Abstract: Disclosed is an organic electroluminescent device with lowered driving voltage, and enhanced efficiency and lifetime.

Abstract: The present invention relates to an adamantane derivative compound and an organic light-emitting diode (OLED) including the same, and more particularly, to an adamantane derivative compound capable of being used in an OLED and an OLED having excellent properties such as low voltage and high efficiency using the compound.

Abstract: A substrate processing apparatus includes a chamber having a reaction space therein, a substrate seating member disposed in the reaction space of the chamber to seat a substrate thereon, an induction heating unit to heat the substrate seating member, and at least one altitude adjusting unit to selectively adjust the altitude of the induction heating unit at the outside of the chamber according to a temperature adjusting region of the substrate seating member. Therefore, it is possible to constantly control a temperature of the substrate seating member by adjusting the distance length between the substrate seating member and the induction heating unit at the outside of the chamber.

Abstract: Disclosed is a pharmaceutical composition containing rivastigmine. Specifically, disclosed is a transepidermal drug delivery system including a rivastigmine-containing drug layer and a supporter adhered to one surface of the drug layer to support the drug layer, wherein the drug layer contains 10 to 40 parts by weight of a rubber, 20 to 80 parts by weight of a rosin ester resin and 0.1 to 10 parts by weight of an acrylic adhesive and the drug layer has a thickness of 40 ?m to 100 ?m.

Abstract: A semiconductor device manufacturing apparatus includes a chamber including a reaction space, a substrate disposing unit configured to dispose a substrate within the chamber, a first heating unit configured to optically heat the reaction space and disposed under the chamber, a second heating unit configured to heat the reaction space through resistive heating and disposed over the chamber, and a plasma generating unit configured to generate plasma in the reaction space. Since the apparatus generates the plasma using the plasma generating unit disposed over the chamber, the deposition process based on heating and the etch process based on the plasma can be simultaneously performed in one single chamber.

Abstract: Disclosed is a pharmaceutical composition containing tulobuterol. More specifically, disclosed is a transepidermal drug delivery system including a drug layer containing tulobuterol and a natural rubber-based adhesive material, and a supporter adhered to one surface of the drug layer to support the drug layer, wherein the natural rubber-based adhesive material comprises 10 to 40 parts by weight of a natural rubber, 54.5 to 85 parts by weight of a rosin ester resin and an acid value controller, and the drug layer has a thickness of 25 ?m to 75 ?m.

Abstract: A substrate processing apparatus, which is designed to prevent the wobbling of a rotational shaft rotating, is provided. The substrate includes a rotation shaft and a connecting member. A unit is disposed between the rotational shaft and the connecting member to make the rotational shaft and the connecting member close-contact each other or a unit is disposed under the rotational shaft to prevent the wobbling of the rotational shaft.

Abstract: A substrate processing apparatus includes a chamber having a reaction space therein, a substrate seating member disposed in the reaction space of the chamber to seat a substrate thereon, an induction heating unit to heat the substrate seating member, and at least one altitude adjusting unit to selectively adjust the altitude of the induction heating unit at the outside of the chamber according to a temperature adjusting region of the substrate seating member. Therefore, it is possible to constantly control a temperature of the substrate seating member by adjusting the distance length between the substrate seating member and the induction heating unit at the outside of the chamber.

Abstract: A semiconductor device manufacturing apparatus includes a chamber including a reaction space, a substrate disposing unit configured to dispose a substrate within the chamber, a first heating unit configured to optically heat the reaction space and disposed under the chamber, a second heating unit configured to heat the reaction space through resistive heating and disposed over the chamber, and a plasma generating unit configured to generate plasma in the reaction space. Since the apparatus generates the plasma using the plasma generating unit disposed over the chamber, the deposition process based on heating and the etch process based on the plasma can be simultaneously performed in one single chamber.

Abstract: A cold wall chemical vapor deposition apparatus includes: a chamber; a susceptor movable up and down in the chamber by a driving means, the susceptor including a heater and an internal electrode; a heat reflector over the susceptor, the heat reflector reflecting a heat emitted from the heater back to a wafer on the susceptor and serving as an correspondent electrode to the internal electrode; a heater control unit connected to the wafer, the heater and the driving means, the heater control unit sensing a temperature of the wafer, the susceptor moving according to the temperature; a gas supply unit supplying gases to the chamber; and a power source applying a voltage to the chamber.

Abstract: A cold wall chemical vapor deposition apparatus includes: a chamber; a susceptor movable up and down in the chamber by a driving means, the susceptor including a heater and an internal electrode; a heat reflector over the susceptor, the heat reflector reflecting a heat emitted from the heater back to a wafer on the susceptor and serving as an correspondent electrode to the internal electrode; a heater control unit connected to the wafer, the heater and the driving means, the heater control unit sensing a temperature of the wafer, the susceptor moving according to the temperature; a gas supply unit supplying gases to the chamber; and a power source applying a voltage to the chamber.

Abstract: Disclosed herein is a method for forming a silicon epitaxial layer. The method comprises the steps of cleaning the surface of a silicon substrate having dopant of predetermined concentration doped therein with mixed plasma comprising an etching gas containing fluorine and hydrogen or deuterium, and forming a silicon epitaxial layer on the cleaned surface of the silicon substrate. The doped concentration of the silicon substrate is preferably 1018 to 1021 atoms/cm3. According to the present invention, a new preliminary cleaning step is adopted, whereby a silicon epitaxial layer of good quality is formed on a highly doped silicon substrate at a low temperature of 700° C. or less.

Abstract: An apparatus for manufacturing a semiconductor device having a process chamber comprises a lower process chamber wall, a quartz dome over the lower process chamber wall, a pumping mean for making an interior of the process chamber vacuous, a bell-jar over the quartz dome, a bell-jar heater built in a side of the bell-jar, a susceptor on which a wafer is loaded, a susceptor heater built in the susceptor, and a wafer temperature compensator having a reflector plate and supporting elements, the reflector plate being spaced apart a certain distance from the wafer and having a larger area than that of the wafer, the supporting elements being connected to the wafer and supporting edges of a bottom surface of the wafer.

Abstract: A cold wall chemical vapor deposition apparatus includes: a chamber; a susceptor movable up and down in the chamber by a driving means, the susceptor including a heater and an internal electrode; a heat reflector over the susceptor, the heat reflector reflecting a heat emitted from the heater back to a wafer on the susceptor and serving as an correspondent electrode to the internal electrode; a heater control unit connected to the wafer, the heater and the driving means, the heater control unit sensing a temperature of the wafer, the susceptor moving according to the temperature; a gas supply unit supplying gases to the chamber; and a power source applying a voltage to the chamber.