Abstract: An Extreme UltraViolet (EUV) mask includes: a reflective layer over a substrate; a capping layer including a porous hydrogen trapping layer over the reflective layer; and an absorption layer over the capping layer.

Abstract: A complex number quantization-based audio signal encoding method may comprise: estimating a scale factor for each subband of an input audio signal; performing complex magnitude scaling for each subband based on the scale factor; and performing polar quantization on a complex frequency coefficient for each subband, wherein the performing the polar quantization for each subband comprises applying two or more different magnitude quantization techniques based on the magnitude of the complex frequency coefficient scaled for each subband.

Abstract: A method of generating a residual signal performed by an encoder includes identifying an input signal including an audio sample, generating a first residual signal from the input signal using linear predictive coding (LPC), generating a second residual signal having a less information amount than the first residual signal by transforming the first residual signal, transforming the second residual signal into a frequency domain, and generating a third residual signal having a less information amount than the second residual signal from the transformed second residual signal using frequency-domain prediction (FDP) coding.

Abstract: An audio signal encoding/decoding method and an apparatus for performing the same are disclosed. The audio signal encoding method includes obtaining a full-band input signal, extracting a first feature vector corresponding to a first sub-band signal and a second feature vector corresponding to a second sub-band signal using an encoder neural network including a plurality of encoding layers, generating a first code vector corresponding to the first feature vector and a second code vector corresponding to the second feature vector by compressing the first feature vector and the second feature vector, and generating a bitstream by quantizing the first code vector and the second code vector.

Abstract: Provided is an encoding apparatus including a memory configured to store instructions and a processor electrically connected to the memory and configured to execute the instructions, wherein the processor may be configured to perform a plurality of operations, when the instructions are executed by the processor, wherein the plurality of operations may include obtaining an input audio signal, generating an embedded audio signal by embedding signal components of a second frequency band of the input audio signal in a first frequency band of the input audio signal, generating additional information associated with the first frequency band and the second frequency band, generating an encoded audio signal by encoding the embedded audio signal, and formatting the encoded audio signal and the additional information into a bitstream.

Abstract: An embodiment hammer device includes a driver, an upper body configured to move in a direction set by power generated from the driver, an elastic body provided on the upper body, a hammer provided in the elastic body, a force sensor provided in the hammer, and a support configured to support the elastic body and the hammer.

Abstract: An encoding/decoding apparatus and method for controlling a channel signal is disclosed, wherein the encoding apparatus may include an encoder to encode an object signal, a channel signal, and rendering information for the channel signal, and a bit stream generator to generate, as a bit stream, the encoded object signal, the encoded channel signal, and the encoded rendering information for the channel signal.

Abstract: Provided is an encoding apparatus for integrally encoding and decoding a speech signal and a audio signal, and may include: an input signal analyzer to analyze a characteristic of an input signal; a stereo encoder to down mix the input signal to a mono signal when the input signal is a stereo signal, and to extract stereo sound image information; a frequency band expander to expand a frequency band of the input signal; a sampling rate converter to convert a sampling rate; a speech signal encoder to encode the input signal using a speech encoding module when the input signal is a speech characteristics signal; a audio signal encoder to encode the input signal using a audio encoding module when the input signal is a audio characteristic signal; and a bitstream generator to generate a bitstream.

Abstract: A display apparatus according to a concept of the disclosure includes: a display panel configured to display an image in a front direction; a top chassis positioned in a front direction of the display panel; a bottom chassis positioned in a rear direction of the display panel; a rear cover covering a rear side of the bottom chassis; and a stand member being accommodatable in the rear cover and selectively coupled with a rear surface of the rear cover, wherein the rear cover includes an accommodating portion in which the stand member is accommodated and a coupling portion coupled with the stand member, and the stand member includes an inserting protrusion which is inserted into the accommodating portion and the coupling portion.

Abstract: Disclosed is an LPC residual signal encoding/decoding apparatus of an MDCT based unified voice and audio encoding device. The LPC residual signal encoding apparatus analyzes a property of an input signal, selects an encoding method of an LPC filtered signal, and encode the LPC residual signal based on one of a real filterbank, a complex filterbank, and an algebraic code excited linear prediction (ACELP).

Abstract: Disclosed is an apparatus and method for audio encoding/decoding that is robust against coding distortion in a transition section. An audio encoding method includes outputting a frequency domain signal by time-to-frequency (T/F) transform of an input signal, outputting a frequency domain residual signal in which a frequency axis envelope is removed from the frequency domain signal by applying frequency domain noise shaping (FDNS) encoding to the frequency domain signal, outputting a time domain residual signal in which a time axis envelope is removed by performing linear prediction coefficient (LPC) analysis based on the frequency domain residual signal, and quantizing and transmitting the time domain residual signal.

