Abstract: A semiconductor nanoparticle, a method of producing the semiconductor nanoparticle, and an electronic device including the semiconductor nanoparticle. The semiconductor nanoparticle includes silver, indium, gallium, and sulfur, with a molar ratio of gallium to indium (Ga/In) of greater than or equal to about 0.8:1 and less than or equal to about 20:1. The semiconductor nanoparticle is substantially free of copper and is configured to emit red light. The emission peak wavelength of the red light is greater than or equal to about 600 nm and less than or equal to about 650 nm, with a full width at half maximum (FWHM) of greater than or equal to about 5 nm and less than or equal to about 90 nm.

Abstract: A semiconductor nanoparticle, a method of producing the nanoparticle, and an electronic device including the same. The semiconductor nanoparticle includes silver, indium, gallium, and sulfur, where in the semiconductor nanoparticle, a mole ratio of gallium to indium (Ga:In) is greater than or equal to about 6.7:1 and less than or equal to about 40:1, a mole ratio of silver to indium (Ag:In) is greater than or equal to about 5:1 and less than or equal to about 30:1, the semiconductor nanoparticle is configured to emit light, and a full width at half maximum of a luminescent spectrum of the light is greater than or equal to about 10 nm and less than or equal to about 50 nm.

Abstract: An ink composition, a production method thereof, a composite prepared therefrom, and devices including the same are provide. The ink composition includes an additive, a semiconductor nanoparticle, and a polymerizable monomer, the additive includes a phosphorus compound, the phosphorus compound contains a bond between phosphorus and oxygen, and the semiconductor nanoparticle includes a group Nov. 13, 2016 compound (or semiconductor nanocrystal) containing silver, group 13 metals (e.g., indium and gallium), and group 16 elements (e.g., sulfur).

Abstract: A negative electrode includes a negative electrode active material layer, wherein the negative electrode active material layer includes a negative electrode active material and a conductive agent, wherein the negative electrode active material includes a silicon-based active material, the silicon-based active material includes SiOx(0?x<2), the conductive agent includes a carbon nanotube structure in which 2 to 5,000 single-walled carbon nanotube units are bonded side by side, and the carbon nanotube structure is included in an amount of 0.01 wt % to 1.0 wt % in the negative electrode active material layer. A secondary battery including the negative electrode, and a method of preparing same are also provided.

Abstract: The present invention relates to an electrode including an electrode active material layer, wherein the electrode active material layer includes an electrode active material and a conductive agent, wherein the conductive agent includes a first conductive agent and a second conductive agent, wherein the first conductive agent includes a secondary particle in which a portion of one graphene sheet is connected to a portion of adjacent another graphene sheet, the secondary particle includes a plurality of graphene sheets arranged in different directions, the second conductive agent includes a carbon nanotube structure in which 2 to 5,000 single-walled carbon nanotube units are bonded to each other, and the carbon nanotube structure is included in an amount of 0.01 wt % to 0.5 wt % in the electrode active material layer, and a secondary battery including the same.

Abstract: A layered structure including a photoluminescent layer including a quantum dot polymer composite; a light absorption layer disposed on the photoluminescent layer, the light absorption layer including an absorptive color-filter material; and a silicon containing layer disposed between the photoluminescent layer and the light absorption layer, wherein the quantum dot polymer composite includes a first polymer matrix and a plurality of quantum dots dispersed in the first polymer matrix, and the plurality of quantum dots absorb excitation light and emits light in a longer wavelength than the wavelength of the excited light; and the absorptive color-filter material is dispersed in a second polymer matrix, and the absorptive color-filter material absorbs the excitation light that passes through the photoluminescent layer and transmits the light emitted from the plurality of quantum dots and an electronic device including the same.

