Abstract: An electronic device including a foldable housing including a first housing, a second housing, and a connection structure; a flexible display; a first plate including at least a portion disposed on a lower end of a first area of the display and a first periphery; a second plate including at least a portion disposed on a lower end of a second area of the display, and a second periphery; and a protection layer. When the electronic device is in an unfolded state, the first periphery and the second periphery are configured to be in contact with the display. When the electronic device pivots from the unfolded state to a folded state, the first periphery and the second periphery are configured to be spaced apart from the display, and the protection layer is configured to cover an area of the display exposed between the first periphery and the second periphery.

Abstract: Radio frequency (RF) power amplifier architectures and circuits providing compensated current and gain from turn-on to end of long signal burst intervals to counteract amplifier transistor thermal rise due to self-heating at turn-on. The RF receiver circuit may be implemented as one of a single chip device or as part of an integrated system of components for use in mobile communication systems.

Abstract: A multiport radio frequency (RF) switch circuit is disclosed. The switch circuit includes a first transistor that is connected to a first port, a common antenna port, and a first enable line. The first transistor is selectively activatable in response to a first enable signal applied to the first enable line. There is also a second transistor connected to a second port, the common antenna port, and a second enable line. The second transistor is selectively activatable in response to a second enable signal applied to the second enable line. A first inductor connected to the first port and the second port compensates for parasitic capacitance between the first port and the second port from an inactive one of the transistors.

Abstract: A multiport radio frequency (RF) switch circuit is disclosed. The switch circuit includes a first transistor that is connected to a first port, a common antenna port, and a first enable line. The first transistor is selectively activatable in response to a first enable signal applied to the first enable line. There is also a second transistor connected to a second port, the common antenna port, and a second enable line. The second transistor is selectively activatable in response to a second enable signal applied to the second enable line. A first inductor connected to the first port and the second port compensates for parasitic capacitance between the first port and the second port from an inactive one of the transistors.

Abstract: A drive circuitry that drives a vertical cavity surface emitting laser is provided. The drive circuitry includes a modulator, a negative peak timer and a limiter. The negative peak timer causes the modulator to rapidly decrease the magnitude of the output signal of the modulator to dissipate charge stored on the laser. Thus, the vertical cavity surface emitting laser quickly turns off.

Abstract: A drive circuitry that drives a vertical cavity surface emitting laser is provided. The drive circuitry includes a modulator, a negative peak timer and a limiter. The negative peak timer causes the modulator to rapidly decrease the magnitude of the output signal of the modulator to dissipate charge stored on the laser. Thus, the vertical cavity surface emitting laser quickly turns off.

Abstract: A drive circuitry that drives a number of vertical cavity surface emitting lasers having a common cathode. The drive circuitry includes a modulator and a dummy laser. The modulator controls the vertical cavity surface emitting lasers. A summed modulation and bias current is directed to one of the vertical cavity surface emitting lasers to turn on the laser. The modulation current is pulled away from the vertical cavity surface emitting laser to turn off the laser.

Abstract: A complementary multiplexer with low disabled output capacitance and method in which a plurality of switched buffers are packaged together to avoid the capacitance of a plurality of switched buffers applied to the printed-circuit board transmission lines.

Abstract: A complementary multiplexer with low disabled output capacitance and method in which a plurality of switched buffers are packaged together to avoid the capacitance of a plurality of switched buffers applied to the printed-circuit board transmission lines.

Abstract: A fabrication process for dielectrically isolated high frequency complementary analog bipolar and CMOS transistors. Polysilicon extrinsic bases, polysilicon emitters with sidewall spacers formed after intrinsic base formation provides high current gain, large emitter-to-base breakdown voltage, large Early voltage, and high cutoff frequency.

Abstract: A fabrication process for dielectrically isolated high frequency complementary analog bipolar and CMOS transistors. Polysilicon extrinsic bases, polysilicon emitters with sidewall spacers formed after intrinsic base formation provides high current gain, large emitter-to-base breakdown voltage, large Early voltage, and high cutoff frequency.

Abstract: A fabrication process for dielectrically isolated high frequency complementary analog bipolar and CMOS transistors. Polysilicon extrinsic bases, polysilicon emitters with sidewall spacers formed after intrinsic base formation provides high current gain, large emitter-to-base breakdown voltage, large Early voltage, and high cutoff frequency.