Abstract: Provided are embodiments of a pressure-compensated load transfer device that includes a plate having a first shaft vertically installed on one side and a second shaft vertically installed on the other side to be coaxial with the first shaft. Also included is a first bellows having an opening in one side to surround the first shaft, with the other side thereof being fixed to the one side of the plate. Further included is a plurality of second bellows each having an opening in one end, with the other end thereof being attached to the other side of the plate. A housing is also included, and the housing includes a high-pressure working hole communicating with the opening of the first bellows and a high-pressure channel coplanar with the high-pressure working hole and communicating with the openings of the second bellows. The plate is back-and-forth movably received in the housing.

Abstract: Provided are embodiments of a pressure-compensated load transfer device that includes a plate having a first shaft vertically installed on one side and a second shaft vertically installed on the other side to be coaxial with the first shaft. Also included is a first bellows having an opening in one side to surround the first shaft, with the other side thereof being fixed to the one side of the plate. Further included is a plurality of second bellows each having an opening in one end, with the other end thereof being attached to the other side of the plate. A housing is also included, and the housing includes a high-pressure working hole communicating with the opening of the first bellows and a high-pressure channel coplanar with the high-pressure working hole and communicating with the openings of the second bellows. The plate is back-and-forth movably received in the housing.

Abstract: The present invention describes a method of measurement of pyrosequencing accuracy by directly calculating sequence errors from FLX Titanium pyrosequencing using mock community, according to the present invention, sequencing errors from FLX Titanium pyrosequencing in terms of microbial diversity and classification can be measured, resulting in possible effects of filtering.

Abstract: The present invention relates to a semiconductor device with an epitaxially grown titanium silicide layer having a phase of C49 and a method for fabricating the same. This titanium silicide layer has a predetermined interfacial energy that does not transform the phase of the titanium layer, and thus, occurrences of agglomeration of the titanium layer and a grooving phenomenon can be prevented. The semiconductor device includes: a silicon layer; an insulation layer formed on the silicon layer, wherein a partial portion of the insulation layer is opened to form a contact hole exposing a partial portion of the silicon layer; an epitaxially grown titanium silicide layer having a phase of C49 and formed on the exposed silicon substrate disposed within the contact hole; and a metal layer formed on an upper surface of the titanium silicide layer.

Abstract: A method for fabricating a semiconductor device includes forming a pattern including a first layer including tungsten, performing a gas flowing process on the pattern in a gas ambience including nitrogen, and forming a second layer over the pattern using a source gas including nitrogen, wherein the purge is performed at a given temperature for a given period of time in a manner that a reaction between the first layer and the nitrogen used when forming the second layer is controlled.

Abstract: The present invention relates to a semiconductor device with an epitaxially grown titanium silicide layer having a phase of C49 and a method for fabricating the same. This titanium silicide layer has a predetermined interfacial energy that does not transform the phase of the titanium layer, and thus, occurrences of agglomeration of the titanium layer and a grooving phenomenon can be prevented. The semiconductor device includes: a silicon layer; an insulation layer formed on the silicon layer, wherein a partial portion of the insulation layer is opened to form a contact hole exposing a partial portion of the silicon layer; an epitaxially grown titanium silicide layer having a phase of C49 and formed on the exposed silicon substrate disposed within the contact hole; and a metal layer formed on an upper surface of the titanium silicide layer.

Abstract: A method for fabricating a semiconductor device includes forming a pattern including a first layer including tungsten, performing a gas flowing process on the pattern in a gas ambience including nitrogen, and forming a second layer over the pattern using a source gas including nitrogen, wherein the purge is performed at a given temperature for a given period of time in a manner that a reaction between the first layer and the nitrogen used when forming the second layer is controlled.

Abstract: The present invention relates to a semiconductor device with an epitaxially grown titanium silicide layer having a phase of C49 and a method for fabricating the same. This titanium silicide layer has a predetermined interfacial energy that does not transform the phase of the titanium layer, and thus, occurrences of agglomeration of the titanium layer and a grooving phenomenon can be prevented. The semiconductor device includes: a silicon layer; an insulation layer formed on the silicon layer, wherein a partial portion of the insulation layer is opened to form a contact hole exposing a partial portion of the silicon layer; an epitaxially grown titanium silicide layer having a phase of C49 and formed on the exposed silicon substrate disposed within the contact hole; and a metal layer formed on an upper surface of the titanium silicide layer.

Abstract: The present invention relates to a semiconductor device with an epitaxially grown titanium silicide layer having a phase of C49 and a method for fabricating the same. This titanium silicide layer has a predetermined interfacial energy that does not transform the phase of the titanium layer, and thus, occurrences of agglomeration of the titanium layer and a grooving phenomenon can be prevented. The semiconductor device includes: a silicon layer; an insulation layer formed on the silicon layer, wherein a partial portion of the insulation layer is opened to form a contact hole exposing a partial portion of the silicon layer; an epitaxially grown titanium silicide layer having a phase of C49 and formed on the exposed silicon substrate disposed within the contact hole; and a metal layer formed on an upper surface of the titanium silicide layer.