Abstract: A pore-filled ion exchange polyelectrolyte composite membrane from which the surface ion exchange polyelectrolyte has been removed and a method of manufacturing the same are provided. The ion exchange polyelectrolyte composite membrane exhibits low film resistance and low in-plane-direction swelling degree, and has a smaller film-thickness than a commercial film, and thus, can be used for various purposes. In addition, since the pore-filled ion exchange polyelectrolyte composite membrane is continuously manufactured through a roll-to-roll process, the manufacturing process is simple, and manufacturing costs can be greatly reduced.

Abstract: An optical imaging system includes a first lens group having negative refractive power, a second lens group having positive refractive power, and a third lens group having negative refractive power, wherein the second lens group and the third lens group are configured to move in an optical axis direction to adjust a focal length and magnification, and the following conditional expression is satisfied, FNOt?3.6, where FNOt is an F value at a telephoto end of the optical imaging system.

Abstract: An optical imaging system includes: a first lens group including a plurality of lenses; a second lens group including a plurality of lenses; a first reflecting member disposed on an object side of the first lens group; and a plurality of second reflecting members arranged between the second lens group and an image sensor. One or both of the first lens group and the second lens group is movable along an optical axis, an interval along the optical axis between the first lens group and the second lens group is varied between a first interval and a second interval smaller than the first interval, and as at least one of the first lens group and the second lens group is moved, one or more of the second reflecting members are moved.

Abstract: A surface treatment method for a semiconductor device includes providing a substrate where a plurality of projected patterns are formed, forming a hydrophobic coating layer on a surface of each of the plurality of projected patterns, rinsing the substrate with deionized water, and drying the substrate, wherein the hydrophobic coating layer is formed using a coating agent that includes phosphate having more than one hydrocarbon group, phosphonate having more than one hydrocarbon group, or a mixture thereof.

Abstract: A surface treatment method for a semiconductor device includes providing a substrate where a plurality of projected patterns are formed, forming a hydrophobic coating layer on a surface of each of the plurality of projected patterns, rinsing the substrate with deionized water, and drying the substrate, wherein the hydrophobic coating layer is formed using a coating agent that includes phosphate having more than one hydrocarbon group, phosphonate having more than one hydrocarbon group, or a mixture thereof.

Abstract: A surface treatment method for a semiconductor device includes providing a substrate where a plurality of projected patterns are formed, forming a hydrophobic coating layer on a surface of each of the plurality of projected patterns, rinsing the substrate with deionized water, and drying the substrate, wherein the hydrophobic coating layer is formed using a coating agent that includes phosphate having more than one hydrocarbon group, phosphonate having more than one hydrocarbon group, or a mixture thereof.