Patents by Inventor Tae Jun Park

Tae Jun Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20260146303
    Abstract: The present invention provides: a method for recovering lithium with high efficiency from low-grade lithium minerals through process improvement, whereby a process for recovering lithium from lithium-containing minerals by acid-roasting, heat-treating, water-leaching, and refining lithium-containing minerals can be improved and optimum process conditions can be derived to suppress the incorporation of impurities such as aluminum and thereby increase the rate of lithium ion recovery in a lithium component separation process; and lithium carbonate prepared thereby.
    Type: Application
    Filed: November 14, 2023
    Publication date: May 28, 2026
    Applicant: Korea Institute Of Geoscience And Mineral Resources
    Inventors: Taegong RYU, Han Kwon CHANG, Junho SHIN, Jae-Min JEONG, Byung-Su KIM, Sun Kyung KIM, Tae Jun PARK
  • Publication number: 20250374718
    Abstract: A light emitting device includes a substrate; a first conductivity type semiconductor layer disposed on the substrate; a mesa; an ohmic electrode; a contact electrode; a first reflection layer; a first pad electrode; and a second pad electrode. The first reflection layer covers at least a portion of each of the light emitting structure, the mesa electrode, and the contact electrode.
    Type: Application
    Filed: August 13, 2025
    Publication date: December 4, 2025
    Applicant: SEOUL VIOSYS CO., LTD.
    Inventors: Jin Woong LEE, Kyoung Wan KIM, Tae Jun PARK, Sang Won WOO
  • Publication number: 20250333832
    Abstract: Provided is a snout control system comprising: a snout apparatus in which one end of a steel sheet is immersed in a plating bath, containing a hot-dip galvanizing solution for plating the steel sheet, to introduce the steel sheet into the plating bath during the production process of a hot-dip galvanized steel sheet; a first sensor which is formed on a portion of the plating bath and can measure the first water level of the molten steel of the hot-dip galvanizing solution; and a processor which controls the snout apparatus and the first sensor.
    Type: Application
    Filed: May 24, 2023
    Publication date: October 30, 2025
    Inventors: Tae Jun Park, Kang Won Lee, Hyeon Woo Park
  • Patent number: 12402449
    Abstract: A light emitting device includes a substrate including a roughened surface; a light emitter disposed on the substrate, which includes a first conductivity layer; and a mesa disposed on a partial region of the first conductivity layer. An ohmic electrode can be disposed on the mesa; and a contact electrode can be disposed on the first conductivity layer. The light emitting device further includes a first reflection layer; a first pad electrode and a second pad electrode; and a second reflection layer. The first reflection layer covers at least a portion of the light emitter, the ohmic electrode and the contact electrode. The second reflection layer is disposed on an opposite side of the substrate.
    Type: Grant
    Filed: July 20, 2023
    Date of Patent: August 26, 2025
    Assignee: Seoul Viosys Co., Ltd.
    Inventors: Jin Woong Lee, Kyoung Wan Kim, Tae Jun Park, Sang Won Woo
  • Publication number: 20240367994
    Abstract: The present disclosure provides a method for partially reducing vanadium pentoxide (V2O5) using an ammonia solution, wherein ammonia is used to convert vanadium pentoxide (V2O5) powder to ammonia vanadate (NH4VO3), which is an intermediate material, after which the ammonia vanadate is heated under normal or reduced pressure in a nitrogen or argon atmosphere and then maintained for a certain period of time to partially reduce the vanadium pentoxide and thereby produce vanadium dioxide (VO2) powder, and vanadium dioxide (VO2) powder produced thereby.
