Abstract: An electronic device including: a reference voltage generator circuit to generate a reference voltage based on a first and second voltage, the reference voltage generator circuit including: a first current source to supply a first current to each of a first and second node; an amplifier to amplify a difference between the first voltage of the first node and the second voltage of the second node and to output a difference voltage corresponding to the amplified difference; a first bipolar junction transistor (BJT) connected to the first node; a first resistor connected to the second node; a second BJT connected between the first resistor and ground; a second resistor connected between the second node and ground; and a first transistor to be supplied with a second current from the first current source; and an adaptive cascode circuit to generate a bias voltage applied to a gate of the first transistor.

Abstract: An electronic device including: a reference voltage generator circuit to generate a reference voltage based on a first and second voltage, the reference voltage generator circuit including: a first current source to supply a first current to each of a first and second node; an amplifier to amplify a difference between the first voltage of the first node and the second voltage of the second node and to output a difference voltage corresponding to the amplified difference; a first bipolar junction transistor (BJT) connected to the first node; a first resistor connected to the second node; a second BJT connected between the first resistor and ground; a second resistor connected between the second node and ground; and a first transistor to be supplied with a second current from the first current source; and an adaptive cascode circuit to generate a bias voltage applied to a gate of the first transistor.

Abstract: A semiconductor device may include: a flying capacitor connected between a first node and a second node; a first inductor having a first end connected to the flying capacitor through the first node and a second end connected to an output node; and a second inductor having a first end connected to the flying capacitor through the second node and a second end connected to the output node, wherein the semiconductor device is configurable in a plurality of different states based on a plurality of different operational phases, and wherein the flying capacitor is configured to float in a first phase, is configured to be discharged through the first inductor in a second phase that is different from the first phase, and is configured to be charged through the second inductor in a third phase that is different from the first phase and the second phase.

Abstract: A power manager circuit is provided. The power manager circuit includes a bandgap reference circuit, first and second monitoring circuits, and a reference buffer. The bandgap reference circuit generates a first voltage, based on an external voltage that is external to the power manager circuit. The first monitoring circuit determines a logical value of a first alarm signal, based on whether a first voltage level of the first voltage is within a first range. The reference buffer generates a second voltage, based on the first voltage. The second monitoring circuit determines a logical value of a second alarm signal, based on whether a second voltage level of the second voltage is within a second range.

Abstract: An electronic device including: a reference voltage generator circuit to generate a reference voltage based on a first and second voltage, the reference voltage generator circuit including: a first current source to supply a first current to each of a first and second node; an amplifier to amplify a difference between the first voltage of the first node and the second voltage of the second node and to output a difference voltage corresponding to the amplified difference; a first bipolar junction transistor (BJT) connected to the first node; a first resistor connected to the second node; a second BJT connected between the first resistor and ground; a second resistor connected between the second node and ground; and a first transistor to be supplied with a second current from the first current source; and an adaptive cascode circuit to generate a bias voltage applied to a gate of the first transistor.

Abstract: Disclosed is an electronic device, which includes an amplifier circuit that receives a feedback voltage and a reference voltage and amplifies a difference between the feedback voltage and the reference voltage to output an amplified difference voltage, an analog-to-digital converter that converts the amplified difference voltage to a digital code including two or more bits, and low-dropout (LDO) regulators that outputs output voltages based on the digital code. Each of the LDO regulators includes power transistors outputting a corresponding output voltage of the output voltages, drives one of the power transistors in a switching state, and drives each of remaining power transistors in a turned-on state or a turned-off state.

Abstract: Disclosed is an electronic device, which includes an amplifier circuit that receives a feedback voltage and a reference voltage and amplifies a difference between the feedback voltage and the reference voltage to output an amplified difference voltage, an analog-to-digital converter that converts the amplified difference voltage to a digital code including two or more bits, and low-dropout (LDO) regulators that outputs output voltages based on the digital code. Each of the LDO regulators includes power transistors outputting a corresponding output voltage of the output voltages, drives one of the power transistors in a switching state, and drives each of remaining power transistors in a turned-on state or a turned-off state.

Abstract: A power manager circuit is provided. The power manager circuit includes a bandgap reference circuit, first and second monitoring circuits, and a reference buffer. The bandgap reference circuit generates a first voltage, based on an external voltage that is external to the power manager circuit. The first monitoring circuit determines a logical value of a first alarm signal, based on whether a first voltage level of the first voltage is within a first range. The reference buffer generates a second voltage, based on the first voltage. The second monitoring circuit determines a logical value of a second alarm signal, based on whether a second voltage level of the second voltage is within a second range.

Abstract: A semiconductor circuit includes a first selection circuit which selects a first battery or a first capacitor, a second selection circuit which selects a second battery or a second capacitor, a voltage measuring circuit which measures a first voltage of the first battery or the first capacitor selected by the first selection circuit, and measures a second voltage of the second battery or the second capacitor selected by the second selection circuit, a controller which compares the first voltage and the second voltage to generate a comparison result, and a switching circuit which receives a signal based on a target output voltage, connects the first battery or capacitor selected by the first selection circuit, and the second battery capacitor selected by the second selection circuit in an interconnection relationship based on the comparison result to provide to an output terminal an output voltage responsive to the target output voltage.

