Abstract: A field transistor for electrostatic discharge (ESD) protection and method for making such a transistor is described. The field transistor includes a gate conductive layer pattern formed on a field oxide layer. Since the gate conductive layer pattern is formed on the field oxide layer, a thin gate insulating layer having a high possibility of insulation breakdown is not used. To form an inversion layer for providing a current path between source and drain regions, a field oxide layer is interposed to form low concentration source and drain regions overlapped by the gate conductive layer pattern.

Abstract: The present invention relates to an electrostatic discharge diode. The electrostatic discharge diode according to exemplary embodiment of the present invention includes: an N-type well formed on a substrate; an n? region formed on the N-type well; a plurality of p? regions penetrated and formed in the n? region; a plurality of n+ regions penetrated and formed in a first layer in which the n? region and a plurality of the p? regions are formed; a plurality of n+ regions penetrated and formed in a first layer in which the n? region and a plurality of the p? regions are formed; and a plurality of p+ regions penetrated and formed in the first layer, wherein a first n+ region among a plurality of the n+ regions and a first p+ region corresponding to the first n+ region are penetrated and formed in each other region of the corresponding first p? region among a plurality of the p? regions.

Abstract: A field transistor for electrostatic discharge (ESD) protection and method for making such a transistor is described. The field transistor includes a gate conductive layer pattern formed on a field oxide layer. Since the gate conductive layer pattern is formed on the field oxide layer, a thin gate insulating layer having a high possibility of insulation breakdown is not used. To form an inversion layer for providing a current path between source and drain regions, a field oxide layer is interposed to form low concentration source and drain regions overlapped by the gate conductive layer pattern.

Abstract: A high voltage integrated circuit contains a freewheeling diode embedded in a transistor. It further includes a control block controlling a high voltage transistor and a power block—including the high voltage transistor—isolated from the control block by a device isolation region. The high voltage transistor includes a semiconductor substrate of a first conductivity type, a epitaxial layer of a second conductivity type on the semiconductor substrate, a buried layer of the second conductivity type between the semiconductor substrate and the epitaxial layer, a collector region of the second conductivity type on the buried layer, a base region of the first conductivity type on the epitaxial layer, and an emitter region of the second conductivity type formed in the base region. The power block further includes a deep impurity region of the first conductivity type near the collector region to form a PN junction.

Abstract: A field transistor for electrostatic discharge (ESD) protection and method for making such a transistor is described. The field transistor includes a gate conductive layer pattern formed on a field oxide layer. Since the gate conductive layer pattern is formed on the field oxide layer, a thin gate insulating layer having a high possibility of insulation breakdown is not used. To form an inversion layer for providing a current path between source and drain regions, a field oxide layer is interposed to form low concentration source and drain regions overlapped by the gate conductive layer pattern.

Abstract: A high voltage integrated circuit contains a freewheeling diode embedded in a transistor. It further includes a control block controlling a high voltage transistor and a power block—including the high voltage transistor—isolated from the control block by a device isolation region. The high voltage transistor includes a semiconductor substrate of a first conductivity type, a epitaxial layer of a second conductivity type on the semiconductor substrate, a buried layer of the second conductivity type between the semiconductor substrate and the epitaxial layer, a collector region of the second conductivity type on the buried layer, a base region of the first conductivity type on the epitaxial layer, and an emitter region of the second conductivity type formed in the base region. The power block further includes a deep impurity region of the first conductivity type near the collector region to form a PN junction.

Abstract: A high voltage integrated circuit contains a freewheeling diode embedded in a transistor. It further includes a control block controlling a high voltage transistor and a power block—including the high voltage transistor—isolated from the control block by a device isolation region. The high voltage transistor includes a semiconductor substrate of a first conductivity type, a epitaxial layer of a second conductivity type on the semiconductor substrate, a buried layer of the second conductivity type between the semiconductor substrate and the epitaxial layer, a collector region of the second conductivity type on the buried layer, a base region of the first conductivity type on the epitaxial layer, and an emitter region of the second conductivity type formed in the base region. The power block further includes a deep impurity region of the first conductivity type near the collector region to form a PN junction.

Abstract: The present invention relates to an electrostatic discharge diode. The electrostatic discharge diode according to exemplary embodiment of the present invention includes: an N-type well formed on a substrate; an n? region formed on the N-type well; a plurality of p? regions penetrated and formed in the n? region; a plurality of n+ regions penetrated and formed in a first layer in which the n? region and a plurality of the p? regions are formed; a plurality of n+ regions penetrated and formed in a first layer in which the n? region and a plurality of the p? regions are formed; and a plurality of p+ regions penetrated and formed in the first layer, wherein a first n+ region among a plurality of the n+ regions and a first p+ region corresponding to the first n+ region are penetrated and formed in each other region of the corresponding first p? region among a plurality of the p? regions.

Abstract: A high voltage integrated circuit contains a freewheeling diode embedded in a transistor. It further includes a control block controlling a high voltage transistor and a power block—including the high voltage transistor—isolated from the control block by a device isolation region. The high voltage transistor includes a semiconductor substrate of a first conductivity type, a epitaxial layer of a second conductivity type on the semiconductor substrate, a buried layer of the second conductivity type between the semiconductor substrate and the epitaxial layer, a collector region of the second conductivity type on the buried layer, a base region of the first conductivity type on the epitaxial layer, and an emitter region of the second conductivity type formed in the base region. The power block further includes a deep impurity region of the first conductivity type near the collector region to form a PN junction.

Abstract: A field transistor for electrostatic discharge (ESD) protection and method for making such a transistor is described. The field transistor includes a gate conductive layer pattern formed on a field oxide layer. Since the gate conductive layer pattern is formed on the field oxide layer, a thin gate insulating layer having a high possibility of insulation breakdown is not used. To form an inversion layer for providing a current path between source and drain regions, a field oxide layer is interposed to form low concentration source and drain regions overlapped by the gate conductive layer pattern.