Abstract: A membrane suitable for separating a gas from a gas mixture comprising a non cross-linked PVAm having a molecular weight of at least Mw 100,000 carried on a support wherein after casting onto the support, said PVAm has been heated to a temperature in the range 50 to 150° C., e.g. 80 to 120° C.

Abstract: A semiconductor device includes a plurality of semiconductor chips connected through a scribe lane; a plurality of through electrodes formed in each of the plurality of semiconductor chips; a heat dissipation member formed in the scribe lane; and heat transfer members connecting the through electrodes with the heat dissipation member.

Abstract: The bump structure includes a metal pattern disposed on an electrode pad to have a vertical sidewall and a recessed region surrounded by the vertical sidewalls, a metal post including a lower portion inserted into the recessed region and a protruded portion upwardly extending from the lower portion, and a passivation spacer on a sidewall of the metal post. The metal post is electrically connected to the electrode pad.

Abstract: Provided is a method for preparing monosilane, more particularly a method for economically preparing monosilane, which is useful for the composition of a thin semiconductor structure and multipurpose high-purity polycrystalline silicon, by preparing monosilane with high purity and high yield using trialkoxysilane.

Abstract: A semiconductor package includes a substrate and an optical communication part. A first chip stack part and a second chip stack part are disposed over the substrate and are separate from each other, and the optical communication part is disposed in a cavity formed in the substrate to provide an optical signal path between the first and second chip stack parts.

Abstract: A stacked semiconductor package includes a first semiconductor chip having one surface, and an other surface which faces away from the one surface, and first through electrodes which pass through the one surface and the other surface and project out of the other surface; a second semiconductor chip stacked over the one surface of the first semiconductor chip and having second through electrodes which are connected with the first through electrodes; a heat dissipation member disposed over the second semiconductor chip; and a first heat absorbing member disposed to face the other surface of the first semiconductor chip and defined with through holes into which projecting portions of the first through electrodes are inserted.

Abstract: Provided is a method for preparing monosilane, more particularly a method for economically preparing monosilane, which is useful for the composition of a thin semiconductor structure and multipurpose high-purity polycrystalline silicon, by preparing monosilane with high purity and high yield using trialkoxysilane.

Abstract: The bump structure includes a metal pattern disposed on an electrode pad to have a vertical sidewall and a recessed region surrounded by the vertical sidewalls, a metal post including a lower portion inserted into the recessed region and a protruded portion upwardly extending from the lower portion, and a passivation spacer on a sidewall of the metal post. The metal post is electrically connected to the electrode pad.

Abstract: A semiconductor package includes a substrate and an optical communication part. A first chip stack part and a second chip stack part are disposed over the substrate and are separate from each other, and the optical communication part is disposed in a cavity formed in the substrate to provide an optical signal path between the first and second chip stack parts.

Abstract: The bump structure includes a metal pattern disposed on an electrode pad to have a vertical sidewall and a recessed region surrounded by the vertical sidewalls, a metal post including a lower portion inserted into the recessed region and a protruded portion upwardly extending from the lower portion, and a passivation spacer on a sidewall of the metal post. The metal post is electrically connected to the electrode pad.

Abstract: A membrane suitable for separating a gas from a gas mixture comprising a non cross-linked PVAm having a molecular weight of at least Mw 100,000 carried on a support wherein after casting onto the support, said PVAm has been heated to a temperature in the range 50 to 150° C., e.g. 80 to 120° C.

Abstract: A membrane suitable for separating a gas from a gas mixture comprising a non cross-linked PVAm having a molecular weight of at least Mw 100,000 carried on a support wherein after casting onto the support, said PVAm has been heated to a temperature in the range 50 to 150° C., e.g. 80 to 120° C.

Abstract: The bump structure includes a metal pattern disposed on an electrode pad to have a vertical sidewall and a recessed region surrounded by the vertical sidewalls, a metal post including a lower portion inserted into the recessed region and a protruded portion upwardly extending from the lower portion, and a passivation spacer on a sidewall of the metal post. The metal post is electrically connected to the electrode pad.

Abstract: A semiconductor device includes a plurality of semiconductor chips connected through a scribe lane; a plurality of through electrodes formed in each of the plurality of semiconductor chips; a heat dissipation member formed in the scribe lane; and heat transfer members connecting the through electrodes with the heat dissipation member.

Abstract: A stacked semiconductor package includes a first semiconductor chip having one surface, and an other surface which faces away from the one surface, and first through electrodes which pass through the one surface and the other surface and project out of the other surface; a second semiconductor chip stacked over the one surface of the first semiconductor chip and having second through electrodes which are connected with the first through electrodes; a heat dissipation member disposed over the second semiconductor chip; and a first heat absorbing member disposed to face the other surface of the first semiconductor chip and defined with through holes into which projecting portions of the first through electrodes are inserted.

Abstract: A membrane suitable for separating a gas from a gas mixture comprising a non cross-linked PVAm having a molecular weight of at least Mw 100,000 carried on a support wherein after casting onto the support, said PVAm has been heated to a temperature in the range 50 to 150° C., e.g. 80 to 120° C.

Abstract: A membrane suitable for separating a gas, in particular carbon dioxide, from a gas mixture containing the gas is provided by a blend of polyvinyl alcohol (PVA) and polyvinylamine (PVAm).

Abstract: A fixed-site-membrane comprising a support structure coated with crosslinked polyvinylamine, wherein the crosslinking agent is a compound comprising a fluoride. The membrane comprises water, such as by being swelled in water vapour. A process for producing the membranes, and the use of such membranes for separation of carbon dioxide (CO2) from gas mixtures are disclosed.

Abstract: A membrane suitable for separating a gas, in particular carbon dioxide, from a gas mixture containing the gas is provided by a blend of polyvinyl alcohol (PVA) and polyvinylamine (PVAm).