Abstract: A super-steep switching device is provided. The super-steep switching device may include a substrate, a semiconductor channel on the substrate, a source electrode and a drain electrode, which are disposed on the semiconductor channel and spaced apart from each other, a gate electrode overlapping a portion of the semiconductor channel and not overlapping a remaining portion of the semiconductor channel, and an insulating layer disposed between the gate electrode and the semiconductor channel and covering an entire surface of the semiconductor channel.

Abstract: A transfer apparatus includes a first transfer assembly configured to allow a plurality of objects to be introduced and including a plurality of first rollers and a first driver configured to drive the plurality of first rollers, a second transfer assembly including a plurality of second rollers, a plurality of alignment areas on the plurality of second rollers, and a plurality of second drivers configured to drive the plurality of second rollers, wherein a number of the plurality of alignment areas may correspond to a maximum number of the objects allowed to be introduced, and a third transfer assembly configured to allow the objects to discharge therefrom and including a plurality of third rollers and a third driver configured to drive the plurality of third rollers wherein the second transfer assembly further includes a first controller configured to individually control rotational speeds of the plurality of second rollers.

Abstract: A display device includes a first substrate including a display area comprising pixels, and a non-display area surrounding the display area, a thin film transistor layer disposed on the first substrate and comprising a thin film transistor, a second substrate disposed on the thin film transistor layer and facing the first substrate, a sealing part disposed between the first substrate and the second substrate in the non-display area, and bonding the first and second substrates, a metal line disposed in the non-display area on the thin film transistor layer and overlapping the sealing part, and an antistatic member comprising a support supported by the metal line, a first receiver protruding from a top portion of the support to an exterior of the sealing part, and a second receiver protruding from a bottom portion of the support toward the exterior of the sealing part and facing the first receiver.

Abstract: A semiconductor package includes a plurality of semiconductor chips stacked sequentially. Each semiconductor chip includes a substrate including a back surface and a front surface which are opposite to each other, a plurality of first back conductive pads disposed on the back surface, a plurality of second back conductive pads disposed on the back surface, and a redistribution pattern disposed on the back surface and disposed between the plurality of second back conductive pads.

Abstract: A super-steep switching device is provided. The super-steep switching device may include a substrate, a semiconductor channel on the substrate, a source electrode and a drain electrode, which are disposed on the semiconductor channel and spaced apart from each other, a gate electrode overlapping a portion of the semiconductor channel and not overlapping a remaining portion of the semiconductor channel, and an insulating layer disposed between the gate electrode and the semiconductor channel and covering an entire surface of the semiconductor channel.

Abstract: A heat treatment apparatus includes a furnace body, a roller inside the furnace body, a heater inside the furnace body, an upper and lower discharge pipes on the furnace body, and a lower supply pipe on the lower part of the furnace body. The furnace body includes areas having the upper and lower discharge pipes, the areas including a first area to an Nth area disposed sequentially along a second direction being a transport direction of each of the materials, a length of the first area in the second direction is shorter than lengths of the second area to the Nth area in the second direction, and in each of the first area to the Nth area, the upper discharge pipe and the lower supply pipe are not arranged in a straight line in a third direction being a height direction to be misaligned from each other.

Abstract: A super-steep switching device and an inverter device using the same are disclosed. The super-steep switching device includes a semiconductor channel disposed on a substrate and made of a semiconductor material having impact ionization characteristic; a source electrode and a drain electrode in contact with the semiconductor channel, wherein the source electrode and the drain electrode are disposed on the substrate and are spaced apart from each other; and a gate electrode disposed on the semiconductor channel so as to overlap only a portion of the semiconductor channel, wherein a top surface of the semiconductor channel includes a first area overlapping the gate electrode, and a second area non-overlapping the gate electrode, wherein a ratio of a length of the first area and a length of the second area is in a range of 1:0.1 to 0.4.

Abstract: Proposed are a substrate processing apparatus and a substrate processing method capable of efficiently preventing contamination of a substrate and a processing space caused by a reverse flow of purge gas.

Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a housing having a treating space; a support unit configured to support a substrate in the treating space; and a brush unit configured to clean the substrate supported on the support unit, and wherein the brush unit includes: a body having a circular-shaped cross-section; and a plurality of contact pads protruding from the body and defining a plurality of groove portions for discharging foreign substances dropped from a substrate, each groove portion defined between adjacent contact pads, and wherein a width of the groove portion near a center of the body is different from a width of the groove portion near an edge of the body.

Abstract: Provided is a semiconductor package. The semiconductor package may comprise a first die, a second die on the first die, and connection terminals, the first die comprises: a first silicon substrate that has a lower side and an upper side opposite to the lower side, first through vias, first chip pads, and a first dummy pattern on the upper side of the first silicon substrate, the first dummy pattern having a grid shape from a plan view and at least partially surrounding each of the first chip pads, the second die comprises: a second silicon substrate that has a lower side and an upper side opposite to the lower side, and second through vias, wherein the connection terminals and the first chip pads are in contact with each other and are electrically connected, respectively, and wherein the first dummy pattern includes a metal film or a polymer film.

Abstract: A semiconductor package includes a mold substrate, at least one first semiconductor chip in the mold substrate and including chip pads, wiring bonding pads formed at a first surface of the mold substrate and connected to the chip pads by bonding wires, and a redistribution wiring layer covering the first surface of the mold substrate and including redistribution wirings connected to the wiring bonding wirings.

