Patents by Inventor Tae Yong Chung

Tae Yong Chung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7598571
    Abstract: A method of manufacturing a semiconductor device which can prevent leakage current caused by gate electrodes intersecting element isolation layers in a major axis of an active region, and which further has vertical channels to provide a sufficient overlap margin, and a semiconductor device manufactured using the above method. The device includes gate electrodes formed on element isolation layers that are disposed between active regions and have top surfaces that are higher than the top surfaces of the active regions. Since the gate electrodes are formed on the element isolation layers, leakage current in a semiconductor substrate is prevented. In addition, the gate electrodes are formed using a striped shape mask pattern, thereby obtaining a sufficient overlap margin compared to a contact shape or bar shape pattern.
    Type: Grant
    Filed: July 14, 2006
    Date of Patent: October 6, 2009
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Yong-Sung Kim, Tae-Yong Chung, Soo-Ho Shin
  • Patent number: D263894
    Type: Grant
    Filed: January 28, 1980
    Date of Patent: April 20, 1982
    Inventor: Tae Yong Chung