    Type: Application
    Filed: July 4, 2022
    Publication date: November 7, 2024
    Inventors: Byung-Su KIM, Taegong RYU, Han Kwon CHANG, Ji-Hyuk CHOI, Chang-Youl SUH, Jeonghyun YOO, Sung-Wook CHO, Tae Jun PARK
  • Publication number: 20230361250
    Abstract: A light emitting device includes a substrate including a roughened surface; a light emitter disposed on the substrate, which includes a first conductivity layer; and a mesa disposed on a partial region of the first conductivity layer. An ohmic electrode can be disposed on the mesa; and a contact electrode can be disposed on the first conductivity layer. The light emitting device further includes a first reflection layer; a first pad electrode and a second pad electrode; and a second reflection layer. The first insulating reflection layer covers at least a portion of the light emitter emitting structure, the ohmic electrode and the contact electrode. The second reflection layer is disposed on an opposite side of the substrate.
    Type: Application
    Filed: July 20, 2023
    Publication date: November 9, 2023
    Applicant: SEOUL VIOSYS CO., LTD.
    Inventors: Jin Woong LEE, Kyoung Wan KIM, Tae Jun PARK, Sang Won WOO
  • Patent number: 11749784
    Abstract: A light emitting device includes a substrate; a first conductivity type semiconductor layer disposed on the substrate; a mesa; a transparent electrode; a contact electrode; a first insulating reflection layer; a first pad electrode and a second pad electrode; and a second insulating reflection layer. The first insulating reflection layer covers at least a portion of the light emitting structure, the transparent electrode and the contact electrode. The second insulating reflection layer is disposed on an opposite end of the substrate. The first and/or second insulating reflection layer have at least two regions which have different reflectivity properties.
    Type: Grant
    Filed: December 11, 2020
    Date of Patent: September 5, 2023
    Assignee: Seoul Viosys Co., Ltd.
    Inventors: Jin Woong Lee, Kyoung Wan Kim, Tae Jun Park, Sang Won Woo
  • Patent number: 11692227
    Abstract: A method of screening a skin whitening agent uses the stromal cell-derived factor 1 (SDF1) promoter region, the correlation between the expression amount of the skin pigment and the expression of the SDF1 promoter is observed and thus it is expected to be available in systems for pre-screening pigmentation substances and pigment reduction materials, and the drugs screened by the method is used for treatment of skin pigment-related diseases.
    Type: Grant
    Filed: July 17, 2019
    Date of Patent: July 4, 2023
    Assignee: AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION
    Inventors: Hee Young Kang, Tae Jun Park, Jung Eun Yoon
  • Publication number: 20230001261
    Abstract: A key input device applicable to a smart mat is provided, where the key input device includes a first layer in which a plurality of row contacts are formed, a second layer in which a plurality of column contacts are formed, an insulating layer disposed between the first and second layers to form an insulating region and a current carrying region, and a processor configured to detect that at least one of a plurality of key switches formed by the plurality of row contacts and the plurality of column contacts is pressed.
    Type: Application
    Filed: March 29, 2022
    Publication date: January 5, 2023
    Inventors: Min Ki KANG, Sung Ho YOO, Seong Jin HONG, Tae Jun PARK, Gi Yeon NAM
  • Patent number: 11411142
    Abstract: A light emitting diode chip includes a substrate; a first conductivity type semiconductor layer disposed on the substrate; a mesa; a transparent electrode; a contact electrode; a current spreader; a first insulating reflection layer; a first pad electrode and a second pad electrode; and a second insulating reflection layer. The first insulating reflection layer covers one end of the substrate, the first conductivity type semiconductor layer, the mesa, the transparent electrode. The second insulating reflection layer is disposed on an opposite end of the substrate and includes a structure of a distributed Bragg reflector (DBR).
    Type: Grant
    Filed: September 18, 2020
    Date of Patent: August 9, 2022
    Assignee: SEOUL VIOSYS CO., LTD.
    Inventors: Jin Woong Lee, Kyoung Wan Kim, Tae Jun Park, Sang Won Woo
  • Publication number: 20220104983
    Abstract: A negative pressure room with a safety management system according to an embodiment of the present disclosure includes an interior space being under negative pressure and is provided in a movable form, so that the negative pressure room can be constructed promptly and economically in the event of a spreading infection, thereby enabling rapid and efficient quarantine treatment and observation of patients with confirmed and suspected infections, the negative pressure room is isolated from a general ward, thereby preventing the possibility of further infection to other patients or medical staff, and real-time monitoring whether negative pressure is appropriately generated in the interior space, air quality in the interior space, and the state of an isolated patient is enabled.
