabricating the same. This titanium silicide layer has a predetermined interfacial energy that does not transform the phase of the titanium layer, and thus, occurrences of agglomeration of the titanium layer and a grooving phenomenon can be prevented. The semiconductor device includes: a silicon layer; an insulation layer formed on the silicon layer, wherein a partial portion of the insulation layer is opened to form a contact hole exposing a partial portion of the silicon layer; an epitaxially grown titanium silicide layer having a phase of C49 and formed on the exposed silicon substrate disposed within the contact hole; and a metal layer formed on an upper surface of the titanium silicide layer.

Abstract: Disclosed herein is a separate learning system and method using a two-layered neural network having target values for hidden nodes. The separate learning system of the present invention includes an input layer for receiving training data from a user, and including at least one input node. A hidden layer includes at least one hidden node. A first connection weight unit connects the input layer to the hidden layer, and changes a weight between the input node and the hidden node. An output layer outputs training data that has been completely learned. The second connection weight unit connects the hidden layer to the output layer, changing a weight between the output and the hidden node, and calculates a target value for the hidden node, based on a current error for the output node.

Abstract: The present invention relates to a semiconductor device with an epitaxially grown titanium silicide layer having a phase of C49 and a method for fabricating the same. This titanium silicide layer has a predetermined interfacial energy that does not transform the phase of the titanium layer, and thus, occurrences of agglomeration of the titanium layer and a grooving phenomenon can be prevented. The semiconductor device includes: a silicon layer; an insulation layer formed on the silicon layer, wherein a partial portion of the insulation layer is opened to form a contact hole exposing a partial portion of the silicon layer; an epitaxially grown titanium silicide layer having a phase of C49 and formed on the exposed silicon substrate disposed within the contact hole; and a metal layer formed on an upper surface of the titanium silicide layer.

Abstract: A semiconductor device with an epitaxially grown titanium silicide layer having a phase of C49 and a method for fabricating the same. The titanium silicide layer has a predetermined interfacial energy that does not transform the phase of the titanium layer, and thus, occurrences of agglomeration of the titanium layer and a grooving phenomenon can be prevented. The semiconductor device includes: a silicon layer; an insulation layer formed on the silicon layer, wherein a partial portion of the insulation layer is opened to form a contact hole exposing a partial portion of the silicon layer. An epitaxially grown titanium silicide layer having a phase of C49 and is formed on the exposed silicon substrate disposed within the contact hole; and a metal layer is formed on an upper surface of the titanium silicide layer.

Abstract: A semiconductor device with an epitaxially grown titanium silicide layer having a phase of C49 and a method for fabricating the same. The titanium silicide layer has a predetermined interfacial energy that does not transform the phase of the titanium layer, and thus, occurrences of agglomeration of the titanium layer and a grooving phenomenon can be prevented. The semiconductor device includes: a silicon layer; an insulation layer formed on the silicon layer, wherein a partial portion of the insulation layer is opened to form a contact hole exposing a partial portion of the silicon layer. An epitaxially grown titanium silicide layer having a phase of C49 and is formed on the exposed silicon substrate disposed within the contact hole; and a metal layer is formed on an upper surface of the titanium silicide layer.