Abstract: The present disclosure relates to a novel antibody-drug conjugate (ADC) targeting claudin 18 isoform 2 (CLDN18.2), an active metabolite of the ADC, a method of producing the ADC, use of the ADC for the treatment and/or prevention of diseases, and use of the ADC for producing a drug for the treatment and/or prevention of diseases, more specifically hyperproliferative and/or angiogenic diseases, for example, cancer, and more particularly, to an antibody-drug conjugate including a novel antibody or antigen-binding fragment thereof that binds to CLDN18.2, and a pharmaceutical composition including the same.

Abstract: A vehicle body structure includes: a roof side assembly connecting upper ends of pillars of a vehicle body along the forward/backward direction of the vehicle body, the roof side assembly constituting an A-pillar of the vehicle body; and an outer garnish coupled to the outside of the roof side assembly, wherein the roof side assembly includes: a pipe having a closed cross-section shape and elongated in the forward/backward direction of the vehicle body so as to form a closed section; an upper reinforcement member coupled to the upper side of the pipe and elongated in the forward/backward direction of the vehicle body; a lower reinforcement member coupled to the lower side of the pipe and elongated in the forward/backward direction of the vehicle body; and an inner reinforcement member coupled to the vehicle body inner side of the pipe and elongated in the forward/backward direction of the vehicle body.

Abstract: An integrated circuit may include a first active region and a second active region, and the first and second active regions may extend on a substrate in a first horizontal direction in parallel to each other and have different conductivity types from each other. A first gate line may extend in a second horizontal direction crossing the first horizontal direction, and may form a first transistor with the first active region. The first transistor may include a gate to which a first input signal is applied. The first gate line may include a first partial gate line that overlaps the first active region in a perpendicular direction and that has an end on a region between the first and second active regions.

Abstract: The present disclosure relates to an isolated anti-FcRN antibody, which is an antibody binding to FcRN (stands for neonatal Fc receptor, also called FcRP, FcRB or Brambell receptor) that is a receptor with a high affinity for IgG or a fragment thereof, a method of preparing thereof, a composition for treating autoimmune disease, which comprises the antibody, and a method of treating and diagnosing autoimmunre diseases using the antibody. The FcRn-specific antibody according to the present disclosure binds to FcRn non-competitively with IgG to reduce serum pathogenic auto-antibody levels, and thus can be used for the treatment of autoimmune diseases.

Abstract: A display device includes: a substrate including a first emission area, a second emission area, and a third emission area; a first wavelength conversion pattern overlapping the first emission area; a second wavelength conversion pattern overlapping the second emission area; and a light-transmitting pattern overlapping the third emission area, wherein the first wavelength conversion pattern includes first wavelength shifters configured to convert a first light into a second light, and first scatterers, the second wavelength conversion pattern includes second wavelength shifters configured to convert the first light into a third light, and second scatterers, and a ratio between a concentration of the first wavelength shifters and a concentration of the second wavelength shifters is 1:1.1 to 1:1.3.

Abstract: An image sensor substrate includes a semiconductor substrate layer and a semiconductor epitaxial layer on the substrate layer. The semiconductor substrate layer has a boron (B) doping concentration therein in a range from 3×1018 cm?3 to 1×1019 cm?3, whereas the semiconductor epitaxial layer has a boron (B) doping concentration therein in a range from 1×1016 cm?3 to 6×1016 cm?3.

Abstract: A manufacturing method of a display device according to an embodiment includes forming a bank separating a first opening, a second opening, and a third opening on a first substrate, forming a scatterer layer in the first opening, the second opening, and the third opening, forming a first ink layer in the first opening, forming a second ink layer in the second opening, and forming a third ink layer in the third opening.

Abstract: A method of manufacturing an image sensing apparatus includes: forming a first substrate structure including a first region of a pixel region, the first substrate structure having a first surface and a second surface; forming a second substrate structure including a circuit region for driving the pixel region, the second substrate structure having a third surface and a fourth surface; bonding the first substrate structure to the second substrate structure, such that the first surface is connected to the third surface; forming a second region of the pixel region on the second surface; forming a first connection via, the first connection via extending from the second surface to pass through the first substrate structure; mounting semiconductor chips on the fourth surface, using a conductive bump; and separating a stack structure of the first substrate structure, the second substrate structure, and the semiconductor chips into unit image sensing apparatuses.

Abstract: An ink composition includes a plurality of quantum dots, a liquid monomer, an initiator, and optionally an organic solvent, wherein the plurality of quantum dots includes: a first quantum dot including a first ligand, and a second quantum dot including a second ligand different from the first ligand, and the ink composition is configured to emit a first light.

Abstract: An image sensing apparatus includes a first substrate structure, a second substrate structure, and a memory chip. The first substrate structure includes a pixel region having a photoelectric conversion element. The second substrate structure includes a first surface connected to the first substrate structure and a second surface opposite the first surface, and also includes a circuit region to drive the pixel region. The memory chip is mounted on the second surface of the second substrate structure. The first substrate structure and the second substrate structure are electrically connected by first connection vias passing through the first substrate structure. The second substrate structure and the memory chip are electrically connected by second connection vias passing through a portion of the second substrate structure. The first connection vias and the second connection vias are at different positions on a plane.

