Abstract: An embodiment includes a method of texturing a semiconductor substrate, a semiconductor substrate manufactured using the method, and a solar cell including the semiconductor substrate, the method including: forming metal nanoparticles on a semiconductor substrate, primarily etching the semiconductor substrate, removing the metal nanoparticles, and secondarily etching the primarily etched semiconductor substrate to form nanostructures.

Abstract: An embodiment includes a method of texturing a semiconductor substrate, a semiconductor substrate manufactured using the method, and a solar cell including the semiconductor substrate, the method including: forming metal nanoparticles on a semiconductor substrate, primarily etching the semiconductor substrate, removing the metal nanoparticles, and secondarily etching the primarily etched semiconductor substrate to form nanostructures.

Abstract: A method for fabricating a nanoantenna array may include forming a resist layer on a substrate, forming a focusing layer having a dielectric microstructure array on the resist layer, diffusing light one-dimensionally in a specific direction by using a linear diffuser, forming an anisotropic pattern on the resist layer by illuminating the light diffused by the linear diffuser on the focusing layer and the resist layer, depositing a material suitable for a plasmonic resonance onto the substrate and the resist layer on which the pattern is formed, and forming a nanoantenna array on the substrate by removing the resist layer and the material deposited on the resist layer. A light diffusing angle by the linear diffuser and a size of the dielectric microstructure are determined based on an aspect ratio of the pattern to be formed.

Abstract: A plasmonic nano-color coating layer includes a composite layer including a plurality of metal particle layers and a plurality of matrix layers and having a periodic multilayer structure in which the metal particle layers and the matrix layers are alternately arranged, a dielectric buffer layer located below the composite layer, and a mirror layer located below the dielectric buffer layer, wherein the color of the plasmonic nano-color coating layer is determined based on a nominal thickness of the metal particle layer and a separation between the metal particle layers.

Abstract: A fiber-optic surface plasmon resonance sensor may include an optical fiber and a surface plasmon excitation layer. The optical fiber may include a core, a cladding surrounding the core, and a depression. The surface plasmon excitation layer may include a first excitation layer, a second excitation layer and an optical waveguide layer between the first excitation layer and the second excitation layer. Incident light incident through the core may be coupled to the surface plasmon excitation layer at a specific angle of incidence and wavelength satisfying the surface plasmon resonance condition. Depending on the polarizing direction of the incident light, an s-polarized component may be coupled to the guided-wave mode in the optical waveguide layer constituting the surface plasmon excitation layer.

Abstract: A method for fabricating a nanoantenna array may include forming a resist layer on a substrate, forming a focusing layer having a dielectric microstructure array on the resist layer, diffusing light one-dimensionally in a specific direction by using a linear diffuser, forming an anisotropic pattern on the resist layer by illuminating the light diffused by the linear diffuser on the focusing layer and the resist layer, depositing a material suitable for a plasmonic resonance onto the substrate and the resist layer on which the pattern is formed, and forming a nanoantenna array on the substrate by removing the resist layer and the material deposited on the resist layer. A light diffusing angle by the linear diffuser and a size of the dielectric microstructure are determined based on an aspect ratio of the pattern to be formed.

Abstract: A plasmonic nano-color coating layer includes a composite layer including a plurality of metal particle layers and a plurality of matrix layers and having a periodic multilayer structure in which the metal particle layers and the matrix layers are alternately arranged, a dielectric buffer layer located below the composite layer, and a mirror layer located below the dielectric buffer layer, wherein the color of the plasmonic nano-color coating layer is determined based on a nominal thickness of the metal particle layer and a separation between the metal particle layers.

Abstract: Provided is a surface plasmon resonance sensor including: a part of delivering light by which a signal beam is incident to generate an evanescent field; and a part of exciting surface plasmon for exciting surface plasmons by the generated evanescent field and giving rise to a surface plasmon resonance, wherein a dielectric waveguide layer is inserted between metal layers of the part of exciting surface plasmon, and surface plasmon resonance properties are changed by an object to be analyzed.

Abstract: A localized surface plasmon resonance sensor may include a localized surface plasmon excitation layer including a chalcogenide material. The chalcogenide material may include: a first material including at least one of selenium (Se) and tellurium (Te); and a second material including at least one of germanium (Ge) and antimony (Sb). The localized surface plasmon excitation layer may be prepared by forming a thin film including the chalcogenide material and crystallizing the thin film to have a predetermined pattern by irradiating laser on the thin film.

Abstract: A fiber-optic surface plasmon resonance sensor may include an optical fiber and a surface plasmon excitation layer. The optical fiber may include a core, a cladding surrounding the core, and a depression. The surface plasmon excitation layer may include a first excitation layer, a second excitation layer and an optical waveguide layer between the first excitation layer and the second excitation layer. Incident light incident through the core may be coupled to the surface plasmon excitation layer at a specific angle of incidence and wavelength satisfying the surface plasmon resonance condition. Depending on the polarizing direction of the incident light, an s-polarized component may be coupled to the guided-wave mode in the optical waveguide layer constituting the surface plasmon excitation layer.

