Abstract: An actuator for a vehicle coolant control valve according to the present invention includes: a drive unit to generate driving power; an output unit to drive a control valve, which selectively opens/closes a coolant flow for a vehicle using the driving power provided by the drive unit; and a sensing unit to sense an output condition of the output unit, wherein the sensing unit is provided with a position sensor to sense a position of the output unit and an electro-magnetic compatibility (EMC) filter to filer EMC. According to the above configuration, a single printed circuit board may have a function of an EMC board and a function of a sensor board, which are advantageous in ensuring space and design freedom to thus contribute to improvement of control quality.

Abstract: An actuator for a vehicle coolant control valve according to the present invention includes: a drive unit to generate driving power; an output unit to drive a control valve, which selectively opens/closes a coolant flow for a vehicle using the driving power provided by the drive unit; and a sensing unit to sense an output condition of the output unit, wherein the sensing unit is provided with a position sensor to sense a position of the output unit and an electro-magnetic compatibility (EMC) filter to filer EMC. According to the above configuration, a single printed circuit board may have a function of an EMC board and a function of a sensor board, which are advantageous in ensuring space and design freedom to thus contribute to improvement of control quality.

Abstract: A semiconductor memory apparatus includes a memory cell. The semiconductor apparatus includes a current supply circuit configured to change a resistance state of the memory cell, by changing an amount of current flowing through the memory cell, with or without limiting a voltage level across the memory cell to a level of a clamping voltage based on a state of the memory cell.

Abstract: A semiconductor memory apparatus includes a memory cell. The semiconductor apparatus includes a current supply circuit configured to change a resistance state of the memory cell, by changing an amount of current flowing through the memory cell, with or without limiting a voltage level across the memory cell to a level of a clamping voltage based on a state of the memory cell.

Abstract: The present disclosure provides a pneumatic valve for vehicle. The pneumatic valve includes: a valve housing having a flow passage through which air flows; a core fixed to the center of the flow passage; a plunger that is disposed to face an end of the core and moves along the flow passage; and a damper made of an elastic material that is disposed at one end of the plunger facing the end of the core, and comes into contact with the end of the core by movement of the plunger.

Abstract: This patent is provided a method for producing a porous polymer film using vanadium oxide nanowires, and a porous polymer film obtained from the method. The method allows control of a uniform pore size and density through a simple process including the steps of: adding an ion exchanger to deionized water to perform acidification and adding a vanadate compound thereto to grow vanadium oxide nanowires by a sol-gel process; mixing the resultant solution of grown nanowires with a polymer solution to provide a mixed solution of nanowires; pouring the mixed solution of nanowires to a mold, followed by drying and curing, to form a film; and etching the resultant film with an etching solution to remove the vanadium oxide nanowires.

Abstract: The present disclosure relates to a pneumatic valve for a vehicle. The pneumatic valve includes: a valve housing having a channel for air to flow therein and having a first end where an exhaust port communicating with the channel and an exhaust nipple are formed; a core fixed to a second end of the valve housing and sending air flowing inside from outside to the channel; a check valve disposed at a first end of the core, passing air flowing to the channel from the outside through the core, and blocking air flowing to the outside from the channel through the core; a plunger disposed to face the first end of the core and moving through the channel; and a sealing member disposed at a first end of the plunger and opening or closing the exhaust port by moving with the plunger.

Abstract: The present disclosure provides a pneumatic valve for vehicle. The pneumatic valve includes: a valve housing having a flow passage through which air flows; a core fixed to the center of the flow passage; a plunger that is disposed to face an end of the core and moves along the flow passage; and a damper made of an elastic material that is disposed at one end of the plunger facing the end of the core, and comes into contact with the end of the core by movement of the plunger.

Abstract: A piezoelectric valve operated by voltage and a method of manufacturing the piezoelectric valve. The piezoelectric valve includes: a valve body; a valve unit; a plate-shaped piezoelectric element; an insulation stick for insulating the piezoelectric element; an adjustment bolt attached to the valve body with the insulation stick fitted over the bolt; an elastic body elastically supporting the insulation stick; an adjustment nut tightened to the adjustment bolt for moving along the bolt by rotation of the bolt so as to displace the insulation stick and an end of the piezoelectric element by pushing the insulation stick; and an adjuster for moving the adjustment nut along the adjustment bolt by a pivoting of the adjustment bolt, thereby adjusting a pushing force of the insulation stick. The piezoelectric valve can reduce economic loss in manufactured valves because the valve flow rate can be adjusted even after assembling the valve body.