Abstract: A semiconductor device for monitoring a reverse voltage is provided. The semiconductor device includes an intellectual property having an input node and an output node; a passive component connected between the output node and a potential; a monitoring circuit connected to the input node and the output node and powered by a driving power, the monitoring circuit monitoring a difference between an input level at the input node and an output level at the output node to detect a reverse voltage across the intellectual property. The driving power is provided by the output node.

Abstract: Provided are a touch screen controller, a touch screen system including the touch screen controller, and a method of operating the touch screen controller. The touch screen controller includes a driving circuit configured to output a first driving signal in a first touch mode and a second driving signal in a second touch mode, the first touch mode including a driving period and a subsequent sensing period; and a boosting circuit configured, in the first touch mode, to generate a first voltage by performing an internal switching operation based on an input voltage and a first switching signal, and configured to provide the first voltage to the driving circuit, wherein the first switching signal has a first frequency in the driving period and a second frequency different from the first frequency in the subsequent sensing period.

Abstract: A semiconductor device for monitoring a reverse voltage is provided. The semiconductor device includes an intellectual property having an input node and an output node; a passive component connected between the output node and a potential; a monitoring circuit connected to the input node and the output node and powered by a driving power, the monitoring circuit monitoring a difference between an input level at the input node and an output level at the output node to detect a reverse voltage across the intellectual property. The driving power is provided by the output node.

Abstract: A charge control circuit includes: a charge current control circuit configured to receive an input voltage at a first node, output a sensing current to a second node, and turn on a power transistor; a comparator configured to compare a voltage level of the second node with a voltage level of a third node, wherein the third node receives a charging current from the power transistor; a current mirror configured to generate a mirror current corresponding to the sensing current; and an amplifier configured to receive a first feedback voltage based on the mirror current, and amplify a difference between the first feedback voltage and a reference voltage to generate a switch control signal, wherein in response to the switch control signal and a plurality of control signals, the charge current control circuit is configured to decrease the sensing current and turn on the power transistor.

Abstract: A semiconductor device for monitoring a reverse voltage is provided. The semiconductor device includes an intellectual property having an input node and an output node; a passive component connected between the output node and a potential; a monitoring circuit connected to the input node and the output node and powered by a driving power, the monitoring circuit monitoring a difference between an input level at the input node and an output level at the output node to detect a reverse voltage across the intellectual property. The driving power is provided by the output node.

Abstract: A regulator includes a first resistor and a second resistor that are connected between a ground node and an output node, an amplifier that outputs an amplification voltage by comparing a reference voltage to a feedback voltage between the first resistor and the second resistor, and amplifying a difference between the reference voltage and the feedback voltage, an analog-to-digital converter that converts the amplification voltage to a digital code, and a plurality of transistors that are connected between a power node supplied with a power supply voltage and the output node and which adjusts a current being supplied to the output node in response to the digital code.

Abstract: A regulator includes a first resistor and a second resistor that are connected between a ground node and an output node, an amplifier that outputs an amplification voltage by comparing a reference voltage to a feedback voltage between the first resistor and the second resistor, and amplifying a difference between the reference voltage and the feedback voltage, an analog-to-digital converter that converts the amplification voltage to a digital code, and a plurality of transistors that are connected between a power node supplied with a power supply voltage and the output node and which adjusts a current being supplied to the output node in response to the digital code.

Abstract: Provided are a touch screen controller, a touch screen system including the touch screen controller, and a method of operating the touch screen controller. The touch screen controller includes a driving circuit configured to output a first driving signal in a first touch mode and a second driving signal in a second touch mode, the first touch mode including a driving period and a subsequent sensing period; and a boosting circuit configured, in the first touch mode, to generate a first voltage by performing an internal switching operation based on an input voltage and a first switching signal, and configured to provide the first voltage to the driving circuit, wherein the first switching signal has a first frequency in the driving period and a second frequency different from the first frequency in the subsequent sensing period.

Abstract: A charge control circuit includes: a charge current control circuit configured to receive an input voltage at a first node, output a sensing current to a second node, and turn on a power transistor; a comparator configured to compare a voltage level of the second node with a voltage level of a third node, wherein the third node receives a charging current from the power transistor; a current mirror configured to generate a mirror current corresponding to the sensing current; and an amplifier configured to receive a first feedback voltage based on the mirror current, and amplify a difference between the first feedback voltage and a reference voltage to generate a switch control signal, wherein in response to the switch control signal and a plurality of control signals, the charge current control circuit is configured to decrease the sensing current and turn on the power transistor.

Abstract: A charge control circuit includes: a charge current control circuit configured to receive an input voltage at a first node, output a sensing current to a second node, and turn on a power transistor; a comparator configured to compare a voltage level of the second node with a voltage level of a third node, wherein the third node receives a charging current from the power transistor; a current mirror configured to generate a mirror current corresponding to the sensing current; and an amplifier configured to receive a first feedback voltage based on the mirror current, and amplify a difference between the first feedback voltage and a reference voltage to generate a switch control signal, wherein in response to the switch control signal and a plurality of control signals, the charge current control circuit is configured to decrease the sensing current and turn on the power transistor.

Abstract: A semiconductor device for monitoring a reverse voltage is provided. The semiconductor device includes an intellectual property having an input node and an output node; a passive component connected between the output node and a potential; a monitoring circuit connected to the input node and the output node and powered by a driving power, the monitoring circuit monitoring a difference between an input level at the input node and an output level at the output node to detect a reverse voltage across the intellectual property. The driving power is provided by the output node.