Abstract: The present invention relates to a high sensitivity localized surface plasmon resonance sensor and to a sensor system using same, the sensor comprising: a first metal layer including a first metal; a second metal layer arranged parallel to the first metal layer and including a second metal; and a conductive cross-linking layer disposed between the first metal layer and the second metal layer, and made of a third metal with a corrosion response that is different than that of the first metal and of the second metal.

Abstract: Disclosed is a method for growing a thin film, which includes modifying a surface grain size and surface roughness on a thin film to improve the mobility of a carrier and a light scattering effect. The method for growing a thin film includes: forming nuclei of grains having various grain orientations on a substrate; causing first grains having a first specific grain orientation to grow predominantly among the grains having various grain orientations, thereby forming a first preferred texture comprised of the predominantly grown first grains; and then causing second grains having a second grain orientation to grow predominantly, thereby forming a second preferred texture comprised of the predominantly grown second grains, wherein the surface grain size of each of the second grains forming the second texture is larger than that of each of the first grains forming the first texture.

Abstract: The present invention relates to a high sensitivity localized surface plasmon resonance sensor and to a sensor system using same, the sensor comprising: a first metal layer including a first metal; a second metal layer arranged parallel to the first metal layer and including a second metal; and a conductive cross-linking layer disposed between the first metal layer and the second metal layer, and made of a third metal with a corrosion response that is different than that of the first metal and of the second metal.

Abstract: A super-resolution optical recording medium includes a reflective layer formed on a substrate, a recording layer for recording information thereon, a super-resolution layer made of a chalcogenide semiconductor material, and a first and a second dielectric layers laminated on upper and lower surfaces of the super-resolution layer. The recording layer is made of a material that has a decomposition temperature higher than an information reproduction temperature and does not form bubble recording marks during recording, and the super-resolution layer contains one or more elements selected from the group consisting of nitrogen, oxygen, carbon, and boron.

Abstract: A super-resolution material for recording and reproducing optical information, comprises a semiconductor material which has a transmittance that increases with an increasing intensity of the incident radiation, and one or more elements selected from the group consisting of nitrogen (N), oxygen (O), carbon (C) and boron (B).

Abstract: The present invention provides a non-volatile phase change memory cell containing an electrode contact layer disposed between a metal electrode layer and a phase change material layer, the electrode contact layer being formed of a transparent conducting oxide-based material which has a high electric conductivity, a low thermal conductivity and a good thermal stability. A non-volatile phase change memory cell according to the present invention may be utilized to reduce the electric power needed for reset and set operation.

Abstract: The present invention relates to a non-volatile electrical phase change memory device comprising a substrate, a first interlayer dielectric film deposited on the substrate, a bottom electrode layer formed on the first dielectric layer, a second interlayer dielectric film formed on the bottom electrode layer, a phase change material layer deposited on the second interlayer dielectric film, and a top electrode layer formed on said phase change material layer, the bottom electrode layer being brought into contact with the phase change material layer through a contact hole which is formed in the second interlayer dielectric film and filled with the phase change material or bottom electrode material, so that the phase change layer and the bottom electrode layer come into close contact with each other, wherein an interfacial control layer is formed at the interface of the contact hole between the phase change layer and the bottom electrode layer, said interfacial control layer having strong chemical bonds with the

Abstract: An optical data storage medium comprises a super-resolution (SR) layer consisting of thermoelectric material, said SR layer having light absorption, transmittance and reflectance at the wavelength of an incident light and maintaining a crystalline single phase without a structural or chemical change below the melting temperature of the material. SR readout of data from and/or SR writing of data onto the medium is carried out by way of thermoelectrically induced optical changes within a local area of the SR layer under laser irradiation.

Abstract: Provided is a surface plasmon resonance sensor including: a part of delivering light by which a signal beam is incident to generate an evanescent field; and a part of exciting surface plasmon for exciting surface plasmons by the generated evanescent field and giving rise to a surface plasmon resonance, wherein a dielectric waveguide layer is inserted between metal layers of the part of exciting surface plasmon, and surface plasmon resonance properties are changed by an object to be analyzed.

Abstract: A phase change memory apparatus includes a phase change memory array in which a plurality of phase change memory devices are arranged, and a pulse generator that supplies a writing current pulse, an erasure current pulse, and a reverse repair current pulse to the phase change memory devices in the phase change memory array. The reverse repair current pulse has opposite direction to the writing current pulse and the erasure current pulse of the phase change memory devices, and is of such a size that resultant Joule heat and electromigration move the elements of the reverse repair current pulse. The reverse repair current pulse has a width equal to or more than a smaller one of duration of a normal writing operation and duration of a normal erasure operation.