Abstract: A substrate treating liquid recovery unit with improved cleaning efficiency and a substrate treating apparatus including the same are provided. The substrate treating apparatus includes a substrate support unit; and a substrate treating liquid recovery unit surrounding the substrate support unit, for recovering a substrate treating liquid, and including a first recovery container, wherein the first recovery container comprises a first base for discharging the substrate treating liquid to an outside through a first recovery line, and including a third portion disposed on one side of the substrate support unit and a fourth portion disposed on the other side of the substrate support unit; a first sidewall extending upwardly from one end of the first base; a first upper plate extending obliquely and upwardly from an end of the first sidewall; and a first inner wall extending upwardly from the other end of the first base.

Abstract: A semiconductor package including a first lower stack on a substrate and including first lower semiconductor chips, a redistribution substrate on the first lower stack, a redistribution connector electrically connecting the substrate to the redistribution substrate, a first upper stack on the redistribution substrate and including first upper semiconductor chips, a first upper connector electrically connecting the redistribution substrate to the first upper stack, a second upper stack horizontally spaced apart from the first upper stack and including second upper semiconductor chips, and a second upper connector electrically connecting the redistribution substrate to the second upper stack may be provided. The redistribution connector may be on one side of the redistribution substrate. The first upper connector may be on one side of the first upper stack. The second upper connector may be on one side of the second upper stack.

Abstract: An apparatus for treating a substrate of the present invention includes a buffer unit, an inversion unit, a first transfer chamber, a second transfer chamber, a first cleaning chamber, and a second cleaning chamber. The first transfer chamber, the inversion unit, and the second transfer chamber are sequentially arranged in one direction. The first cleaning chamber is disposed at one side of the first transfer chamber, and the second cleaning chamber is disposed at one side of the second transfer chamber. A first main transfer robot provided in the first transfer chamber directly transfers the substrate between the buffer unit, the inversion unit, and the first cleaning chamber. The second main transfer robot provided in the second transfer chamber directly transfers the substrate between the buffer unit, the inversion unit, and the second cleaning chamber.

Abstract: Provided is a tiled display. The tiled display includes: a first display device including a first display area including pixels, a second display device including a second display area including pixels adjacent to the first display area, and a seam between the first display area and the second display area. Each of the first display device and the second display device includes: a first base part supporting a respective one of the first display device and the second display device, a thin-film transistor layer on the first base part, the thin-film transistor layer including thin-film transistors included in the pixels and including connection lines in the seam, and bridge electrodes in the seam to couple between the connection lines of the first display device and the second display device.

Abstract: A method comprising: receiving, by an electronic device, a first signal having a first frequency; identifying, by the electronic device, at least one of a strength of the first signal or a signal-to-noise ratio of the first signal; outputting, by the electronic device, a second signal having a second frequency that is different from the first frequency, the second signal being output based on at least one of the strength of the first signal or the signal-to-noise ratio of the first signal; receiving the second signal by the electronic device; and detecting whether the electronic device is at least partially immersed in a liquid based on the received second signal.

Abstract: A display device, includes: pixels at a display area; gate lines at the display area, and connected to the pixels; carry clock lines and scan clock lines at the display area; and a gate driving circuit distributedly located at the display area, and connected to the carry clock lines, the scan clock lines, and the gate lines. The gate driving circuit includes a plurality of stages, each of the stages to output, as a carry signal, a carry clock signal supplied through a corresponding carry clock line from among the carry clock lines, and to output, as a scan signal, a scan clock signal supplied through a corresponding scan clock line from among the scan clock lines. The corresponding carry clock line and the corresponding scan clock line corresponding to one stage from among the stages are spaced from each other with at least one of the pixels interposed therebetween.

Abstract: A display device includes a first substrate including a display area comprising pixels, and a non-display area surrounding the display area, a thin film transistor layer disposed on the first substrate and comprising a thin film transistor, a second substrate disposed on the thin film transistor layer and facing the first substrate, a sealing part disposed between the first substrate and the second substrate in the non-display area, and bonding the first and second substrates, a metal line disposed in the non-display area on the thin film transistor layer and overlapping the sealing part, and an antistatic member comprising a support supported by the metal line, a first receiver protruding from a top portion of the support to an exterior of the sealing part, and a second receiver protruding from a bottom portion of the support toward the exterior of the sealing part and facing the first receiver.

Abstract: A display device, includes: pixels at a display area; gate lines at the display area, and connected to the pixels; carry clock lines and scan clock lines at the display area; and a gate driving circuit distributedly located at the display area, and connected to the carry clock lines, the scan clock lines, and the gate lines. The gate driving circuit includes a plurality of stages, each of the stages to output, as a carry signal, a carry clock signal supplied through a corresponding carry clock line from among the carry clock lines, and to output, as a scan signal, a scan clock signal supplied through a corresponding scan clock line from among the scan clock lines. The corresponding carry clock line and the corresponding scan clock line corresponding to one stage from among the stages are spaced from each other with at least one of the pixels interposed therebetween.

Abstract: A substrate treating liquid recovery unit with improved cleaning efficiency and a substrate treating apparatus including the same are provided. The substrate treating apparatus includes a substrate support unit; and a substrate treating liquid recovery unit surrounding the substrate support unit, for recovering a substrate treating liquid, and including a first recovery container, wherein the first recovery container comprises a first base for discharging the substrate treating liquid to an outside through a first recovery line, and including a third portion disposed on one side of the substrate support unit and a fourth portion disposed on the other side of the substrate support unit; a first sidewall extending upwardly from one end of the first base; a first upper plate extending obliquely and upwardly from an end of the first sidewall; and a first inner wall extending upwardly from the other end of the first base.