Abstract: Disclosed is a method of forming patterns including coating a metal-containing resist composition on a substrate; a heat treatment including drying and heating to form a metal-containing resist layer on the substrate; exposing a metal-containing resist layer using a patterned mask; and developing including coating a developer composition to remove unexposed regions to form a resist pattern, wherein the coating the metal-containing resist composition is performed by coating the metal-containing resist composition with a spin coater at a speed of about 100 to about 1,500 rpm for about 60 to about 120 seconds, the heating is performed at a temperature of about 90 to about 200° C. for about 30 to about 120 seconds, the exposing the metal-containing resist layer is performed by irradiating extreme ultraviolet light, light having a wavelength of about 5 nm to about 50 nm, or a combination thereof.

Abstract: A photoresist composition including an organometallic compound, which includes at least one metal-ligand bond, a metal core, and at least one organic ligand bonded to the metal core; at least one first organic ligand precursor, which is different in chemical structure from the at least one organic ligand of the organometallic compound, and which includes a sulfonic acid group and has a structure capable of forming a coordination complex with the metal core; and a solvent. A method of manufacturing an integrated circuit device that includes forming a photoresist film on a substrate by use of the photoresist composition and forming a modified organometallic compound by binding an organic ligand including a sulfonic acid group to the organometallic compound through a ligand exchange between the organometallic compound and the at least one first organic ligand precursor based on chemical equilibrium in the photoresist film.

Abstract: A metal-containing photoresist developer composition, and a method of forming patterns including a step (e.g., an act or task) of developing using the same are provided. The metal-containing photoresist developer composition includes an organic solvent, an acid compound, and a conjugate base compound of the acid compound.

Abstract: Disclosed are a metal-containing photoresist developer composition, and a method of forming patterns including a developing step utilizing the metal-containing photoresist developer composition. The metal-containing photoresist developer composition includes an organic solvent, an acid compound having 1.0?pKa1?4.8, and at least one alcohol-based compound selected from a diol compound derived from an acyclic hydrocarbon and a cyclic alcohol compound.

Abstract: A semiconductor photoresist composition includes an organotin compound represented by Chemical Formula 1 and a solvent. A method for forming patterns uses the semiconductor photoresist composition.

Abstract: Disclosed are a composition for depositing a thin film including an organometallic compound including strontium, barium, or a combination thereof; and at least one unshared electron pair-containing compound represented by Chemical Formula 1, a method of manufacturing a thin film using the composition for depositing the thin film, and the thin film manufactured from the composition for depositing the thin film, and a semiconductor device including the thin film.

Abstract: An organometallic compound represented by Chemical Formula 1 may be used in a composition for depositing a thin film including the organometallic compound, where A is derived from a compound represented by Chemical Formula 2: Embodiments of the present disclosure include the thin film, a manufacturing method for the thin film using the composition for depositing the thin film, and a semiconductor device including the thin film.

Abstract: Disclosed are a composition for depositing a thin film including an organometallic compound including strontium, barium, or a combination thereof; and at least one unshared electron pair-containing compound represented by Chemical Formula 1, a method of manufacturing a thin film using the composition for depositing the thin film, and the thin film manufactured from the composition for depositing the thin film, and a semiconductor device including the thin film.