Abstract: A semiconductor memory device includes: a substrate including a cell area, a peripheral area, and a boundary area; a storage pad connected to an active area in the cell area; a capacitor including a lower electrode, a first electrode support layer supporting the lower electrode, a capacitor dielectric, and an upper electrode; a peripheral gate on the peripheral area of the substrate; first peripheral contact plugs on both sides of the peripheral gate and connected to the substrate; a first interlayer insulating layer on the storage pad and the first peripheral contact plugs; a second interlayer insulating layer on the first interlayer insulating layer; and a first insulating layer on the second interlayer insulating layer, wherein the first insulating layer extends on the boundary area of the substrate, and a height of the first insulating layer is equal to or less than a height of the first electrode support layer.

Abstract: A semiconductor memory device includes a substrate including cell and peripheral areas, a first interlayer insulating film on the substrate, a first capping film on the first interlayer insulating film, a cell gate structure in the cell area, a first bit-line structure on the cell area, a peripheral gate structure on the peripheral area, and a peripheral contact plug disposed at the peripheral area and extending through the first capping film and the first interlayer insulating film. The first capping film includes a first portion overlapping an upper surface of the peripheral gate structure and a second portion adjacent to a sidewall of the peripheral contact plug. An upper surface of the first portion is lower than an upper surface of the second portion. A width of the first plug portion is equal to a width of the second plug portion.

Abstract: The present invention relates to a precursor for forming a thin film. The precursor is in a liquid state under conditions of 20° C. and 1 bar and includes 20 to 100% by weight of a coordination compound represented by Chemical Formula 1 below and 0 to 80% by weight of an alkyl cyanide containing an alkyl group having 1 to 15 carbon atoms: [Chemical Formula 1] MXnLmYz. M is niobium, tungsten, or molybdenum; X is a halogen element; n is 1 to 6; L is an alkyl cyanide containing an alkyl group having 1 to 15 carbon atoms, or a linear or cyclic saturated hydrocarbon having 3 to 15 carbon atoms and substituted with one or more nitrogen, oxygen, phosphorus, or sulfur atoms; m is 1 to 3; bonded Y is an amine; z is an integer from 0 to 4; and n+z is 3 to 6.

Abstract: A purge module which can provide a conventional load port without a gas purging function with the gas purging function, and a load port having the purge module are disclosed. The purge module comprises a jig, a gas control box and pipes. The jig is detachably attached to an upper side of a stage of a load port. The jig comprises a gas inlet for providing a wafer carrier with gas and a gas outlet for receiving gas from the wafer carrier. The gas control box is detachably attached to the load port to control gas flow. The pipes connect the jig and the gas control box.

Abstract: A purge module which can provide a conventional load port without a gas purging function with the gas purging function, and a load port having the purge module are disclosed. The purge module comprises a jig, a gas control box and pipes. The jig is detachably attached to an upper side of a stage of a load port. The jig comprises a gas inlet for providing a wafer carrier with gas and a gas outlet for receiving gas from the wafer carrier. The gas control box is detachably attached to the load port to control gas flow. The pipes connect the jig and the gas control box.