Abstract: The present disclosure relates to a high-entropy alloy and a manufacturing method therefor, and in particular, a high-entropy alloy and a manufacturing method therefor that comprises a multi-element alloy matrix and Cu, and comprises an alloy having a face-centered cubic (FCC)-based phase, such that the high-entropy alloy may have greater hardness and strength than an existing transition metal alloy while maintaining a FCC-based single phase, and has high lubricity.

Abstract: Provided is an overpass-type semiconductor device and an overpass-type semiconductor device including a channel layer that overpasses a fin of a first gate. The overpass-type semiconductor device includes: a first gate including a fin having a preset height; a charge storage layer formed on the first gate and the fin; a channel layer formed on a part of the charge storage layer; a gate insulating layer formed on the channel layer; and a second gate formed on the gate insulating layer. The fin protrudes in a height direction from a center of the first gate, and the channel overpasses the fin.

Abstract: The present disclosure relates to a method of manufacturing a semiconductor light emitting device, the method comprising: providing a growth substrate on which a first semiconductor region, an active region and a second semiconductor region are sequentially formed; bonding a first light transmitting substrate to the second semiconductor region; removing the growth substrate from the first semiconductor region; attaching a second light transmitting substrate through an adhesive layer to the first semiconductor region from which the growth substrate is removed; laser ablating the first light transmitting substrate from the second semiconductor region; exposing part of the first semiconductor region, and forming a first flip chip electrode and a second flip chip electrode on the exposed first semiconductor region and the exposed second semiconductor region, respectively.

Abstract: Semiconductor circuits are provided for emulating neuron firing process using a positive feedback transistor having first and second gate electrodes in the longitudinal direction of a channel region. The first gate electrode is connected to a gate electrode of a first p-channel MOSFET to be an input terminal and the second gate electrode is connected to a drain to be applied with a supply voltage. Thus electrons and holes can accumulate separately in a channel region (i.e., a body) under each of the gate electrodes by applying input signals to the input terminal and drastically reduce the wasted power consumption in the non-fired neurons because the current is turned on and off only at a moment that corresponds to a firing of the neuron. Thus, the semiconductor circuits can be driven by low power and have the same level of endurance as a general MOSFET.

Abstract: Semiconductor circuits are provided for emulating neuron firing process using a positive feedback transistor having first and second gate electrodes in the longitudinal direction of a channel region. The first gate electrode is connected to a gate electrode of a first p-channel MOSFET to be an input terminal and the second gate electrode is connected to a drain to be applied with a supply voltage. Thus electrons and holes can accumulate separately in a channel region (i.e., a body) under each of the gate electrodes by applying input signals to the input terminal and drastically reduce the wasted power consumption in the non-fired neurons because the current is turned on and off only at a moment that corresponds to a firing of the neuron. Thus, the semiconductor circuits can be driven by low power and have the same level of endurance as a general MOSFET.

Abstract: Disclosed herein is a multilayer ceramic device including a device body having lateral surfaces and circumferential surfaces connecting the lateral surfaces, an internal electrode disposed in a length direction of the device body within the device body, an external electrode having a front portion covering the lateral surface and a band portion extending from the front portion to cover a portion of the circumferential surface, and a reinforcement pattern extending from the lateral surface toward the interior of the device body and having a length longer than a width of the band portion.

Abstract: Disclosed herein is a multilayer ceramic device, including a device body; an inner electrode arranged in the device body; and an external electrode arranged at outside of the device body and being electrically connected to the inner electrode; wherein the external electrode includes: an inner layer covering the device body; an outer layer covering the inner layer and being exposed to the outside; and an intermediate layer arranged between the inner layer and the outer layer, and made of a mixture of a copper metal and a resin, a surface of the copper metal being coated with an oxide film.

Abstract: Disclosed herein is a multilayer ceramic device, including a device body; an inner electrode arranged in the device body; and an external electrode arranged at outside of the device body and being electrically connected to the inner electrode; wherein the external electrode includes: an inner layer covering the device body; an outer layer covering the inner layer and being exposed to the outside; and an intermediate layer arranged between the inner layer and the outer layer, and made of a mixture of a copper metal and a resin, a surface of the copper metal being coated with an oxide film.

Abstract: Disclosed herein is a multilayer ceramic device including a device body having lateral surfaces and circumferential surfaces connecting the lateral surfaces, an internal electrode disposed in a length direction of the device body within the device body, an external electrode having a front portion covering the lateral surface and a band portion extending from the front portion to cover a portion of the circumferential surface, and a reinforcement pattern extending from the lateral surface toward the interior of the device body and having a length longer than a width of the band portion.