Patents by Inventor Tae-Won Ha

Tae-Won Ha has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200303547
    Abstract: A semiconductor device includes a substrate including a first active region, a second active region and a field region between the first and second active regions, and a gate structure formed on the substrate to cross the first active region, the second active region and the field region. The gate structure includes a p type metal gate electrode and an n-type metal gate electrode directly contacting each other, the p-type metal gate electrode extends from the first active region less than half way toward the second active region.
    Type: Application
    Filed: June 8, 2020
    Publication date: September 24, 2020
    Inventors: Ju-Youn Kim, Hyung-Soon Jang, Jong-Mil Youn, Tae-Won Ha
  • Patent number: 10778134
    Abstract: An apparatus for controlling an inverter for driving a motor includes a processor which includes: a current processor for generating a voltage command for causing a current detection value obtained by measuring a current supplied from the inverter to the motor to follow a current command for driving the motor; a voltage modulator for generating a pulse width modulation signal for controlling on and off states of switching elements in the inverter with a predetermined switching frequency based on the voltage command; and a frequency determining processor for setting a frequency change range within which the switching frequency will be randomly changed and randomly determining the switching frequency within the frequency change range when a random pulse width modulation method is applied to control of the inverter.
    Type: Grant
    Filed: December 4, 2018
    Date of Patent: September 15, 2020
    Assignees: Hyundai Motor Company, Kia Motors Corporation
    Inventors: Sung Kyu Kim, Yong Jae Lee, Su Hyun Bae, Ho Joon Shin, Tae Won Ha, Joo Young Park
  • Patent number: 10714614
    Abstract: A semiconductor device includes a substrate including a first active region, a second active region and a field region between the first and second active regions, and a gate structure formed on the substrate to cross the first active region, the second active region and the field region. The gate structure includes a p type metal gate electrode and an n-type metal gate electrode directly contacting each other, the p-type metal gate electrode extends from the first active region less than half way toward the second active region.
    Type: Grant
    Filed: August 22, 2018
    Date of Patent: July 14, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Ju-Youn Kim, Hyung-Soon Jang, Jong-Mil Youn, Tae-Won Ha
  • Patent number: 10692781
    Abstract: A semiconductor device including a first fin pattern and a second fin pattern, which are in parallel in a lengthwise direction; a first trench between the first fin pattern and the second fin pattern; a field insulating film partially filling the first trench, an upper surface of the field insulating film being lower than an upper surface of the first fin pattern and an upper surface of the second fin pattern; a spacer spaced apart from the first fin pattern and the second fin pattern, the spacer being on the field insulating film and defining a second trench, the second trench including an upper portion and an lower portion; an insulating line pattern on a sidewall of the lower portion of the second trench; and a conductive pattern filling an upper portion of the second trench and being on the insulating line pattern.
    Type: Grant
    Filed: March 22, 2018
    Date of Patent: June 23, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Ju Youn Kim, Ji Hwan An, Tae Won Ha, Se Ki Hong
  • Patent number: 10630217
    Abstract: An apparatus for controlling an inverter for driving a motor including a processor which includes: a current processor configured to generate a voltage command for allowing a current detection value, generated by measuring a current provided from an inverter to a motor, to follow a current command for driving the motor; a voltage modulator configured to generate a pulse width modulation signal for controlling on and off states of a switching element within the inverter with a predetermined switching frequency based on the voltage command; and a frequency determining processor configured to randomly change the switching frequency based on driving information of the motor.
    Type: Grant
    Filed: November 21, 2018
    Date of Patent: April 21, 2020
    Assignees: Hyundai Motor Company, Kia Motors Corporation
    Inventors: Yong Jae Lee, Tae Won Ha, Su Hyun Bae, Ho Joon Shin, Sung Kyu Kim, Joo Young Park
  • Patent number: 10586397
    Abstract: An augmented reality operating system based on augmented reality software as a service (SaaS) comprises an augmented reality management system providing a pre-assigned 3D virtual image to a web browser which has transmitted a URL address in a distribution mode and in supporting creation of augmented reality content based on augmented reality software as a service in an authoring mode, providing a template for creating the augmented reality content on a web browser authorized as a manager and billing a payment according to the type of template used; a user terminal receiving the 3D virtual image from the augmented reality content management system by transmitting the URL address through an installed web browser and displaying each physical object of actual image information displayed on the web browser by augmenting the physical object with a pre-assigned virtual object of the 3D virtual image in a distribution mode; and a manager terminal accessing augmented reality software as a service of the augmented real
    Type: Grant
    Filed: August 5, 2019
    Date of Patent: March 10, 2020
    Assignee: VIRNECT INC.
    Inventors: Tae Jin Ha, Jea In Kim, Noh Young Park, Back Sun Kim, Chang Suu Ha, Kyung Won Kil
  • Patent number: 10580891
    Abstract: A semiconductor device capable of adjusting profiles of a gate electrode and a gate spacer by implanting or doping an element semiconductor material into an interlayer insulating layer may be provided. The semiconductor device may include a gate spacer on a substrate, the gate spacer defining a trench, a gate electrode filling the trench, and an interlayer insulating layer on the substrate, which surrounds the gate spacer, and at least a portion of which includes germanium.
