Abstract: According to an embodiment, a processor of an electronic device is configured to identify the direction of the electronic device using a sensor of the electronic device. The processor outputs an acoustic signal representing a vibration notification for a preset event through a speaker of the electronic device, based on identifying a direction corresponding to a reference direction for representing the vibration notification for the preset event using the speaker. The processor is configured to refrain from outputting the acoustic signal through the speaker based on identifying the direction different from the reference direction, and vibrate the housing using the haptic actuator of the electronic device to output the vibration notification regarding the preset event.

Abstract: Provided are a device and method of setting a communication channel of an overhead hoist transfer (OHT), and a computer program stored in a recording medium to execute the method. The method of setting a communication channel of an OHT includes checking, by a master parallel input/output (PIO) provided in the OHT, a logistics transfer task command of the OHT, checking, by the master PIO, position information corresponding to the logistics transfer task command, based on the logistics transfer task command, checking, by the master PIO, unique number information of a slave PIO corresponding to the logistics transfer task command, based on the logistics transfer task command and the position information, and setting, by the master PIO, a communication channel between the master PIO and the slave PIO, based on the unique number information of the slave PIO.

Abstract: An electronic device includes a first component included in the electronic device; a port configured to connect to an external power source; a battery; and a processor configured to: select an object to supply power to the first component included in the electronic device; and perform control so as to provide, using the selected object, power to the first component included in the electronic device.

Abstract: An electronic device may include: a memory, a display, a haptic module comprising haptic circuitry, a sound module comprising audio circuitry, and a processor. The processor may be configured to: detect an event for an output of vibration and sound, delay the output of the vibration, change a sound output mode from a first mode to a second mode for fast output while the output of the vibration is delayed, output the sound using the sound module in the second mode, and output the delayed vibration through the haptic module to be synchronized with the output of the sound. As the sound output mode is changed to the second mode, a sound output path may be opened. The sound output path may be changed from the first path for non-fast output to the second path for fast output.

Abstract: An electronic device is provided. The electronic device includes a display, a communication module, a memory, and a processor, wherein the processor is configured to receive a vibration output request, detect vibration-related situation information, and generate vibration output information corresponding to the detected vibration-related situation information. The vibration-related situation information includes at least one from among information on at least one external electronic device connected to the electronic device, whether a specific application is being executed, and whether a specific function of the electronic device is being executed, and the vibration output information may include at least one from among vibration intensity, a vibration pattern, output device selection information, and priorities in the vibration-related situation information.

Abstract: An electronic device includes a universal serial bus (USB) port configured to be wiredly attached to an external audio device, a processor operatively connected to the USB port, and a memory operatively connected to the processor. The memory stores a media application to play audio data, and stores instructions that when executed, cause the processor to play the audio data through the media application, sense an event associated with detachment from the external audio device while the audio data is being played, pause playing the audio data, in response to that the event is sensed, identify whether a device the same as the external audio device is attached within a specified time after the event is sensed, and play the audio data, which is paused, through the media application, when the device the same as the external audio device is attached within the specified time.

Abstract: An electronic device includes a universal serial bus (USB) port configured to be wiredly attached to an external audio device, a processor operatively connected to the USB port, and a memory operatively connected to the processor. The memory stores a media application to play audio data, and stores instructions that when executed, cause the processor to play the audio data through the media application, sense an event associated with detachment from the external audio device while the audio data is being played, pause playing the audio data, in response to that the event is sensed, identify whether a device the same as the external audio device is attached within a specified time after the event is sensed, and play the audio data, which is paused, through the media application, when the device the same as the external audio device is attached within the specified time.

Abstract: A thin-film transistor according to an exemplary embodiment of the present invention comprises an active layer; an intermediate layer; a gate insulating film; a gate electrode; an interlayer insulating film; and source and drain electrodes. The active layer is positioned on a substrate, and the gate insulating film is positioned on the active layer. The gate electrode is positioned on the gate insulating film, and the interlayer insulating film is positioned on the gate electrode. The source and drain electrodes are positioned on the interlayer insulating film and connected to the active layer. The intermediate layer is positioned between the active layer and the gate insulating film, and made of an oxide semiconductor comprising a Group IV element.

Abstract: a thin-film transistor according to an exemplary embodiment of the present invention comprises an active layer; an intermediate layer; a gate insulating film; a gate electrode; an interlayer insulating film; and source and drain electrodes. The active layer is positioned on a substrate, and the gate insulating film is positioned on the active layer. The gate electrode is positioned on the gate insulating film, and the interlayer insulating film is positioned on the gate electrode. The source and drain electrodes are positioned on the interlayer insulating film and connected to the active layer. The intermediate layer is positioned between the active layer and the gate insulating film, and made of an oxide semiconductor comprising a Group IV element.

Abstract: a thin-film transistor according to an exemplary embodiment of the present invention comprises an active layer; an intermediate layer; a gate insulating film; a gate electrode; an interlayer insulating film; and source and drain electrodes. The active layer is positioned on a substrate, and the gate insulating film is positioned on the active layer. The gate electrode is positioned on the gate insulating film, and the interlayer insulating film is positioned on the gate electrode. The source and drain electrodes are positioned on the interlayer insulating film and connected to the active layer. The intermediate layer is positioned between the active layer and the gate insulating film, and made of an oxide semiconductor comprising a Group IV element.

Abstract: a thin-film transistor according to an exemplary embodiment of the present invention comprises an active layer; an intermediate layer; a gate insulating film; a gate electrode; an interlayer insulating film; and source and drain electrodes. The active layer is positioned on a substrate, and the gate insulating film is positioned on the active layer. The gate electrode is positioned on the gate insulating film, and the interlayer insulating film is positioned on the gate electrode. The source and drain electrodes are positioned on the interlayer insulating film and connected to the active layer. The intermediate layer is positioned between the active layer and the gate insulating film, and made of an oxide semiconductor comprising a Group IV element.