    Type: Application
    Filed: December 10, 2020
    Publication date: April 7, 2022
    Inventors: Tae Young KANG, Tae Jun PARK
  • Publication number: 20210310072
    Abstract: A method of screening a skin whitening agent uses the stromal cell-derived factor 1 (SDF1) promoter region, the correlation between the expression amount of the skin pigment and the expression of the SDF1 promoter is observed and thus it is expected to be available in systems for pre-screening pigmentation substances and pigment reduction materials, and the drugs screened by the method is used for treatment of skin pigment-related diseases.
    Type: Application
    Filed: July 17, 2019
    Publication date: October 7, 2021
    Applicant: AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION
    Inventors: Hee Young KANG, Tae Jun PARK, Jung Eun YOON
  • Publication number: 20210098653
    Abstract: A light emitting diode chip includes a substrate; a first conductivity type semiconductor layer disposed on the substrate; a mesa; a transparent electrode; a contact electrode; a current spreader; a first insulating reflection layer; a first pad electrode and a second pad electrode; and a second insulating reflection layer. The first insulating reflection layer covers one end of the substrate, the first conductivity type semiconductor layer, the mesa, the transparent electrode. The second insulating reflection layer is disposed on an opposite end of the substrate and includes a structure of a distributed Bragg reflector (DBR).
    Type: Application
    Filed: December 11, 2020
    Publication date: April 1, 2021
    Applicant: SEOUL VIOSYS CO., LTD.
    Inventors: Jin Woong LEE, Kyoung Wan KIM, Tae Jun PARK, Sang Won WOO
  • Patent number: 10950757
    Abstract: A flip chip type light emitting diode chip is disclosed. The light emitting diode chip includes a substrate; a first conductivity type semiconductor layer disposed on the substrate; a mesa disposed on a partial region of the first conductivity type semiconductor layer, and including an active layer and a second conductivity type semiconductor layer; a transparent electrode; a contact electrode laterally spaced apart from the mesa; a current spreader electrically connected to the transparent electrode; a first insulating reflection layer covering the substrate; and a second insulating reflection layer disposed under the substrate, and including the distributed Bragg reflector.
    Type: Grant
    Filed: August 23, 2019
    Date of Patent: March 16, 2021
    Assignee: SEOUL VIOSYS CO., LTD.
    Inventors: Jin Woong Lee, Kyoung Wan Kim, Tae Jun Park, Sang Won Woo
  • Patent number: 10923642
    Abstract: A light emitting diode including an n-type semiconductor layer, a mesa disposed on the n-type semiconductor layer and exposing a portion thereof, and including an active layer and a p-type semiconductor layer, first and second bonding pads electrically connected to the n-type and p-type semiconductor layers, respectively, and a first insulation layer at least partially disposed between the exposed portion of the n-type semiconductor layer exposed by the mesa and the second bonding pad, in which the exposed portion of the n-type semiconductor layer has a first portion having a shortest distance to the second bonding pad, the first insulation layer covers a portion of the p-type semiconductor layer disposed between the second bonding pad and the first portion of the n-type semiconductor layer, and the first insulation layer is disposed along an edge of the p-type semiconductor layer adjacent to the exposed portion of the n-type semiconductor layer.
    Type: Grant
    Filed: May 30, 2019
    Date of Patent: February 16, 2021
    Assignee: Seoul Viosys Co., Ltd.
    Inventors: Sang Won Woo, Ye Seul Kim, Tae Jun Park, Duk Il Suh
  • Publication number: 20210005787
    Abstract: A light emitting diode chip includes a substrate; a first conductivity type semiconductor layer disposed on the substrate; a mesa; a transparent electrode; a contact electrode; a current spreader; a first insulating reflection layer; a first pad electrode and a second pad electrode; and a second insulating reflection layer. The first insulating reflection layer covers one end of the substrate, the first conductivity type semiconductor layer, the mesa, the transparent electrode. The second insulating reflection layer is disposed on an opposite end of the substrate and includes a structure of a distributed Bragg reflector (DBR).
