Abstract: A black plated steel sheet may include a steel sheet and a zinc plating layer positioned on one side of the steel sheet. The zinc plating layer may contain a black layer on the uppermost surface. The black layer may include three or more portions of which the blackness is different from each other. In a first part, the thickness of the black layer may be more than 1 ?m. In a second part, the thickness of the black layer may be 250 nm or more to less than 1 ?m, and in a third part, the thickness of the black layer may be less than 200 nm.

Abstract: A display device is provided. The display device includes a first substrate, a first charge trap layer disposed on the first substrate and including silicon nitride, a semiconductor layer disposed on the first charge trap layer and including a first active layer of a first transistor and a second active layer of a second transistor, and an organic light emitting element electrically connected to the first transistor, wherein a ratio of a content of a Si element to a content of an N element in the first charge trap layer is in a range of 1.6 to 2.5.

Abstract: The present disclosure is that plating steel with spangles can be subjected to constant humidity heat treatment. Due to this, the degree of blackening is different depending on the spangle pattern, and then a black plated steel sheet having a marble texture and a beautiful pattern can be obtained when the blackening is completed.

Abstract: A display device includes a base substrate including a first substrate and a second substrate sequentially laminated, a lower semiconductor layer disposed on at least one of the first substrate and the second substrate, a buffer layer disposed on the base substrate, an active semiconductor layer disposed on the buffer layer and including a first active layer of a first transistor and a second active layer of a second transistor, a first insulating layer disposed on the active semiconductor layer, and a first conductive layer disposed on the first insulating layer and including a first gate electrode of the first transistor and a second gate electrode of the second transistor, wherein the lower semiconductor layer overlaps the first active layer, and does not overlap the second active layer.

Abstract: A magnesium alloy sheet according to an embodiment of the present invention includes greater than 3 wt % and less than or equal to 5 wt % of Al, 0.5 wt % to 1.5 wt % of Zn, 0.1 wt % to 0.5 wt % of Mn, 0.001 wt % to 0.01 wt % of B, 0.1 wt % to 0.5 wt % of Y, a balance amount of magnesium, and other inevitable impurities on the basis of a total of 100 wt %.

Abstract: The present disclosure relates to a light emitting display device including: a substrate; an anode positioned on the substrate; a black pixel defining layer, wherein an opening overlapping an anode is defined in the black pixel defining layer; an emission layer positioned in the opening of the black pixel defining layer; a spacer positioned on the black pixel defining layer and having a step; and a cathode formed on the emission layer, the black pixel defining layer, and the spacer, wherein the spacer has a first portion and a second portion having a lower height than the first portion and integrally formed with the first portion, and the end portion of the second portion is positioned closer to the opening than the end portion of the first portion.

Abstract: A display device is provided. The display device includes a first substrate, a first charge trap layer disposed on the first substrate and including silicon nitride, a semiconductor layer disposed on the first charge trap layer and including a first active layer of a first transistor and a second active layer of a second transistor, and an organic light emitting element electrically connected to the first transistor, wherein a ratio of a content of a Si element to a content of an N element in the first charge trap layer is in a range of 1.6 to 2.5.

Abstract: A display device includes a base substrate including a first substrate and a second substrate sequentially laminated, a lower semiconductor layer disposed on at least one of the first substrate and the second substrate, a buffer layer disposed on the base substrate, an active semiconductor layer disposed on the buffer layer and including a first active layer of a first transistor and a second active layer of a second transistor, a first insulating layer disposed on the active semiconductor layer, and a first conductive layer disposed on the first insulating layer and including a first gate electrode of the first transistor and a second gate electrode of the second transistor, wherein the lower semiconductor layer overlaps the first active layer, and does not overlap the second active layer.

Abstract: A magnesium alloy sheet according to an embodiment of the present invention includes greater than 3 wt % and less than or equal to 5 wt % of Al, 0.5 wt % to 1.5 wt % of Zn, 0.1 wt % to 0.5 wt % of Mn, 0.001 wt % to 0.01 wt % of B, 0.1 wt % to 0.5 wt % of Y, a balance amount of magnesium, and other inevitable impurities on the basis of a total of 100 wt %.