Abstract: The present invention relates to a negative electrode including a negative electrode collector, a first negative electrode active material layer disposed on the negative electrode collector, and a second negative electrode active material layer disposed on the first negative electrode active material layer, wherein the second negative electrode active material layer includes a second negative electrode active material and a second conductive agent, wherein the second negative electrode active material includes a silicon-based active material, the silicon-based active material includes SiOx (0?x<2), the second conductive agent includes a carbon nanotube structure in which 2 to 5,000 single-walled carbon nanotube units are bonded side by side, and the carbon nanotube structure is included in an amount of 0.01 wt % to 1.0 wt % in the second negative electrode active material layer, and a secondary battery including the same.

Abstract: A conductive agent includes a first particle and a second particle, wherein the first particle includes a secondary particle structure in which graphene sheets are connected to each other, the first particle includes a plurality of graphene sheets arranged in different directions, and the second particle is a carbon nanotube. An electrode including the conductive agent, and a secondary battery including the electrode are also provided.

Abstract: An electrode includes an electrode active material layer, wherein the electrode active material layer includes an electrode active material and a conductive agent, wherein the conductive agent includes a first conductive agent and a second conductive agent, wherein the first conductive agent includes a secondary particle in which a plurality of graphene sheets are arranged in different directions and a portion of one graphene sheet is connected to a portion of adjacent another graphene sheet, the second conductive agent includes a carbon nanotube structure in which 2 to 5,000 single-walled carbon nanotube units are bonded to each other, and the carbon nanotube structure is included in an amount of 0.01 wt % to 0.5 wt % in the electrode active material layer. A secondary battery including the electrode is also provided.

Abstract: A positive electrode active material, a method for producing the same, and a positive electrode and a lithium secondary battery in including the same are disclosed herein. In some embodiments, a method of producing a positive electrode active material includes mixing a lithium transition metal oxide and a carbon-based material having a hollow structure to form a mixture, and mechanically treating the mixture to form a carbon coating layer on the surface of the lithium transition metal oxide, wherein the carbon-based material has a chain shape, and has a specific surface area of 500 m2/g or greater, a graphitization degree (ID/IG) of 1.0 or higher, and a dibutylphthalate (DBP) absorption of 300 mL/100 g or greater.

Abstract: A negative electrode includes a negative electrode active material layer, wherein the negative electrode active material layer includes a negative electrode active material and a conductive agent, wherein the negative electrode active material includes a silicon-based active material, the silicon-based active material includes SiOx(0?x<2), the conductive agent includes a carbon nanotube structure in which 2 to 5,000 single-walled carbon nanotube units are bonded side by side, and the carbon nanotube structure is included in an amount of 0.01 wt % to 1.0 wt % in the negative electrode active material layer. A secondary battery including the negative electrode, and a method of preparing same are also provided.

Abstract: According to an embodiment of the present invention, disclosed is a camera device comprising: a housing; a lens assembly including at least one lens; a driving unit for moving the lens assembly; a main substrate on which an image sensor is provided; and a first substrate and a second substrate electrically connected to the driving unit and arranged on facing side surfaces of the housing to be spaced apart from each other, wherein the main substrate includes a first connection member connected to the first substrate and a second connection member connected to the second substrate.

Abstract: An ink composition including a semiconductor nanoparticle, a first organic ligand, and a polymerizable monomer; and a semiconductor nanoparticle-polymer composite prepared therefrom. The semiconductor nanoparticle includes a Group 11-13-16 compound including silver, indium, gallium, and sulfur. The first organic ligand includes an aromatic group and fluorine, and in the ink composition, the amount of the semiconductor nanoparticles is about 2 weight percent to about 70 weight percent based on a total weight of the ink composition.

Abstract: The present invention relates to a negative electrode including a negative electrode collector, a first negative electrode active material layer disposed on the negative electrode collector, and a second negative electrode active material layer disposed on the first negative electrode active material layer, wherein the second negative electrode active material layer includes a second negative electrode active material and a second conductive agent, wherein the second negative electrode active material includes a silicon-based active material, the silicon-based active material includes SiOx (0?x<2), the second conductive agent includes a carbon nanotube structure in which 2 to 5,000 single-walled carbon nanotube units are bonded side by side, and the carbon nanotube structure is included in an amount of 0.01 wt % to 1.0 wt % in the second negative electrode active material layer, and a secondary battery including the same.

