Abstract: Apparatus and method for forming a polycrystalline silicon thin film by converting an amorphous silicon thin film into the polycrystalline silicon thin film using a metal are provided. The method includes: a metal nucleus adsorbing step of introducing a vapor phase metal compound into a process space where the glass substrate having the amorphous silicon formed thereon is disposed, to adsorb a metal nucleus contained in the metal compound into the amorphous silicon layer; a metal nucleus distribution region-forming step of forming a community region including a plurality of silicon particles every metal nucleus in a plane boundary region occupied by the metal compound by a self-limited mechanism due to the adsorption of the metal nucleus; and an excess gas removing step of purging and removing an excess gas which is not adsorbed in the metal nucleus distribution region-forming step.

Abstract: A holder manufacturing method for loading a substrate of a semiconductor manufacturing device, a batch type boat having the holder, a loading/unloading method of a semiconductor substrate using the same, and a semiconductor manufacturing device having the same are disclosed. For example, the manufacturing method of the holder of the boat for loading a semiconductor substrate includes the steps of molding a holder substrate of a pipe shape having inner and outer circumference of a predetermined size in such a manner that a lower portion of the semiconductor substrate is seated thereon; and forming a plurality of holder rings by cutting the holder rings from the holder substrate in such a manner that each holder ring is matched to a disposal interval of the semiconductor substrates in the boat.

Abstract: Disclosed is a device (200) and a method for measuring a receive sensitivity of a communication system having a transmit and receive path and a receive-only path, like a base station (100) employing space diversity by means of one transmit and receive antenna (111) and an additional receive antenna (121). A terminal (220) is connected to the transmit and receive path and to the receive-only path by means of a first (112) and a second coupler (122) and a first (213a) and a second transmitter (215a) whereby the input signals are combined by a combiner (211) to a single signal fed to the terminal (220).

Abstract: A selective and parallel growth method of carbon nanotube for electronic-spintronic device applications which directly grows a carbon nanotube on a wanted position toward a horizontal direction comprises the steps of: forming an insulating film on a board; forming fine patterns of catalyst metal layer including a contact electrode pad on the insulating film, forming a growth barrier layer for preventing vertical growth on upper part of the catalyst metal layer; and directly growing the carbon nanotube between the catalyst patterns.

Abstract: A fabrication method of metallic nanowires includes the steps of: forming a layer of autocatalytic metal with a thickness of 30 nm-1000 nm on the surface of a substrate; and forming nanowires on the front surface of the layer of autocatalytic metal, wherein the substrate is put into an evaporator and the layer of autocatalytic metal is grown by autocatalytic reaction for 10˜5000 seconds. A large amount of nanowires can be grown on a substrate without a lithography process.

Abstract: A fabrication method of metallic nanowires includes the steps of: forming a layer of autocatalytic metal with a thickness of 30 nm-1000 nm on the surface of a substrate; and forming nanowires on the front surface of the layer of autocatalytic metal, wherein the substrate is put into an evaporator and the layer of autocatalytic metal is grown by autocatalytic reaction for 10˜5000 seconds. A large amount of nanowires can be grown on a substrate without a lithography process.

Abstract: A selective and parallel growth method of carbon nanotube for electronic-spintronic device applications which directly grows a carbon nanotube on a wanted position toward a horizontal direction comprises the steps of: forming an insulating film on a board; forming fine patterns of catalyst metal layer including a contact electrode pad on the insulating film, forming a growth barrier layer for preventing vertical growth on upper part of the catalyst metal layer; and directly growing the carbon nanotube between the catalyst patterns.