Patents by Inventor Taesoon Duyeon KWON

Taesoon Duyeon KWON has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10461195
    Abstract: Disclosed is a semiconductor device. The semiconductor device includes a substrate, channel semiconductor patterns vertically stacked and spaced apart from each other on the substrate, a gate electrode running across the channel semiconductor patterns, source/drain regions at opposite sides of the gate electrode, the source/drain regions being connected to the channel semiconductor patterns, and air gaps between the substrate and bottom surfaces of the source/drain regions so that the bottom surfaces of the source/drain regions do not contact the substrate.
    Type: Grant
    Filed: January 8, 2018
    Date of Patent: October 29, 2019
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Taesoon Duyeon Kwon, JeongYun Lee, A-reum Ji, Kyungseok Min, GeumJung Seong
  • Publication number: 20180301564
    Abstract: Disclosed is a semiconductor device. The semiconductor device includes a substrate, channel semiconductor patterns vertically stacked and spaced apart from each other on the substrate, a gate electrode running across the channel semiconductor patterns, source/drain regions at opposite sides of the gate electrode, the source/drain regions being connected to the channel semiconductor patterns, and air gaps between the substrate and bottom surfaces of the source/drain regions so that the bottom surfaces of the source/drain regions do not contact the substrate.
    Type: Application
    Filed: January 8, 2018
    Publication date: October 18, 2018
    Inventors: Taesoon Duyeon KWON, JeongYun LEE, A-reum JI, Kyungseok MIN, GeumJung SEONG