Patents by Inventor Tae Woo Kwon

Tae Woo Kwon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20080238501
    Abstract: An initialization signal generating circuit includes a voltage distributor, a first initialization signal generator, a second initialization signal, and a controller. The voltage distributor outputs a voltage signal in response to an external voltage. The first initialization signal generator outputs a first initialization signal in response to the voltage signal output from the voltage distributor. The second initialization signal generator outputs a second initialization signal in response to the voltage signal output from the voltage distributor. The controller blocks the external voltage supplied to the voltage distributor and the first and second initialization signal generators, in response to the first and second initialization signals.
    Type: Application
    Filed: December 27, 2007
    Publication date: October 2, 2008
    Inventor: Tae Woo Kwon
  • Publication number: 20070291568
    Abstract: A semiconductor memory integrated circuit for controlling a refresh operation includes: a first period generating unit that generates a first periodic signal having an uniformed period; a second period generating unit that generates a second periodic signal according to a first control signal; a period generation control unit that generates a timing signal for every predetermined period; a frequency dividing unit that divides the frequency of the first periodic signal into at least one frequency-divided periodic signals; and a period selection control unit that controls the operation of the second period generating unit according to the at least one frequency-divided periodic signals and the second periodic signal, determines temperature, and outputs one of the frequency-divided periodic signals corresponding to the determined temperature as a refresh signal.
    Type: Application
    Filed: December 29, 2006
    Publication date: December 20, 2007
    Applicant: HYNIX SEMICONDUCTOR INC.
    Inventors: Jong Yeol Yang, Tae Woo Kwon
  • Patent number: 7075853
    Abstract: A semiconductor memory device including an internal clock doubler including an internal clock doubler for doubling an external clock signal in a read mode to output a double clock signal in response to a plurality of external control signals, and delaying the external clock signal to output a clock control signal; a sense amplifier control signal generator for receiving the clock control signal and a standby signal of the plurality of external control signals signals which represents an output state of data to generate a plurality of sense amplifier control signals for controlling output of output data of a sense amplifier; a sense amplifier output unit for outputting output data of the sense amplifier in response to the plurality of sense amplifier control signals; and an output buffer unit for outputting output data of the sense amplifier synchronously with respect to the double clock signal in response to the standby signal when data are outputted.
    Type: Grant
    Filed: June 30, 2004
    Date of Patent: July 11, 2006
    Assignee: Hynix Semiconductor Inc.
    Inventors: Duk Ju Jeong, Tae Woo Kwon
  • Patent number: 7057952
    Abstract: A precharge control circuit of a pseudo SRAM including a precharge set signal generation unit configured to output a precharge set signal, a precharge standby signal generation unit configured to output a precharge standby signal, a precharge signal output unit configured to output a precharge signal in response to the precharge set signal and the precharge standby signal, a first precharge control unit configured to forcedly control the output signal of the precharge standby signal generation unit such that the precharge signal is generated in a period where a chip select signal is disabled, in the case where the chip select signal is disabled long for a first time, and a second precharge control unit configured to forcedly control the output signal of the precharge standby signal generation unit such that the precharge signal is generated in a period where the chip select signal is disabled, in the case where the chip select signal is disabled long for a second time longer than the first time, wherein the p
    Type: Grant
    Filed: May 17, 2005
    Date of Patent: June 6, 2006
    Assignee: Hynix Semiconductor Inc.
    Inventors: Yin Jae Lee, Tae Woo Kwon
  • Patent number: 7009898
    Abstract: A PSRAM performs a Write-Verify-Read function at a test mode, thereby easily analyzing defects. The PSRAM comprises a test mode decoder, a refresh control block and a precharge control block. The test mode decoder generates a test mode control signal for performing a WVR function when a test mode starts. The refresh control block selectively performs a refresh operation in response to the test mode control signal. The precharge control block selectively performs a precharge operation in response to the test mode control signal outputted from the test mode decoder. Here, the test mode control signal is activated at the test mode so that the refresh operation and the precharge operation are not performed.
    Type: Grant
    Filed: June 28, 2004
    Date of Patent: March 7, 2006
    Assignee: Hynix Semiconductor Inc.
    Inventors: Sang Kwon Lee, Tae Woo Kwon
  • Patent number: 6771098
    Abstract: Disclosed is a data output buffer having a preset structure. The data output buffer comprises a plurality of groups, each group having two data output buffers, a preset driver for precharging or discharging any one output of two output buffers in each group, a control circuit for generating a control signal to drive the preset driver when outputs of the two output buffers in each group are same, and a set circuit connected between the outputs of the two data output buffers in each group, for making the outputs of the two data output buffer in each group the same level. Therefore, a data output speed of the data output buffer could be improved and the peak current could be also reduced.
    Type: Grant
    Filed: July 9, 2003
    Date of Patent: August 3, 2004
    Assignee: Hynix Semiconductor Inc.
    Inventor: Tae Woo Kwon
  • Publication number: 20040113664
    Abstract: Disclosed is a data output buffer having a preset structure. The data output buffer comprises a plurality of groups, each group having two data output buffers, a preset driver for precharging or discharging any one output of two output buffers in each group, a control circuit for generating a control signal to drive the preset driver when outputs of the two output buffers in each group are same, and a set circuit connected between the outputs of the two data output buffers in each group, for making the outputs of the two data output buffer in each group the same level. Therefore, a data output speed of the data output buffer could be improved and the peak current could be also reduced.
    Type: Application
    Filed: July 9, 2003
    Publication date: June 17, 2004
    Inventor: Tae Woo Kwon
  • Patent number: 5789282
    Abstract: A method for fabricating a thin film transistor, comprising the steps of: forming a gate electrode; forming a doped polysilicon film for source/drain at the side wall of the gate electrode, to insulate the gate electrode; forming a gate insulating film; forming an amorphous polysilicon film over the resulting structure; and forming a source/drain region by diffusing the dopants of the doped polysilicon film into the amorphous silicon film, whereby it is possible to form the source/drain region and drain offset structure of a thin film transistor without formation of a source/drain mask and ion implantation and thus, thereby simplifying the overall procedure.
    Type: Grant
    Filed: October 28, 1996
    Date of Patent: August 4, 1998
    Assignee: Hyundai Electronics Industries Co., Ltd.
    Inventors: Sung Wook Yin, Tae Woo Kwon