    Type: Application
    Filed: September 18, 2020
    Publication date: January 7, 2021
    Applicant: SEOUL VIOSYS CO., LTD.
    Inventors: Jin Woong LEE, Kyoung Wan KIM, Tae Jun PARK, Sang Won WOO
  • Patent number: 10857206
    Abstract: A method of preventing or treating cutaneous pigmentation disease in a subject in need thereof, includes: providing a pharmaceutical composition comprising SDF1, an inducer or activator of SDF1, as an active ingredient; and administering the pharmaceutical composition to the subject, wherein the cutaneous pigmentation is prevented or treated, and the cutaneous pigmentation disease is selected from the group consisting of melasma, freckles, lentigo, nevus, pigmentation by drugs, pigmentation after inflammation and hyperpigmentation incurred from dermatitis.
    Type: Grant
    Filed: October 30, 2018
    Date of Patent: December 8, 2020
    Assignee: AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION
    Inventors: Hee Young Kang, Tae Jun Park, Jung Eun Yoon, Mi Sun Kim
  • Publication number: 20200127167
    Abstract: A flip chip type light emitting diode chip is disclosed. The light emitting diode chip includes a substrate; a first conductivity type semiconductor layer disposed on the substrate; a mesa disposed on a partial region of the first conductivity type semiconductor layer, and including an active layer and a second conductivity type semiconductor layer; a transparent electrode; a contact electrode laterally spaced apart from the mesa; a current spreader electrically connected to the transparent electrode; a first insulating reflection layer covering the substrate; and a second insulating reflection layer disposed under the substrate, and including the distributed Bragg reflector.
    Type: Application
    Filed: August 23, 2019
    Publication date: April 23, 2020
    Applicant: SEOUL VIOSYS CO., LTD.
    Inventors: Jin Woong LEE, Kyoung Wan KIM, Tae Jun PARK, Sang Won WOO
  • Publication number: 20190371990
    Abstract: A light emitting diode including an n-type semiconductor layer, a mesa disposed on the n-type semiconductor layer and exposing a portion thereof, and including an active layer and a p-type semiconductor layer, first and second bonding pads electrically connected to the n-type and p-type semiconductor layers, respectively, and a first insulation layer at least partially disposed between the exposed portion of the n-type semiconductor layer exposed by the mesa and the second bonding pad, in which the exposed portion of the n-type semiconductor layer has a first portion having a shortest distance to the second bonding pad, the first insulation layer covers a portion of the p-type semiconductor layer disposed between the second bonding pad and the first portion of the n-type semiconductor layer, and the first insulation layer is disposed along an edge of the p-type semiconductor layer adjacent to the exposed portion of the n-type semiconductor layer.
    Type: Application
    Filed: May 30, 2019
    Publication date: December 5, 2019
    Inventors: San Won WOO, Ye Seul KIM, Tae Jun PARK, Duk Il SUH
  • Publication number: 20190125835
    Abstract: A method of preventing or treating cutaneous pigmentation disease in a subject in need thereof, includes: providing a pharmaceutical composition comprising SDF1, an inducer or activator of SDF1, as an active ingredient; and administering the pharmaceutical composition to the subject, wherein the cutaneous pigmentation is prevented or treated, and the cutaneous pigmentation disease is selected from the group consisting of melasma, freckles, lentigo, nevus, pigmentation by drugs, pigmentation after inflammation and hyperpigmentation incurred from dermatitis.
    Type: Application
    Filed: October 30, 2018
    Publication date: May 2, 2019
    Applicant: AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION
    Inventors: Hee Young KANG, Tae Jun PARK, Jung Eun YOON, Mi Sun KIM