Abstract: A base for a motor, the base including: a base body formed by performing press processing on a steel plate, a base material; an outer wall part defining an outer edge of the base body and formed by being bent from an end portion of the base body; and at least one weight reducing part formed by removing a predetermined region of the outer wall part.

Abstract: Provided is a precursor composition for an oxide semiconductor. The precursor composition for the oxide semiconductor includes a metal complex compound formed by a metal ion and an organic ligand, wherein the precursor composition is represented by the following Formula 1. MAn ??(Formula 1) Herein, M is a metal ion, A is an organic ligand which includes ?-substituted carboxylate, and n is a natural number.

Abstract: There is provided a stator assembly for a motor including: a base for a motor fabricated with a steel sheet; a core installation part installed on the base for a motor; and a stator core fixed to the core installation part, wherein the core installation part includes a guide portion guiding an insertion of the stator core and a mounting portion on which the stator core is mounted.

Abstract: Embodiments provide a light emitting module including a body, a plurality of light emitting devices disposed on the body, and a turn-on controller configured to control turn-on of the plurality of light emitting devices. At least some neighboring light emitting devices among the plurality of light emitting devices are spaced apart from one another by different distances.

Abstract: Disclosed is an apparatus for testing an LED lamp which includes: a secured seat on which the LED lamp is seated; an up and down shifter which, when the LED lamp is seated on the secured seat, shifts from an initial position spaced upward from the LED lamp to a measurement position in which the up and down shifter contacts with a socket of the LED lamp, and which supplies electric power to the LED lamp when the up and down shifter is placed in the measurement position, and a sensor sensing that the up and down shifter is placed in the measurement position; and a quality determining means determining a quality of the LED lamp based on light emitted from the LED lamp, and comprising an illuminometer or a luminance meter.

Abstract: A lighting device may be provided that includes: a heat sink which includes a base and a member extending from the base; a light source module which is disposed on a lateral surface of the member; and a reflector which is disposed on the member and has a disposition recess exposing the light source module, wherein the at least two light source modules are provided and the light source module includes a terminal plate which electrically connects the at least two light source modules, and wherein the terminal plate is disposed on the reflector.

Abstract: Disclosed is a method for operating a test apparatus for an LED lamp. The method includes: forming a self-holding circuit by switching on a first switching means such that an up and down shifter provided in the test apparatus for the LED lamp moves down; moving down and stopping the up and down shifter from a determined initial position to a measurement position; measuring the quality of the LED lamp equipped with the test apparatus for the LED lamp; releasing the self-holding circuit by switching on the second switching means such that the up and down shifter moves up; and moving up and down shifter from the measurement position to the determined initial position.

Abstract: A display substrate includes a base substrate, a data line, a gate line, a switching element, a self assembled monolayer (SAM) and a pixel electrode. The data line is formed on the base substrate. The gate line is formed across the data line. The switching element includes a source electrode electrically connected to the data line, a drain electrode spaced apart from the source electrode, a semiconductor pattern covering the source and drain electrodes, and a gate electrode electrically connected to the gate line and facing the semiconductor pattern. The SAM is disposed around the semiconductor pattern and a conductive pattern including the data line. The pixel electrode is electrically connected to the switching element.

Abstract: The lighting device includes: a light emitting module including a substrate and a light emitting device disposed on the substrate; a member disposed on the light emitting module, the member including: a base having a hole configured to receive the light emitting device; a projection configured to reflect light from the light emitting device; and a predetermined inclined surface coupled to an outer circumference of the base, a cover surrounding the light emitting module and the member; and a heat sink including a flat surface on which the light emitting module is disposed, and coupled to the cover.

Abstract: Disclosed herein is a base for a hard disk drive, including: a base plate; and a double bent part doubly bent from an outer edge of the base plate, wherein a thickness of a plate material forming the double bent part is thinner than that of a plate material forming the base plate. The plate material of the base plate including a central portion of the base and the plate material of the double bent part formed at an outer side of the base have a relative difference in a thickness therebetween, thereby making it possible to secure rigidity at both of the central portion of the base and the outer side of the base.

Abstract: A thin-film transistor substrate includes a gate line, and a gate electrode connected to the gate line, on a base substrate; an insulating layer on the gate electrode, the insulating layer including a first part and a second part, the first part having a hydrophobic property and the second part having a hydrophilic property; a data line extended in a different direction from the gate line, and a source electrode connected to the data line and on the second part of the insulating layer; a drain electrode on the second part of the insulating layer, the drain electrode spaced apart from the source electrode; a semi-conductor pattern overlapping the source electrode, the drain electrode and a gap between the spaced apart source and drain electrodes, where the semi-conductor pattern exposes the first part of the insulating layer; and a pixel electrode in contact with the drain electrode.

