Abstract: Disclosed herein is a cable fault diagnosis system and method, wherein when an application signal and a reflected signal overlap each other due to the proximity of a fault location to an application location or when the intensity of the reflected signal is weak and thus falls outside of a prescribed fault diagnosis range due to remoteness of the fault location from the application location, a correction location, at which a correlation function value has a global maximum, is derived on the basis of a prescribed correlation function for an application signal applied to a cable to be inspected and an acquired reflected signal, a correction signal, which is a reflected signal from which the application signal is removed at the derived correction location, is calculated, the distance between the correction location and the acquisition location is derived on the basis of a time delay, which is calculated on the basis of the calculated correction signal and the reflected signal at the acquisition location, and a pr

Abstract: Disclosed herein is a cable fault diagnosis system and method, wherein when an application signal and a reflected signal overlap each other due to the proximity of a fault location to an application location or when the intensity of the reflected signal is weak and thus falls outside of a prescribed fault diagnosis range due to remoteness of the fault location from the application location, a correction location, at which a correlation function value has a global maximum, is derived on the basis of a prescribed correlation function for an application signal applied to a cable to be inspected and an acquired reflected signal, a correction signal, which is a reflected signal from which the application signal is removed at the derived correction location, is calculated, the distance between the correction location and the acquisition location is derived on the basis of a time delay, which is calculated on the basis of the calculated correction signal and the reflected signal at the acquisition location, and a pr

Abstract: A method of forming a metal thin film includes positioning a substrate in a region corresponding to a target, with the target including silver (Ag) and being provided in a reaction space, supplying an inert gas and an oxygen-containing gas into the reaction space. Moreover, the method further includes forming a silver (Ag)-containing conductive film on the substrate by generating plasma between the target and the substrate.

Abstract: A method of forming a metal thin film includes positioning a substrate in a region corresponding to a target, with the target including silver (Ag) and being provided in a reaction space, supplying an inert gas and an oxygen-containing gas into the reaction space. Moreover, the method further includes forming a silver (Ag)-containing conductive film on the substrate by generating plasma between the target and the substrate.

Abstract: A TFT substrate includes a transparent substrate, a scan line, a data line, a switching device and a pixel electrode. The scan line is formed on the transparent substrate. The data line is formed on the transparent substrate such that the data line is electrically insulated from the scan line. The switching device includes a gate electrode that is electrically connected to the scan line, a source electrode that is electrically connected to the data line, and a drain electrode. The pixel electrode is electrically connected to the drain electrode. At least one of the scan line and the data line includes a first metal layer, a metal oxide layer formed on the first metal layer, and a second metal layer formed on the metal oxide layer. Therefore, the metal oxide layer prevents corrosion of the first metal layer during manufacturing the TFT substrate.