Abstract: A color filter array includes a plurality of white filters, a plurality of yellow filters, a plurality of cyan filters and a plurality of green filters. The plurality of white filters transmits incident light. The plurality of yellow filters transmits a green component and a red component of the incident light. The plurality of cyan filters transmits the green component and a blue component of the incident light. The plurality of green filters transmits the green component of the incident light. An image sensor including the color filter array has high sensitivity and high SNR by increasing transmittance of the incident light.

Abstract: Provided is an image sensor. The image sensor includes a first pixel. The image sensor may include a second pixel formed to be adjacent to the first pixel. The pixel includes a first photoelectric conversion unit formed on a semiconductor substrate and generates charges according to incident light. A first color filter formed over the first photoelectric conversion unit guides light through the first color filter to the first photoelectric conversion unit corresponding to the color filter. The image sensor includes at least one light reflection pattern formed reflecting externally-incident light to the first or second pixel corresponding to the at least one light reflection pattern.

Abstract: A pixel cell includes a substrate, an epitaxial layer, and a photo converting device in the epitaxial layer. The epitaxial layer has a doping concentration profile of embossing shape, and includes a plurality of layers that are stacked on the substrate. The photo converting device does not include a neutral region that has a constant potential in the vertical direction. Therefore, the image sensor including the pixel cell has high quantization efficiency, and a crosstalk between photo-converting devices is decreased.

Abstract: Provided are image sensors and a methods of manufacturing image sensors. The image sensors may include a substrate, a pixel array region, and a peripheral circuit region. The substrate includes a first region and a second region. The pixel array region may be formed on the first region. The peripheral circuit region may be formed on the second region. The first region may be located higher than the second region. According to the image sensor and the method of manufacturing the same, the vertical height of the pixel array region is decreased as compared to the prior art, and thus the aspect ratio at the pixel array region is minimized. As a result, condensing efficiency the image sensor may be improved.