Abstract: Provided are a perpendicular magnetic tunnel junction (MTJ), a magnetic device including the same, and a method of manufacturing the MTJ, the perpendicular MTJ includes a lower magnetic layer; a tunnelling layer on the lower magnetic layer; and an upper magnetic layer on the tunnelling layer. One of the upper and lower magnetic layers includes a free magnetic layer that exhibits perpendicular magnetic anisotropy, wherein the magnetizing direction of the free magnetic layer is changed by a spin polarization current. A polarization enhancing layer (PEL) and an exchange blocking layer (EBL) are stacked between the tunnelling layer and the free magnetic layer.

Abstract: Provided are a perpendicular magnetic recording medium and a method of manufacturing the same. The perpendicular magnetic recording medium includes: a substrate; a soft magnetic layer formed on the substrate; an underlayer formed on the soft magnetic layer; and a recording layer comprising a plurality of ferromagnetic layers and formed on the underlayer, wherein each of the plurality of ferromagnetic layers has a magnetic anisotropic energy which decreases as distance increases from the underlayer.

Abstract: A perpendicular magnetic recording medium is provided, the perpendicular magnetic recording medium including: a substrate; a first soft magnetic underlayer formed on the substrate; a perpendicular anisotropic middle layer that is formed on the first soft magnetic underlayer and has perpendicular magnetic anisotropy; a second soft magnetic underlayer formed on the perpendicular anisotropic middle layer; and a perpendicular magnetic recording layer formed on the second soft magnetic underlayer.

Abstract: A magneto-resistive random access memory includes a MOS transistor having a first gate and source and drain junctions on a substrate, a lower electrode connected to the source junction, a first magnetic layer on the lower electrode, a dielectric barrier layer including aluminum and hafnium on the first magnetic layer which, together with the first magnetic layer, form a potential well, a second magnetic layer on the dielectric barrier layer opposite the first magnetic layer, an upper electrode on the second magnetic layer, a second gate interposed between the first gate and the lower electrode to control the magnetic data of one of the first and second magnetic layers, and a bit line positioned orthogonal to the first gate and electrically connected to the upper electrode. Improved characteristics of the barrier layer increase a magnetic resistance ratio and improve data storage capacity of the magneto-resistive random access memory.

Abstract: A magneto-resistive random access memory includes a MOS transistor having a first gate and source and drain junctions on a substrate, a lower electrode connected to the source junction, a first magnetic layer on the lower electrode, a dielectric barrier layer including aluminum and hafnium on the first magnetic layer which, together with the first magnetic layer, form a potential well, a second magnetic layer on the dielectric barrier layer opposite the first magnetic layer, an upper electrode on the second magnetic layer, a second gate interposed between the first gate and the lower electrode to control the magnetic data of one of the first and second magnetic layers, and a bit line positioned orthogonal to the first gate and electrically connected to the upper electrode. Improved characteristics of the barrier layer increase a magnetic resistance ratio and improve data storage capacity of the magneto-resistive random access memory.

Abstract: A magneto-resistive random access memory includes a MOS transistor having a first gate and source and drain junctions on a substrate, a lower electrode connected to the source junction, a first magnetic layer on the lower electrode, a dielectric barrier layer including aluminum and hafnium on the first magnetic layer which, together with the first magnetic layer, form a potential well, a second magnetic layer on the dielectric barrier layer opposite the first magnetic layer, an upper electrode on the second magnetic layer, a second gate interposed between the first gate and the lower electrode to control the magnetic data of one of the first and second magnetic layers, and a bit line positioned orthogonal to the first gate and electrically connected to the upper electrode. Improved characteristics of the barrier layer increase a magnetic resistance ratio and improve data storage capacity of the magneto-resistive random access memory.

Abstract: A perpendicular magnetic recording medium is provided. The perpendicular magnetic recording medium has an underlayer for leading perpendicular orientation of a perpendicular magnetic recording layer, stacked between a substrate and the perpendicular magnetic recording layer, and thickness of the perpendicular magnetic recording layer is controlled within the range of 5-40 nm to have a negative nucleation field.

Abstract: A magneto-resistive random access memory includes a MOS transistor having a first gate and source and drain junctions on a substrate, a lower electrode connected to the source junction, a first magnetic layer on the lower electrode, a dielectric barrier layer including aluminum and hafnium on the first magnetic layer which, together with the first magnetic layer, form a potential well, a second magnetic layer on the dielectric barrier layer opposite the first magnetic layer, an upper electrode on the second magnetic layer, a second gate interposed between the first gate and the lower electrode to control the magnetic data of one of the first and second magnetic layers, and a bit line positioned orthogonal to the first gate and electrically connected to the upper electrode. Improved characteristics of the barrier layer increase a magnetic resistance ratio and improve data storage capacity of the magneto-resistive random access memory.

Abstract: A perpendicular magnetic recording medium is provided. The perpendicular magnetic recording medium has an underlayer for leading perpendicular orientation of a perpendicular magnetic recording layer, stacked between a substrate and the perpendicular magnetic recording layer, and thickness of the perpendicular magnetic recording layer is controlled within the range of 5-40 nm to have a negative nucleation field.

Abstract: The present invention relates to an underlayer for use in a high density magnetic recording media. More particularly, the invention relates to an underlayer for use in a high density magnetic recording media comprising A1Pd or CoTi intermetallic compound having B2 crystal structure, or Co50Ti50-xMxmetal alloy in which Ti in CoTi intermetallic compound is partly substituted by other substitutional elements while maintaining its B2 crystal structure, or CoTi/Cr of a double thin film structure in which a Cr seed layer is introduced. The underlayer provided by the present invention has a crystal structure and microstructure suitable for a high density magnetic recording media, which makes a good texture structure with a Co-based magnetic layer deposited thereon and shows fine grain size distribution, high coercity and high coercity squareness.