Abstract: Disclosed is a pneumatic valve for a vehicle that includes a valve housing that has an intake hole in an intake unit at one end, an exhaust hole and a relief hole in an exhaust unit at another end, and a channel through which air flows therein. An intake plunger selectively opens and closes the intake hole by sliding in the channel of the valve housing. A relief plunger selectively opens and closes the relief hole by sliding in the channel of the valve housing. An intake coil is disposed outside the valve housing and slides the intake plunger using an electromagnetic force; and a relief coil is disposed outside the valve housing and slides the relief plunger using an electromagnetic force.

Abstract: A piezoelectric valve operated by voltage and a method of manufacturing the piezoelectric valve. The piezoelectric valve includes: a valve body; a valve unit; a plate-shaped piezoelectric element; an insulation stick for insulating the piezoelectric element; an adjustment bolt attached to the valve body with the insulation stick fitted over the bolt; an elastic body elastically supporting the insulation stick; an adjustment nut tightened to the adjustment bolt for moving along the bolt by rotation of the bolt so as to displace the insulation stick and an end of the piezoelectric element by pushing the insulation stick; and an adjuster for moving the adjustment nut along the adjustment bolt by a pivoting of the adjustment bolt, thereby adjusting a pushing force of the insulation stick. The piezoelectric valve can reduce economic loss in manufactured valves because the valve flow rate can be adjusted even after assembling the valve body.

Abstract: This patent is provided a method for producing a porous polymer film using vanadium oxide nanowires, and a porous polymer film obtained from the method. The method allows control of a uniform pore size and density through a simple process including the steps of: adding an ion exchanger to deionized water to perform acidification and adding a vanadate compound thereto to grow vanadium oxide nanowires by a sol-gel process; mixing the resultant solution of grown nanowires with a polymer solution to provide a mixed solution of nanowires; pouring the mixed solution of nanowires to a mold, followed by drying and curing, to form a film; and etching the resultant film with an etching solution to remove the vanadium oxide nanowires.

Abstract: A semiconductor memory device measures a leakage current generated when a unit cell is accessed during a test process. The semiconductor memory device includes a unit cell configured to include a memory element, a word line configured to be coupled to one end of the unit cell, and a bit line configured to be coupled to the other end of the unit cell. In a normal operation, a current signal flows from the bit line to the word line through the unit cell such that data stored in the memory element is read. In a test operation, the word line is deactivated and a read operation is carried out such that data stored in the memory element is read.

Abstract: A sensing characteristic evaluating apparatus for a semiconductor device includes a test current supply unit configured to supply a test current to an input/output line during a test mode for evaluating a sensing characteristic, and a sensing amplifying circuit configured to receive the test current from the input/output line, to compare and amplify a sensing input voltage corresponding to the test current with a reference voltage, and to output an amplified voltage as a sensing output voltage.

Abstract: A semiconductor memory device measures a leakage current generated when a unit cell is accessed during a test process. The semiconductor memory device includes a unit cell configured to include a memory element, a word line configured to be coupled to one end of the unit cell, and a bit line configured to be coupled to the other end of the unit cell. In a normal operation, a current signal flows from the bit line to the word line through the unit cell such that data stored in the memory element is read. In a test operation, the word line is deactivated and a read operation is carried out such that data stored in the memory element is read.

Abstract: A semiconductor integrated circuit for supporting a test mode includes a program region including at least one One Time Programmable Cell Array, and a program region control unit configured to activate the program region in response to an enabled fuse signal of a fuse corresponding to the program region, and to activate the program region in response to a test mode signal of the program region.

Abstract: A semiconductor integrated circuit includes a write controlling circuit configured to selectively provide a fixed pulse or a variable pulse according to a level of a test mode signal in a write operation mode, thereby adjusting a pulse width of an internal write pulse that is a current pulse driving an internal memory cell in response to the fixed pulse or the variable pulse.

Abstract: A write driving circuit is provided to drive a global input/output line to write same data to memory cells according to a combination of a first test data signal and a second test data signal in a test mode, regardless of input data signals.

Abstract: A sensing characteristic evaluating apparatus for a semiconductor device includes a test current supply unit configured to supply a test current to an input/output line during a test mode for evaluating a sensing characteristic, and a sensing amplifying circuit configured to receive the test current from the input/output line, to compare and amplify a sensing input voltage corresponding to the test current with a reference voltage, and to output an amplified voltage as a sensing output voltage.

Abstract: A semiconductor integrated circuit for supporting a test mode includes a program region including at least one One Time Programmable Cell Array, and a program region control unit configured to activate the program region in response to an enabled fuse signal of a fuse corresponding to the program region, and to activate the program region in response to a test mode signal of the program region.