    Type: Grant
    Filed: November 16, 2018
    Date of Patent: March 3, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sung-Soo Kim, Gi-Gwan Park, Sang-Koo Kang, Koung-Min Ryu, Jae-Hoon Lee, Tae-Won Ha
  • Publication number: 20200066050
    Abstract: An augmented reality operating system based on augmented reality software as a service (SaaS) comprises an augmented reality management system providing a pre-assigned 3D virtual image to a web browser which has transmitted a URL address in a distribution mode and in supporting creation of augmented reality content based on augmented reality software as a service in an authoring mode, providing a template for creating the augmented reality content on a web browser authorized as a manager and billing a payment according to the type of template used; a user terminal receiving the 3D virtual image from the augmented reality content management system by transmitting the URL address through an installed web browser and displaying each physical object of actual image information displayed on the web browser by augmenting the physical object with a pre-assigned virtual object of the 3D virtual image in a distribution mode; and a manager terminal accessing augmented reality software as a service of the augmented real
    Type: Application
    Filed: August 5, 2019
    Publication date: February 27, 2020
    Inventors: Tae Jin HA, Jea In KIM, Noh Young PARK, Back Sun KIM, Chang Suu HA, Kyung Won KIL
  • Patent number: 10553693
    Abstract: A semiconductor device includes a substrate having first and second active regions with a field insulating layer therebetween that contacts the first and second active regions, and a gate electrode on the substrate and traversing the first active region, the second active region, and the field insulating layer. The gate electrode includes a first portion over the first active region, a second portion over the second active region, and a third portion in contact with the first and second portions. The gate electrode includes an upper gate electrode having first through third thicknesses in the first through third portions, respectively, where the third thickness is greater than the first thickness, and smaller than the second thickness.
    Type: Grant
    Filed: April 20, 2018
    Date of Patent: February 4, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Se Ki Hong, Ju Youn Kim, Jin-Wook Kim, Tae Eung Yoon, Tae Won Ha, Jung Hoon Seo, Seul Gi Yun
  • Publication number: 20200028462
    Abstract: An apparatus for controlling an inverter for driving a motor includes a processor which includes: a current processor for generating a voltage command for causing a current detection value obtained by measuring a current supplied from the inverter to the motor to follow a current command for driving the motor; a voltage modulator for generating a pulse width modulation signal for controlling on and off states of switching elements in the inverter with a predetermined switching frequency based on the voltage command; and a frequency determining processor for setting a frequency change range within which the switching frequency will be randomly changed and randomly determining the switching frequency within the frequency change range when a random pulse width modulation method is applied to control of the inverter.
    Type: Application
    Filed: December 4, 2018
    Publication date: January 23, 2020
    Inventors: Sung Kyu Kim, Yong Jae Lee, Su Hyun Bae, Ho Joon Shin, Tae Won Ha, Joo Young Park
  • Publication number: 20200028460
    Abstract: An apparatus for controlling an inverter for driving a motor including a processor which includes: a current processor configured to generate a voltage command for allowing a current detection value, generated by measuring a current provided from an inverter to a motor, to follow a current command for driving the motor; a voltage modulator configured to generate a pulse width modulation signal for controlling on and off states of a switching element within the inverter with a predetermined switching frequency based on the voltage command; and a frequency determining processor configured to randomly change the switching frequency based on driving information of the motor.
    Type: Application
    Filed: November 21, 2018
    Publication date: January 23, 2020
    Inventors: Yong Jae LEE, Tae Won HA, Su Hyun BAE, Ho Joon SHIN, Sung Kyu KIM, Joo Young PARK
  • Patent number: 10477696
    Abstract: A fine interval coating member for a LED display and a coating method using the same are provided. The coating member includes column portions and row portions crossing the column portions, and holes between the column portions and the row portions. The body portion includes a material that is melted at a temperature higher than room temperature and that is cured at the room temperature.
    Type: Grant
    Filed: August 17, 2018
    Date of Patent: November 12, 2019
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jae-sang Kim, Jee-su Park, Jae-Min Lee, Suk Hyun, Chang-won Ryu, Tae-hyeun Ha
  • Patent number: 10393499
    Abstract: A method of determining an angle by an encoder includes generating a first angle data based on a rotation of a bipolar magnet and a second angle data based on a rotation of the multipolar magnet; determining a first waveform signal based on the first angle data and a second waveform signal based on the second angle data; converting the first waveform signal into a third waveform signal having a cycle similar to the second waveform signal; calculating an angle result value as a function of the second angle data and a determined value about a location of a rotation cycle of the multipolar magnet based on a difference between the second waveform signal and the third waveform signal; and determining an absolute angle corresponding to the calculated angle result value based on stored angle data.
    Type: Grant
    Filed: May 4, 2017
    Date of Patent: August 27, 2019
    Assignee: FASTECH CO., LTD.
