Abstract: Provided is an apparatus for measuring a wafer. The apparatus may include a chuck disposed on a stage and a plate connected with the stage, a horizontal frame configured to support a wafer, and a vertical frame connecting the plate and the horizontal frame. The apparatus may further include first to third adsorption portions connected with the horizontal frame and configured to adsorb the wafer, a support bar penetrating through the chuck and extending in a first direction and a beam irradiator connected to the support bar and disposed between the plate and the horizontal frame. The beam irradiator may be configured to irradiate a beam on the wafer. The apparatus may further include a detector on an opposite side of the horizontal frame from the beam irradiator and configured to receive the beam after it has penetrated through the wafer.

Abstract: Provided is an apparatus for measuring a wafer. The apparatus may include a chuck disposed on a stage and a plate connected with the stage, a horizontal frame configured to support a wafer, and a vertical frame connecting the plate and the horizontal frame. The apparatus may further include first to third adsorption portions connected with the horizontal frame and configured to adsorb the wafer, a support bar penetrating through the chuck and extending in a first direction and a beam irradiator connected to the support bar and disposed between the plate and the horizontal frame. The beam irradiator may be configured to irradiate a beam on the wafer. The apparatus may further include a detector on an opposite side of the horizontal frame from the beam irradiator and configured to receive the beam after it has penetrated through the wafer.

Abstract: A wafer inspection apparatus includes a linear stage configured to support a chuck on which a wafer is disposed and to move the chuck along a guide rail, wherein the guide rail extends in a first direction, an image sensor module overlapping the linear stage, and a rotary stage supported by the linear stage. The rotary stage is configured to rotate the chuck in a state where a center of the wafer is aligned with the image sensor module. The image sensor module includes a light source directing light onto the wafer, and an image sensor extending in a second direction crossing the first direction.

Abstract: An inspection apparatus includes a light source. A first measurement unit is configured to receive light from the light source and direct it to a first measurement object. A second measurement unit is configured to receive the light from the light source and direct it to a second measurement object. An inspection unit is configured to receive a first optical signal provided from the first measurement unit and inspect the first measurement object using the first optical signal, and to receive a second optical signal provided from the second measurement unit and inspect the second measurement object using the second optical signal. A measurement position selection unit is configured to alternately enable the inspection of the two measurement units by adjusting an angle of a reflection mirror.

Abstract: Provided are an atomic emission spectrometer (AES), which may be downscaled with high detection intensity, a semiconductor manufacturing facility including the AES, and a method of manufacturing a semiconductor device using the AES. The AES includes: at least one laser generator configured to generate laser beams; a chamber including an elliptical or spherical mirror disposed inside the chamber and configured to reflect the laser beams transmitted into the chamber so that the laser beams are condensed and irradiated on an analyte contained in the chamber to generate plasma and emit plasma light; a supplier connected to the chamber to supply the analyte into the chamber; and a spectrometer configured to receive and analyze the plasma light, and obtain data regarding the plasma light to detect elements in the analyte.

Abstract: An inspection apparatus includes a light source. A first measurement unit is configured to receive light from the light source and direct it to a first measurement object. A second measurement unit is configured to receive the light from the light source and direct it to a second measurement object. An inspection unit is configured to receive a first optical signal provided from the first measurement unit and inspect the first measurement object using the first optical signal, and to receive a second optical signal provided from the second measurement unit and inspect the second measurement object using the second optical signal. A measurement position selection unit is configured to alternately enable the inspection of the two measurement units by adjusting an angle of a reflection mirror.

Abstract: A surface inspecting method includes: irradiating an incident light beam of a first polarized state on a target object, the incident light beam comprising parallel light and having a cross-sectional area: measuring a second polarized state of a reflected light beam reflected from the target object; and performing inspection on an entire area of the target object on which the incident light beam is irradiated, based on a variation between the first polarized state and the second polarized state.

Abstract: Disclosed is a substrate inspection system. The substrate inspection system comprises a substrate inspection apparatus that inspects a substrate by irradiating light thereto. The substrate inspection apparatus comprises a light source to irradiate light onto the substrate, a detector to receive light from the substrate, and a controller to control an inspection mode of the substrate inspection apparatus by controlling the light source and the detector. The inspection mode comprises a first inspection mode to inspect whether a particle is present on the substrate and a second inspection mode to inspect a thickness of the substrate.

Abstract: A wafer inspection apparatus includes a linear stage configured to support a chuck on which a wafer is disposed and to move the chuck along a guide rail, wherein the guide rail extends in a first direction, an image sensor module overlapping the linear stage, and a rotary stage supported by the linear stage. The rotary stage is configured to rotate the chuck in a state where a center of the wafer is aligned with the image sensor module. The image sensor module includes a light source directing light onto the wafer, and an image sensor extending in a second direction crossing the first direction.

Abstract: A surface inspecting method includes: irradiating an incident light beam of a first polarized state on a target object, the incident light beam comprising parallel light and having a cross-sectional area: measuring a second polarized state of a reflected light beam reflected from the target object; and performing inspection on an entire area of the target object on which the incident light beam is irradiated, based on a variation between the first polarized state and the second polarized state.