Abstract: A method of manufacturing an image sensing apparatus includes: forming a first substrate structure including a first region of a pixel region, the first substrate structure having a first surface and a second surface; forming a second substrate structure including a circuit region for driving the pixel region, the second substrate structure having a third surface and a fourth surface; bonding the first substrate structure to the second substrate structure, such that the first surface is connected to the third surface; forming a second region of the pixel region on the second surface; forming a first connection via, the first connection via extending from the second surface to pass through the first substrate structure; mounting semiconductor chips on the fourth surface, using a conductive bump; and separating a stack structure of the first substrate structure, the second substrate structure, and the semiconductor chips into unit image sensing apparatuses.

Abstract: A method of manufacturing an image sensing apparatus includes: forming a first substrate structure including a first region of a pixel region, the first substrate structure having a first surface and a second surface; forming a second substrate structure including a circuit region for driving the pixel region, the second substrate structure having a third surface and a fourth surface; bonding the first substrate structure to the second substrate structure, such that the first surface is connected to the third surface; forming a second region of the pixel region on the second surface; forming a first connection via, the first connection via extending from the second surface to pass through the first substrate structure; mounting semiconductor chips on the fourth surface, using a conductive bump; and separating a stack structure of the first substrate structure, the second substrate structure, and the semiconductor chips into unit image sensing apparatuses.

Abstract: A semiconductor device including a via plug formed on a substrate and a metal layer for interconnection formed at an end of the via plug, wherein an insulating structure is under the metal layer for interconnection and the insulating structure has a different layered structure according to a positional relationship with the metal layer for interconnection is disclosed.

Abstract: An image sensing apparatus includes a first substrate structure, a second substrate structure, and a memory chip. The first substrate structure includes a pixel region having a photoelectric conversion element. The second substrate structure includes a first surface connected to the first substrate structure and a second surface opposite the first surface, and also includes a circuit region to drive the pixel region. The memory chip is mounted on the second surface of the second substrate structure. The first substrate structure and the second substrate structure are electrically connected by first connection vias passing through the first substrate structure. The second substrate structure and the memory chip are electrically connected by second connection vias passing through a portion of the second substrate structure. The first connection vias and the second connection vias are at different positions on a plane.

Abstract: An image sensing apparatus includes a first substrate structure, a second substrate structure, and a memory chip. The first substrate structure includes a pixel region having a photoelectric conversion element. The second substrate structure includes a first surface connected to the first substrate structure and a second surface opposite the first surface, and also includes a circuit region to drive the pixel region. The memory chip is mounted on the second surface of the second substrate structure. The first substrate structure and the second substrate structure are electrically connected by first connection vias passing through the first substrate structure. The second substrate structure and the memory chip are electrically connected by second connection vias passing through a portion of the second substrate structure. The first connection vias and the second connection vias are at different positions on a plane.

Abstract: A semiconductor device including a via plug formed on a substrate and a metal layer for interconnection formed at an end of the via plug, wherein an insulating structure is under the metal layer for interconnection and the insulating structure has a different layered structure according to a positional relationship with the metal layer for interconnection is disclosed.

Abstract: An image sensing apparatus includes a first substrate structure, a second substrate structure, and a memory chip. The first substrate structure includes a pixel region having a photoelectric conversion element. The second substrate structure includes a first surface connected to the first substrate structure and a second surface opposite the first surface, and also includes a circuit region to drive the pixel region. The memory chip is mounted on the second surface of the second substrate structure. The first substrate structure and the second substrate structure are electrically connected by first connection vias passing through the first substrate structure. The second substrate structure and the memory chip are electrically connected by second connection vias passing through a portion of the second substrate structure. The first connection vias and the second connection vias are at different positions on a plane.

Abstract: A method of manufacturing an image sensing apparatus includes: forming a first substrate structure including a first region of a pixel region, the first substrate structure having a first surface and a second surface; forming a second substrate structure including a circuit region for driving the pixel region, the second substrate structure having a third surface and a fourth surface; bonding the first substrate structure to the second substrate structure, such that the first surface is connected to the third surface; forming a second region of the pixel region on the second surface; forming a first connection via, the first connection via extending from the second surface to pass through the first substrate structure; mounting semiconductor chips on the fourth surface, using a conductive bump; and separating a stack structure of the first substrate structure, the second substrate structure, and the semiconductor chips into unit image sensing apparatuses.

Abstract: A screen scroll apparatus of a portable device includes: a sensor unit which senses and outputs 2-dimensional coordinate values of at least one position related to the portable device; a display unit; a memory storing contents with a resolution higher than that of the screen that can be displayed; and a control unit which scrolls the screen based on the 2-dimensional coordinate values if the 2-dimensional coordinate values change when contents are read from the memory and provided to the display unit. A screen scroll method includes: if a resolution of contents displayed on the portable device is higher than a resolution of a screen that can be displayed, monitoring 2-dimensional coordinate values of at least one position related to the portable device output from the sensor unit; and if the 2-dimensional coordinate values change, scrolling a screen displayed on the portable device based on the 2-dimensional coordinate values.

Abstract: A content management method and apparatus are provided. A method for a first device to provide content to a second device in a home network includes: receiving content information through a Really Simple Syndication (RSS) feed provided from a content server outside of the home network; updating a content list, which can be provided by the first device through the home network, based on the content information which is received; and transmitting the updated content list to the second device.