Patents by Inventor Taewon Jung

Taewon Jung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9143184
    Abstract: A multiport radio frequency (RF) switch circuit is disclosed. The switch circuit includes a first transistor that is connected to a first port, a common antenna port, and a first enable line. The first transistor is selectively activatable in response to a first enable signal applied to the first enable line. There is also a second transistor connected to a second port, the common antenna port, and a second enable line. The second transistor is selectively activatable in response to a second enable signal applied to the second enable line. A first inductor connected to the first port and the second port compensates for parasitic capacitance between the first port and the second port from an inactive one of the transistors.
    Type: Grant
    Filed: October 14, 2011
    Date of Patent: September 22, 2015
    Assignee: RFAXIS, INC.
    Inventors: Oleksandr Gorbachov, Okjune Jeon, Taewon Jung
  • Publication number: 20120262217
    Abstract: A multiport radio frequency (RF) switch circuit is disclosed. The switch circuit includes a first transistor that is connected to a first port, a common antenna port, and a first enable line. The first transistor is selectively activatable in response to a first enable signal applied to the first enable line. There is also a second transistor connected to a second port, the common antenna port, and a second enable line. The second transistor is selectively activatable in response to a second enable signal applied to the second enable line. A first inductor connected to the first port and the second port compensates for parasitic capacitance between the first port and the second port from an inactive one of the transistors.
    Type: Application
    Filed: October 14, 2011
    Publication date: October 18, 2012
    Applicant: RFAXIS, INC.
    Inventors: OLEKSANDR GORBACHOV, OKJUNE JEON, TAEWON JUNG
  • Patent number: 6683896
    Abstract: A drive circuitry that drives a vertical cavity surface emitting laser is provided. The drive circuitry includes a modulator, a negative peak timer and a limiter. The negative peak timer causes the modulator to rapidly decrease the magnitude of the output signal of the modulator to dissipate charge stored on the laser. Thus, the vertical cavity surface emitting laser quickly turns off.
    Type: Grant
    Filed: March 12, 2002
    Date of Patent: January 27, 2004
    Assignee: Vitesse Semiconductor Corporation
    Inventors: Randy T. Heilman, Taewon Jung, Raymond B. Patterson, III
  • Publication number: 20020094000
    Abstract: A drive circuitry that drives a vertical cavity surface emitting laser is provided. The drive circuitry includes a modulator, a negative peak timer and a limiter. The negative peak timer causes the modulator to rapidly decrease the magnitude of the output signal of the modulator to dissipate charge stored on the laser. Thus, the vertical cavity surface emitting laser quickly turns off.
    Type: Application
    Filed: March 12, 2002
    Publication date: July 18, 2002
    Inventors: Randy T. Heilman, Taewon Jung, Raymond B. Patterson
  • Publication number: 20020085600
    Abstract: A drive circuitry that drives a number of vertical cavity surface emitting lasers having a common cathode. The drive circuitry includes a modulator and a dummy laser. The modulator controls the vertical cavity surface emitting lasers. A summed modulation and bias current is directed to one of the vertical cavity surface emitting lasers to turn on the laser. The modulation current is pulled away from the vertical cavity surface emitting laser to turn off the laser.
    Type: Application
    Filed: February 20, 2002
    Publication date: July 4, 2002
    Inventor: Taewon Jung
  • Patent number: 6114896
    Abstract: A complementary multiplexer with low disabled output capacitance and method in which a plurality of switched buffers are packaged together to avoid the capacitance of a plurality of switched buffers applied to the printed-circuit board transmission lines.
    Type: Grant
    Filed: February 10, 1999
    Date of Patent: September 5, 2000
    Assignee: Intersil Corporation
    Inventor: Taewon Jung
  • Patent number: 5923207
    Abstract: A complementary multiplexer with low disabled output capacitance and method in which a plurality of switched buffers are packaged together to avoid the capacitance of a plurality of switched buffers applied to the printed-circuit board transmission lines.
    Type: Grant
    Filed: December 30, 1996
    Date of Patent: July 13, 1999
    Assignee: Harris Corporation
    Inventor: Taewon Jung
  • Patent number: 5892264
    Abstract: A fabrication process for dielectrically isolated high frequency complementary analog bipolar and CMOS transistors. Polysilicon extrinsic bases, polysilicon emitters with sidewall spacers formed after intrinsic base formation provides high current gain, large emitter-to-base breakdown voltage, large Early voltage, and high cutoff frequency.
    Type: Grant
    Filed: January 21, 1997
    Date of Patent: April 6, 1999
    Assignee: Harris Corporation
    Inventors: Christopher K. Davis, George Bajor, James D. Beasom, Thomas L. Crandell, Taewon Jung, Anthony L. Rivoli
  • Patent number: 5807780
    Abstract: A fabrication process for dielectrically isolated high frequency complementary analog bipolar and CMOS transistors. Polysilicon extrinsic bases, polysilicon emitters with sidewall spacers formed after intrinsic base formation provides high current gain, large emitter-to-base breakdown voltage, large Early voltage, and high cutoff frequency.
    Type: Grant
    Filed: June 5, 1995
    Date of Patent: September 15, 1998
    Assignee: Harris Corporation
    Inventors: Christopher K. Davis, George Bajor, James D. Beasom, Thomas L. Crandell, Taewon Jung, Anthony L. Rivoli
  • Patent number: 5668397
    Abstract: A fabrication process for dielectrically isolated high frequency complementary analog bipolar and CMOS transistors. Polysilicon extrinsic bases, polysilicon emitters with sidewall spacers formed after intrinsic base formation provides high current gain, large emitter-to-base breakdown voltage, large Early voltage, and high cutoff frequency.
    Type: Grant
    Filed: October 4, 1993
    Date of Patent: September 16, 1997
    Assignee: Harris Corp.
    Inventors: Christopher K. Davis, George Bajor, James D. Beasom, Thomas L. Crandell, Taewon Jung, Anthony L. Rivoli