    Inventors: Jae Wook Jeon, Nguyen Xuan Ha, Jae Wan Park, Jun Young Moon, Tae Won Kim, Do Eon Lee
  • Patent number: 10391558
    Abstract: The present invention provides a power manufacturing apparatus capable of preventing particle growth when fine powder is formed through a fluid, the apparatus comprising: a molten steel providing part for providing molten steel; and a cooling fluid spraying part which is arranged at a lower part of the molten steel providing part and sprays a cooling fluid on the molten steel in order to pulverize the molten steel provided by the molten steel providing part, wherein the cooling fluid spraying part forms a first flow for cooling the molten steel so as to pulverize the molten steel and a second flow for forming a descending air current in the molten steel.
    Type: Grant
    Filed: December 24, 2013
    Date of Patent: August 27, 2019
    Assignee: POSCO
    Inventors: Tae-Jong Ha, Si-Won Yoon, Hae-Kwon Jeong
  • Publication number: 20190131417
    Abstract: A semiconductor device includes a substrate having first and second active regions with a field insulating layer therebetween that contacts the first and second active regions, and a gate electrode on the substrate and traversing the first active region, the second active region, and the field insulating layer. The gate electrode includes a first portion over the first active region, a second portion over the second active region, and a third portion in contact with the first and second portions. The gate electrode includes an upper gate electrode having first through third thicknesses in the first through third portions, respectively, where the third thickness is greater than the first thickness, and smaller than the second thickness.
    Type: Application
    Filed: April 20, 2018
    Publication date: May 2, 2019
    Inventors: Se Ki HONG, Ju Youn KIM, Jin-Wook KIM, Tae Eung YOON, Tae Won HA, Jung Hoon SEO, Seul Gi YUN
  • Publication number: 20190088779
    Abstract: A semiconductor device capable of adjusting profiles of a gate electrode and a gate spacer by implanting or doping an element semiconductor material into an interlayer insulating layer may be provided. The semiconductor device may include a gate spacer on a substrate, the gate spacer defining a trench, a gate electrode filling the trench, and an interlayer insulating layer on the substrate, which surrounds the gate spacer, and at least a portion of which includes germanium.
    Type: Application
    Filed: November 16, 2018
    Publication date: March 21, 2019
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Sung-Soo KIM, Gi-Gwan PARK, Sang-Koo KANG, Koung-Min RYU, Jae-Hoon LEE, Tae-Won HA
  • Patent number: 10177253
    Abstract: A semiconductor device capable of adjusting profiles of a gate electrode and a gate spacer by implanting or doping an element semiconductor material into an interlayer insulating layer may be provided. The semiconductor device may include a gate spacer on a substrate, the gate spacer defining a trench, a gate electrode filling the trench, and an interlayer insulating layer on the substrate, which surrounds the gate spacer, and at least a portion of which includes germanium.
    Type: Grant
    Filed: October 11, 2016
    Date of Patent: January 8, 2019
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sung-Soo Kim, Gi-Gwan Park, Sang-Koo Kang, Koung-Min Ryu, Jae-Hoon Lee, Tae-Won Ha
  • Publication number: 20180366582
    Abstract: A semiconductor device includes a substrate including a first active region, a second active region and a field region between the first and second active regions, and a gate structure formed on the substrate to cross the first active region, the second active region and the field region. The gate structure includes a p type metal gate electrode and an n-type metal gate electrode directly contacting each other, the p-type metal gate electrode extends from the first active region less than half way toward the second active region.
    Type: Application
    Filed: August 22, 2018
    Publication date: December 20, 2018
    Inventors: Ju-Youn Kim, Hyung-Soon Jang, Jong-Mil Youn, Tae-Won Ha
  • Patent number: 10084088
    Abstract: A semiconductor device includes a substrate including a first active region, a second active region and a field region between the first and second active regions, and a gate structure formed on the substrate to cross the first active region, the second active region and the field region. The gate structure includes a p type metal gate electrode and an n-type metal gate electrode directly contacting each other, the p-type metal gate electrode extends from the first active region less than half way toward the second active region.
    Type: Grant
    Filed: June 9, 2017
    Date of Patent: September 25, 2018
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Ju-Youn Kim, Hyung-Soon Jang, Jong-Mil Youn, Tae-Won Ha
  • Publication number: 20180211887
    Abstract: A semiconductor device including a first fin pattern and a second fin pattern, which are in parallel in a lengthwise direction; a first trench between the first fin pattern and the second fin pattern; a field insulating film partially filling the first trench, an upper surface of the field insulating film being lower than an upper surface of the first fin pattern and an upper surface of the second fin pattern; a spacer spaced apart from the first fin pattern and the second fin pattern, the spacer being on the field insulating film and defining a second trench, the second trench including an upper portion and an lower portion; an insulating line pattern on a sidewall of the lower portion of the second trench; and a conductive pattern filling an upper portion of the second trench and being on the insulating line pattern.
    Type: Application
    Filed: March 22, 2018
    Publication date: July 26, 2018
    Inventors: Ju Youn KIM, Ji Hwan AN, Tae Won HA, Se Ki HONG