Patents by Inventor Taek Lim

Taek Lim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor structure
    Patent number: 8872233
    Abstract: A semiconductor structure includes a barrier layer, a spacer structure, and a channel layer. The barrier layer includes a group III nitride. The spacer structure includes first and second aluminum nitride layers and an intermediate layer. The intermediate layer includes a group III nitride and is between the first and second aluminum nitride layers. The intermediate layer has a first free charge carrier density at an interface with the second aluminum nitride layer. The spacer structure is between the barrier layer and the channel layer. The channel layer includes a group III nitride and has a second free charge carrier density at an interface with the first aluminum nitride layer of the spacer structure. The first aluminum nitride layer, the intermediate layer, and the second aluminum nitride layer have layer thicknesses so the first free charge carrier density is less than 10% of the second free charge carrier density.
    Type: Grant
    Filed: March 14, 2012
    Date of Patent: October 28, 2014
    Assignee: Fraunhofer-Gesellschaft zur Foerderung der angewandten Forschung e.V.
    Inventors: Taek Lim, Rolf Aidam, Lutz Kirste, Ruediger Quay
  • SEMICONDUCTOR STRUCTURE
    Publication number: 20130181224
    Abstract: A semiconductor structure includes a barrier layer, a spacer structure, and a channel layer. The barrier layer includes a group III nitride. The spacer structure includes first and second aluminum nitride layers and an intermediate layer. The intermediate layer includes a group III nitride and is between the first and second aluminum nitride layers. The intermediate layer has a first free charge carrier density at an interface with the second aluminum nitride layer. The spacer structure is between the barrier layer and the channel layer. The channel layer includes a group III nitride and has a second free charge carrier density at an interface with the first aluminum nitride layer of the spacer structure. The first aluminum nitride layer, the intermediate layer, and the second aluminum nitride layer have layer thicknesses so the first free charge carrier density is less than 10% of the second free charge carrier density.
    Type: Application
    Filed: March 14, 2012
    Publication date: July 18, 2013
    Applicant: Fraunhofer-Gesellschaft zur Foerderung der angewandten Forschung e.V.
    Inventors: Taek LIM, Rolf AIDAM, Lutz KIRSTE, Ruediger QUAY
  • Antioxidant Fermenting Microorganism Agent Reducing Volatile Organic Compounds From Polyurethane Foam, and Urethane Foam Comprising the Same
    Publication number: 20090004718
    Abstract: Disclosed is an antioxidant fermenting microorganism agent and a polyurethane foam including the same. The antioxidant fermenting microorganism agent is used to generate a substance that is capable of reducing an amount of volatile organic compounds generated from the polyurethane foam and has an antimicrobial ability. The polyurethane foam containing the antioxidant fermenting microorganism according to the present invention can be used as the material for the interior of a vehicle to protect humans from noxious substances causing sick car syndrome.
    Type: Application
    Filed: May 9, 2007
    Publication date: January 1, 2009
    Applicants: DYMOS INC., SEOUL NATIONAL UNIVERSITY INDUSTRY FOUNDATION
    Inventors: Taek Lim, Jae-Yong Ko, Eun-Ju Lee, In-Sung Kim, Chang-Hong Lee