Abstract: A thin film transistor includes a substrate, an oxide semiconductor layer that is disposed on the substrate, a gate electrode that overlaps with the oxide semiconductor layer, a gate insulating layer that is disposed between the oxide semiconductor layer and the gate electrode, and a source electrode and a drain electrode that at least partially overlap with the oxide semiconductor layer and are spaced from each other. The gate insulating layer includes an oxide including a first material. The oxide semiconductor layer includes an oxide which includes a same material as the first material and a second material, and the source electrode and the drain electrode include an oxide that includes a same material as the second material and a third material, and a grain boundary is not formed on an interface between at least one of the gate insulating layer and the oxide semiconductor layer or between the oxide semiconductor layer, and the source electrode and the drain electrode.

Abstract: There are provided a base structure for a device such as a hard disk drive and a hard disk drive having the same. The base structure includes: a base body including components mounted thereon and made of a non-aluminum material; and a base reinforcing part attached to the base body as an additional piece. More specifically, the base body is provided by press-molding a steel sheet and the base reinforcing part is provided by press-molding a steel sheet or is provided as a reinforcing plate separately attached to an outer surface of the base body, and the base structure further includes a reinforcing part processing member additionally provided in the reinforcing plate. The base structure for a device such as a hard disk drive and the like, in which the rigidity thereof is secured or the weight thereof is reduced by using various base reinforcing parts and reinforcing part processing members while the manufacturing costs of the base structure are reduced.

Abstract: A lighting device may be provided that includes: a heat sink which includes a base and a member extending from the base; a light source module which is disposed on a lateral surface of the member; and a reflector which is disposed on the member and has a disposition recess exposing the light source module, wherein the at least two light source modules are provided and the light source module includes a terminal plate which electrically connects the at least two light source modules, and wherein the terminal plate is disposed on the reflector.

Abstract: A base for a motor, the base including: a base body formed by performing press processing on a steel plate, a base material; an outer wall part defining an outer edge of the base body and formed by being bent from an end portion of the base body; and at least one weight reducing part formed by removing a predetermined region of the outer wall part.

Abstract: The present invention relates to a sintered bearing and a preparation method thereof, wherein the method comprises: a step for forming a mixed powder by mixing metal powder, kish graphite, and lubricant; forming a molded body by applying pressure to the mixed powder; forming a sintered body by sintering the molded body; and impregnating the sintered body in oil. The invention is prepared by adding 0.01-10 parts by weight of kish graphite to metal powder and thus provides excellent abrasion resistance, strength, and self lubricity.

Abstract: A thin film transistor includes a source electrode, a drain electrode, a channel portion disposed between the source electrode and the drain electrode, and a gate electrode disposed on the channel portion and insulated from the channel portion. The source electrode, the drain electrode, and the channel portion are disposed on a same layer. A display apparatus includes a display device and the thin film transistor that applies a driving signal to the display device.

Abstract: A method of manufacturing a thin-film transistor substrate includes: applying a composition on a substrate to form a thin-film on the substrate, heating the thin-film, and patterning the thin-film to form an oxide semiconductor pattern. The composition includes a metal nitrate and water. The potential of hydrogen (pH) of the composition is about 1 to about 4.

Abstract: In a method of manufacturing a thin film transistor, a gate electrode is formed on a first surface of a base substrate, a oxide semiconductor layer, insulation layer and photo resist layer are formed an the fast surface of the base substrate having the gate electrode. The insulation layer and the oxide semiconductor layer are patterned using a first photo resist pattern to form an etch-stopper and an active pattern. A source and a drain electrode are formed on the base substrate having the active pattern and the etch-stopper, the source electrode and the drain electrode are overlapped with both ends of the etch-stopper and spaced apart from each other. Therefore, a manufacturing cost may be decreased by omitting a mask when forming the active pattern and the etch-stopper.

Abstract: A thin film transistor array panel according to an exemplary embodiment of the present invention includes: a gate electrode disposed on an insulation substrate; a gate insulating layer disposed on the gate electrode; a semiconductor disposed on the gate insulating layer; an etching stop layer disposed on the semiconductor; an insulating layer disposed on the gate insulating layer; and a source electrode and a drain electrode overlapping the semiconductor. The semiconductor and the gate insulating layer have a first portion on which the etching stop layer and the insulating layer are disposed, and a second portion on which etching stop layer and the insulating layer are not disposed. The source electrode and the drain electrode are disposed on the second portion of the semiconductor and the gate insulating layer.