Abstract: Disclosed are a backside illuminated image sensor and a method of manufacturing the same. More particularly, a backside illuminated image sensor and a method of manufacturing the backside illuminated image sensor include a light scattering portion in a substrate configured to converge a path of incident light to a photoelectric conversion structure, thereby preventing cross-talk between adjacent pixels and increasing light sensitivity.

Abstract: A display device includes a substrate including a sub-display area including a transmission area and a main display area adjacent to the sub-display area, a thin film transistor layer disposed on the main display area and the sub-display area, a light emitting element layer disposed on the thin film transistor layer, a thin film encapsulation layer disposed on the light emitting element layer, where first and second through holes are defined through the transmission area to overlap each other, a first planarization layer disposed under the substrate in the main display area and the transmission area to fill the second through hole, and a second planarization layer disposed on the thin film encapsulation layer in the main display area and the transmission area to fill the first through hole. In the transmission area, the first planarization layer and the second planarization layer are in contact with each other.

Abstract: A display device includes a substrate; an auxiliary electrode including metal layers stacked in an undercut structure; and a light-emitting element layer. The light-emitting element layer includes a second common layer; and a common electrode which extend to the non-emission area. A side surface of the auxiliary electrode includes a first bonding portion in contact with the second common layer, and a second bonding portion in contact with the common electrode. The auxiliary electrode includes a first side and a second side facing each other in one direction, and a third side and a fourth side facing each other in other direction crossing the one direction. The first bonding portion has a first width at a first point of the first side and has a second width smaller than the first width at a second point of the third side.

Abstract: A display device includes a light-emitting device disposed on a substrate and including an emission layer, and a light controller disposed on the light-emitting device. The light controller includes a plurality of main light blocking patterns extending in a first direction and spaced apart from each other in a second direction intersecting the first direction, and a plurality of sub-light blocking patterns disposed between adjacent ones of the plurality of main light blocking patterns, extending in the first direction, and spaced apart from each other in the second direction. Each of the plurality of main light blocking patterns has a first thickness in a thickness direction of the substrate, and each of the plurality of sub-light blocking patterns has a second thickness that is less than the first thickness in the thickness direction of the substrate.

Abstract: A display device includes: a first pixel electrode disposed in a first emission area, on a substrate; an insulating layer covering edges of the first pixel electrode; a first light-emitting layer disposed on the first pixel electrode and the insulating layer; a first common electrode disposed on the first light-emitting layer; banks disposed on the insulating layer and surrounding the first emission area; and a first organic pattern surrounding the first emission area, disposed on the banks, and including the same material as the first light-emitting layer. Side surfaces of each of the banks are spaced apart from side surfaces of the insulating layer.

Abstract: Disclosed are a backside illuminated image sensor and a method of manufacturing the same. More particularly, a backside illuminated image sensor and a method of manufacturing the backside illuminated image sensor include a plurality of sequential layers have different refractive indexes to extend a path of incident light passing through a lens, thereby increasing sensitivity.

Abstract: Disclosed is an interface system including a first neuron cluster that outputs a first neuron signal including a first neuron request and first neuron data by performing a first arithmetic operation, and a first interface circuit that stores the first neuron data and outputs a first response, in response to the first neuron request. The first neuron cluster outputs a second neuron signal including a second neuron request and second neuron data by performing a second arithmetic operation, in response to the first response. Before the first data is transmitted to a second neuron cluster different from the first neuron cluster, the first interface circuit outputs the first response in response to a fact that the first neuron data is stored.

Abstract: Disclosed are a fingerprint forgery detection device and a method of operating the same. The fingerprint forgery detection device includes a memory that stores a first feature signal including biological channel feature information of a user, a transmitter including at least one transmission electrode for transmitting a pulse signal to the user, a receiver including at least one reception electrode for receiving a biological channel response signal in response to the transmitted pulse signal, and a signal processor for processing the biological channel response signal to detect whether a fingerprint is forged, and at least one processor that controls the memory, the transmitter, and the receiver.

Abstract: A light emitting display device includes: a light emitting element; a second transistor connected to a scan line; a first transistor which applies a current to the light emitting element; a capacitor connected to a gate electrode of the first transistor; and a third transistor connected to an output electrode of the first transistor and the gate electrode of the first transistor. Channels of the second transistor, the first transistor, and the third transistor are disposed in a polycrystalline semiconductor layer, and a width of a channel of the third transistor is in a range of about 1 ?m to about 2 ?m, and a length of the channel of the third transistor is in a range of about 1 ?m to about 2.5 ?m.

Abstract: Disclosed is an amplification circuit, which includes a first amplifier that receives an external signal and performs first band pass filtering on the external signal to output a first filter signal, and a second amplifier that receives the first filter signal and performs second band pass filtering on the first filter signal to output a second filter signal, and a frequency pass bandwidth of the second band pass filtering is narrower than a frequency pass bandwidth of the first band pass filtering.