Abstract: A display panel including a light emitting panel; and a color conversion panel with a surface opposite a surface of the light emitting panel. The light emitting panel is configured to emit incident light including a first light and a second light. The color conversion panel includes a color conversion layer including two or more color conversion regions, a color conversion region includes a first region corresponding to the green pixel, the first region includes a matrix and a first composite dispersed within the matrix and including a plurality of luminescent nanostructures, and the spectral overlap between a UV-Vis absorption spectrum of the luminescent nanostructures, the maximum emission peak of the first light, and the maximum emission peak of the second light satisfies the following equation: B/A?about 0.6 A and B are as defined.

Abstract: A negative electrode includes a negative electrode active material layer, wherein the negative electrode active material layer includes a negative electrode active material and a conductive material. The negative electrode active material includes SiOx (0?x<2) particles and the conductive material includes secondary particles in which a portion of one graphene sheet is connected to a portion of an adjacent graphene sheet and a carbon nanotube structure in which 2 to 5,000 single-walled carbon nanotube units are coupled to each other, wherein the oxygen content of the secondary particles is 1 wt % to 10 wt % based on the total weight of the secondary particles, the specific surface area of the secondary particles measured by a nitrogen adsorption BET method is 500 m2/g to 1100 m2/g, and the carbon nanotube structure is included in the negative electrode active material layer in an amount of an 0.01 wt % to 1.0 wt %.

Abstract: The present invention relates to a silicon-carbon composite negative electrode active material, a negative electrode including the same, and a secondary battery, wherein the silicon-carbon composite negative electrode active material includes a core containing SiOX (0?X<2), a carbon layer covering at least a portion of the surface of the core, a carbon nanotube structure positioned on the carbon layer, and a polyvinylidene fluoride coating at least a portion of the carbon nanotube structure, wherein the carbon nanotube structure has a structure formed by arranging and bonding 2 to 5,000 single-walled carbon nanotube units side by side, and a portion of the carbon nanotube structure is bonded to the carbon layer.

Abstract: A cadmium-free, core shell quantum dot, a quantum dot polymer composite, and electronic devices including the quantum dot polymer composite. The core shell quantum dot has an extinction coefficient per gram of greater than or equal to 0.3, an ultraviolet-visible absorption spectrum curve that has a positive differential coefficient value at 450 nm, wherein the core shell quantum dot includes a semiconductor nanocrystal core including indium and phosphorus, and optionally zinc, and a semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the shell including zinc, selenium, and sulfur, wherein the core shell quantum dot has a quantum efficiency of greater than or equal to about 80%, and is configured to emit green light upon excitation.

Abstract: A method of manufacturing a semiconductor nanoparticle, the semiconductor nanoparticle manufactured therefrom, and an electronic device including the semiconductor nanoparticle. The method of manufacturing the semiconductor nanoparticle includes combining a first semiconductor nanocrystal that includes silver, a Group 13 element, and a chalcogen element, with a gallium precursor, a sulfur precursor, and a silver compound in a medium including an organic solvent; and heating the medium to a reaction temperature to obtain a crude solution including the semiconductor nanoparticles. The semiconductor nanoparticle includes silver, indium, gallium, and sulfur, and the size is greater than or equal to about 2 nm and less than or equal to about 50 nm.

Abstract: A semiconductor nanoparticle including a first semiconductor nanocrystal including silver, indium, gallium, and sulfur, and a semiconductor nanoparticle including a second semiconductor nanocrystal including zinc, gallium, and sulfur, a method of manufacturing the same, and an electronic device including the same. The semiconductor nanoparticle is configured to emit a green light. The green light has a peak emission wavelength of about 500 nanometers to about 580 nanometers. In the semiconductor nanoparticle, a molar ratio of zinc to indium is about 0.1:1 to about 10:1.