Abstract: A method for producing a capacitive pressure sensor is comprised steps of: etching front surface and depositing etching stopper on a rear surface of a silicon substrate; depositing an upper electrode on etching stopper; depositing insulating surface on the upper electrode surface; depositing a lower electrode on the insulating surface to form a capacitor; forming a metal pad electrode on the front glass substrate; hybrid-bonding lower electrode of the capacitor of silicon substrate to the metal pad electrode of glass substrate using an anodic bonding method; etching rear surface of silicon substrate bonded to the glass substrate to selectively expose the etching stopper to form a membrane; and removing the exposed region of etching stopper by wet etching. Thus, the output of the capacitive pressure sensor is linearly varied according to the input, which is used hafnium oxide having a high dielectric constant as an insulating material to provide high capacitance and improve the sensitivity.

Abstract: A capacitive pressure sensor and a method for fabricating a capacitive pressure sensor are provided.