Abstract: A hybrid communication device, an operation method thereof, and a communication system including the same are provided. The hybrid communication device includes a contact unit that includes an antenna for receiving a first communication signal and an electrode for receiving a second signal, a switch controller that includes a first switch and a second switch and controls the first switch and the second switch based on a change in capacitance of the electrode, and a signal processing unit that receives at least one of the first communication signal and the second communication signal from the contact unit via the first switch and processes the received signal. The first switch is connected to the contact unit, and the signal processing unit is connected to the first switch.

Abstract: A display device is provided. A display device includes a non-display area where no image is displayed, and a display area where images are displayed, and including a first area and a second area having different light transmittances, and a first pixel and a second pixel, wherein a transistor and an anode electrode of the first pixel are in the first area, wherein an anode electrode of the second pixel is in the second area, and a transistor of the second pixel is outside the second area, wherein the anode electrode and the transistor of the second pixel are electrically connected by a connection line, and wherein at least a part of the connection line is in at least one of the first area and the second area, and is covered by an anti-reflection layer.

Abstract: A counterattack method against a hacked node in a controller area network (CAN) bus physical layer includes: setting node IDs (NIDs), which are different unique IDs, for each of a plurality of nodes connected to a CAN bus line; determining that an error frame is generated when at least one of a node using a forged NID, a node using a different NID, and a node using a non-existent NID is found; increasing counts of a transmit error counter (TEC) and a receive error counter (REC) of a transmitting node and a receiving node whenever the error frame is generated; and allowing a node of which the count of the TEC or REC is greater than a set threshold value to enter a bus-off state to block the node.

Abstract: A display device includes: a substrate; a semiconductor on the substrate; a first gate insulating layer on the semiconductor; a gate electrode on the first gate insulating layer, and overlapping with the semiconductor; a signal line spaced from the gate electrode; a sacrificial layer on the signal line, and including an amorphous silicon material; an interlayer insulating layer on the gate electrode and the sacrificial layer; a source electrode on the interlayer insulating layer, and connected to a first region of the semiconductor; a drain electrode on the interlayer insulating layer, and connected to a second region of the semiconductor; and a connecting member on the interlayer insulating layer, and connected to the signal line.

Abstract: A light emitting display device includes: a light emitting element; a second transistor connected to a scan line; a first transistor which applies a current to the light emitting element; a capacitor connected to a gate electrode of the first transistor; and a third transistor connected to an output electrode of the first transistor and the gate electrode of the first transistor. Channels of the second transistor, the first transistor, and the third transistor are disposed in a polycrystalline semiconductor layer, and a width of a channel of the third transistor is in a range of about 1 ?m to about 2 ?m, and a length of the channel of the third transistor is in a range of about 1 ?m to about 2.5 ?m.

Abstract: A display device includes: a substrate; first banks spaced apart from each other on the substrate; a first electrode and a second electrode covering the first banks and spaced apart from each other; a light-emitting element between the first electrode and the second electrode; a first contact electrode connected to the first electrode and contacting one end of the light-emitting element; and a second contact electrode connected to the second electrode and contacting another end of the light-emitting element. The first contact electrode includes a first material, the second contact electrode includes a second material, and physical properties of the first material and the second material are different from each other.

Abstract: A display device includes: a flexible display panel having a display area and a non-display area disposed adjacent to the display area; a supporting member provided at a predetermined area of the flexible display panel adjacent to one side of the flexible display panel, wherein the non-display area of the flexible display panel contacts the supporting member and surrounds the supporting member while being bent at a bend angle, and the bend angle of the non-display area is variously adjusted by the supporting member.

Abstract: A display device includes: a plurality of pixels on a substrate, each of the plurality of pixels including a light emitting element and a pixel circuit configured to drive the light emitting element, wherein the pixel circuit of each of the plurality of pixels comprises: a first-first transistor configured to control a driving current flowing through the light emitting element based on a voltage of a first node; a first-second transistor connected in series with the first-first transistor and configured to control the driving current based on a voltage of a second node; a second transistor configured to selectively supply a data voltage to a third node which is a first electrode of the first-first transistor; a third-first transistor connected between the first node and a fourth node which is a second electrode of the first-second transistor; and a third-second transistor connected between the second node and the fourth node.

Abstract: Disclosed is a neuron circuit, which includes a first bias circuit that adds a bias current to an input current to generate a biased input current, a logarithm-based neuron calculation circuit that performs a logarithm calculation on an amount of current of the biased input current to generate an input logarithm value and generates a biased output voltage by performing a logarithm-based Hodgkin-Huxley model calculation based on the input logarithm value, and a second bias circuit that adds a bias voltage to the biased output voltage to generate an output voltage.

Abstract: A display device includes a display area and a pad area on a side of the display area, a plurality of conductive layers on a first substrate in the display area and the pad area and comprising a wiring and a conductive pattern, a via layer on the plurality of conductive layers, a plurality of electrodes on the via layer in the display area and spaced apart from each other, and a light emitting element on at least one of the plurality of electrodes. At least one of the conductive layers includes a first metal layer, a second metal layer on the first metal layer, and a third metal layer on the second metal layer. The second metal layer includes copper (Cu), the third metal layer includes a copper alloy, and a grain size of the third metal layer is smaller than a grain size of the second metal layer.