Patents by Inventor Tae-yeon Shin

Tae-yeon Shin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240137568
    Abstract: Disclosed is a method and apparatus for encoding/decoding a video. According to an embodiment, provided is a method of setting a level for each of one or more regions, including decoding a definition syntax element related to level definition and a designation syntax element related to target designation from a bitstream; defining one or more levels based on the definition syntax element; and setting a target level designated by the designation syntax element among the defined levels for a target region designated by the designation syntax element.
    Type: Application
    Filed: January 2, 2024
    Publication date: April 25, 2024
    Inventors: Jeong-yeon LIM, Jae Seob SHIN, Sun Young LEE, Se Hoon SON, Tae Young NA, Jae Il KIM
  • Patent number: 11967567
    Abstract: A semiconductor device with EMI shield and a fabricating method thereof are provided. In one embodiment, the semiconductor device includes EMI shield on all six surfaces of the semiconductor device without the use of a discrete EMI lid.
    Type: Grant
    Filed: April 24, 2023
    Date of Patent: April 23, 2024
    Assignee: AMKOR TECHNOLOGY SINGAPORE HOLDING PTE. LTD.
    Inventors: Doo Soub Shin, Tae Yong Lee, Kyoung Yeon Lee, Sung Gyu Kim
  • Patent number: 11924473
    Abstract: Disclosed herein is a method for decoding a video including determining a coding unit to be decoded by block partitioning, decoding prediction syntaxes for the coding unit, the prediction syntaxes including a skip flag indicating whether the coding unit is encoded in a skip mode, after the decoding of the prediction syntaxes, decoding transform syntaxes including a transformation/quantization skip flag and a coding unit cbf, wherein the transformation/quantization skip flag indicates whether inverse transformation, inverse quantization, and at least part of in-loop filterings are skipped, and the coding unit cbf indicates whether all coefficients in a luma block and two chroma blocks constituting the coding unit are zero, and reconstructing the coding unit based on the prediction syntaxes and the transform syntaxes.
    Type: Grant
    Filed: June 2, 2022
    Date of Patent: March 5, 2024
    Assignee: SK TELECOM CO., LTD.
    Inventors: Sun Young Lee, Jeong-yeon Lim, Tae Young Na, Gyeong-taek Lee, Jae-seob Shin, Se Hoon Son, Hyo Song Kim
  • Publication number: 20130068721
    Abstract: An electrode for a super-capacitor, a super-capacitor including the electrode, and a method of preparing the electrode in which the electrode includes a conductive substrate; metal nano structures formed on the conductive substrate; and a metal oxide coated on the metal nano structures. The electrode for the super-capacitor increases the capacitance of the super-capacitor.
    Type: Application
    Filed: November 16, 2012
    Publication date: March 21, 2013
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jin-hwan PARK, Sung-ho PARK, Tae-yeon SHIN
  • Patent number: 8339768
    Abstract: An electrode for a super-capacitor, a super-capacitor including the electrode, and a method of preparing the electrode in which the electrode includes a conductive substrate; metal nano structures formed on the conductive substrate; and a metal oxide coated on the metal nano structures. The electrode for the super-capacitor increases the capacitance of the super-capacitor.
    Type: Grant
    Filed: February 19, 2010
    Date of Patent: December 25, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jin-hwan Park, Sung-ho Park, Tae-yeon Shin
  • Publication number: 20100238607
    Abstract: An electrode for a super-capacitor, a super-capacitor including the electrode, and a method of preparing the electrode in which the electrode includes a conductive substrate; metal nano structures formed on the conductive substrate; and a metal oxide coated on the metal nano structures. The electrode for the super-capacitor increases the capacitance of the super-capacitor.
    Type: Application
    Filed: February 19, 2010
    Publication date: September 23, 2010
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Jin-hwan Park, Sung-ho Park, Tae-yeon Shin