Abstract: The present invention relates to a precursor for forming a thin film. The precursor is in a liquid state under conditions of 20° C. and 1 bar and includes 20 to 100% by weight of a coordination compound represented by Chemical Formula 1 below and 0 to 80% by weight of an alkyl cyanide containing an alkyl group having 1 to 15 carbon atoms: [Chemical Formula 1] MXnLmYz. M is niobium, tungsten, or molybdenum; X is a halogen element; n is 1 to 6; L is an alkyl cyanide containing an alkyl group having 1 to 15 carbon atoms, or a linear or cyclic saturated hydrocarbon having 3 to 15 carbon atoms and substituted with one or more nitrogen, oxygen, phosphorus, or sulfur atoms; m is 1 to 3; bonded Y is an amine; z is an integer from 0 to 4; and n+z is 3 to 6.

Abstract: A purge module which can provide a conventional load port without a gas purging function with the gas purging function, and a load port having the purge module are disclosed. The purge module comprises a jig, a gas control box and pipes. The jig is detachably attached to an upper side of a stage of a load port. The jig comprises a gas inlet for providing a wafer carrier with gas and a gas outlet for receiving gas from the wafer carrier. The gas control box is detachably attached to the load port to control gas flow. The pipes connect the jig and the gas control box.

Abstract: A purge module which can provide a conventional load port without a gas purging function with the gas purging function, and a load port having the purge module are disclosed. The purge module comprises a jig, a gas control box and pipes. The jig is detachably attached to an upper side of a stage of a load port. The jig comprises a gas inlet for providing a wafer carrier with gas and a gas outlet for receiving gas from the wafer carrier. The gas control box is detachably attached to the load port to control gas flow. The pipes connect the jig and the gas control box.