Patents by Inventor Taec-Jun KIM

Taec-Jun KIM has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240248636
    Abstract: A controller of a storage system, includes a plurality of modules each including an intellectual property (IP) module and a core module, wherein, based on the IP module operating as a master for a first module of the plurality of modules, an idle clock of the first module is a first clock, wherein based on the core module operating as a master for a second module of the plurality of modules, an idle clock of the second module is a second clock, wherein a clock frequency of the first clock is greater than zero and smaller than a maximum clock frequency, and wherein a clock frequency of the second clock is zero.
    Type: Application
    Filed: July 25, 2023
    Publication date: July 25, 2024
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Kwanhyo KIM, Taec-Jun KIM
  • Patent number: 9847122
    Abstract: A program method of a multi-bit memory device is provided. First page data is programmed in a first region of a memory cell array. The first page data is stored in a first buffer of a page buffer. Second page data is programmed in the first region of the memory cell array. The second page data is stored in a third buffer of the page buffer. Third page data is stored in the first region of the memory cell array. The second page data stored in the third buffer is transferred to a second buffer of the page buffer and the third page data is stored in the third buffer. The first to third page data stored in page buffer are programmed in a second region of the memory cell array.
    Type: Grant
    Filed: August 5, 2014
    Date of Patent: December 19, 2017
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Wan-Soo Choi, Taec-Jun Kim, Sang-Wook Nam, Jae-Hwa Lee
  • Publication number: 20150046638
    Abstract: A program method of a multi-bit memory device is provided. First page data is programmed in a first region of a memory cell array. The first page data is stored in a first buffer of a page buffer. Second page data is programmed in the first region of the memory cell array. The second page data is stored in a third buffer of the page buffer. Third page data is stored in the first region of the memory cell array. The second page data stored in the third buffer is transferred to a second buffer of the page buffer and the third page data is stored in the third buffer. The first to third page data stored in page buffer are programmed in a second region of the memory cell array.
    Type: Application
    Filed: August 5, 2014
    Publication date: February 12, 2015
    Inventors: Wan-Soo CHOI, Taec-Jun KIM, Sang-Wook NAM, Jae-Hwa LEE